LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
Titel:
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
Auteur:
di Forte Poisson, M.-A. Magis, M. Tordjman, M. Aubry, R. Sarazin, N. Peschang, M. Morvan, E. Delage, S.L. di Persio, J. Quéré, R. Grimbert, B. Hoel, V. Delos, E. Ducatteau, D. Gaquiere, C.