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                             137 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A combined fluid dynamic and 3D kinetic Monte Carlo investigation of the selective deposition of GaAs and InP Rondanini, Maurizio
 2004
 272 1-4 p. 52-58
7 p.
 artikel
2 AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Florescu, D.I.
 2004
 272 1-4 p. 449-454
6 p.
 artikel
3 Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths Kaiander, I.N.
 2004
 272 1-4 p. 154-160
7 p.
 artikel
4 Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study Kondratyev, A.V.
 2004
 272 1-4 p. 420-425
6 p.
 artikel
5 An RDS, LEED, and STM Study of MOCVD-Prepared Si(100) surfaces Hannappel, T.
 2004
 272 1-4 p. 24-29
6 p.
 artikel
6 Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy Kimura, Akitaka
 2004
 272 1-4 p. 432-437
6 p.
 artikel
7 Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition Fujita, Shizuo
 2004
 272 1-4 p. 138-142
5 p.
 artikel
8 As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor Park, Eun-Hyun
 2004
 272 1-4 p. 426-431
6 p.
 artikel
9 Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor Chalker, Paul R.
 2004
 272 1-4 p. 778-784
7 p.
 artikel
10 Author Index 2004
 272 1-4 p. 844-855
12 p.
 artikel
11 Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates Motohisa, J.
 2004
 272 1-4 p. 180-185
6 p.
 artikel
12 C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE Oda, Yasuhiro
 2004
 272 1-4 p. 700-705
6 p.
 artikel
13 Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE Perez-Solorzano, V.
 2004
 272 1-4 p. 386-392
7 p.
 artikel
14 Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime Yeh, Jeng-Ya
 2004
 272 1-4 p. 719-725
7 p.
 artikel
15 Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si Ishikawa, Hiroyasu
 2004
 272 1-4 p. 322-326
5 p.
 artikel
16 Characterization of GaN grown on patterned Si(111) substrates Wang, D.
 2004
 272 1-4 p. 489-495
7 p.
 artikel
17 Chemical kinetics and design of gas inlets for III–V growth by MOVPE in a quartz showerhead reactor Li, Zhi-qiang
 2004
 272 1-4 p. 47-51
5 p.
 artikel
18 Comparison of dilute nitride growth on a single- and 8×4-inch multiwafer MOVPE system for solar cell applications Dimroth, F.
 2004
 272 1-4 p. 726-731
6 p.
 artikel
19 Considerable improvement of optical property of GaInNAs/GaAs quantum well Ishizuka, Takashi
 2004
 272 1-4 p. 760-764
5 p.
 artikel
20 Contents ICMOVPE-12 2004
 272 1-4 p. vii-xvi
nvt p.
 artikel
21 Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth Elarde, V.C.
 2004
 272 1-4 p. 148-153
6 p.
 artikel
22 Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Green, D.S.
 2004
 272 1-4 p. 285-292
8 p.
 artikel
23 Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine Shenai, Deodatta V.
 2004
 272 1-4 p. 603-608
6 p.
 artikel
24 Defect study of MOVPE-grown InGaP layers on GaAs Knauer, A.
 2004
 272 1-4 p. 627-632
6 p.
 artikel
25 Developments in abatement technology for MOCVD processing Sweeney, Joseph
 2004
 272 1-4 p. 836-843
8 p.
 artikel
26 Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy Qi, Y.D.
 2004
 272 1-4 p. 333-340
8 p.
 artikel
27 Editorial Board 2004
 272 1-4 p. ii-
1 p.
 artikel
28 Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy Wang, C.A.
 2004
 272 1-4 p. 711-718
8 p.
 artikel
29 Effects of Gas switching sequences on GaAs/GaAs1− y Sb y superlattices Hawkins, B.E.
 2004
 272 1-4 p. 686-693
8 p.
 artikel
30 Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system Tokunaga, H.
 2004
 272 1-4 p. 348-352
5 p.
 artikel
31 Efficient removal of UDMH from dilute nitride MOCVD exhaust streams Pahle, Jörg
 2004
 272 1-4 p. 810-815
6 p.
 artikel
32 Environmental considerations in the MOVPE growth of (Hg,Cd)Te Porter, Keith A.
 2004
 272 1-4 p. 829-835
7 p.
 artikel
33 Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors Shenai-Khatkhate, Deodatta V.
 2004
 272 1-4 p. 816-821
6 p.
 artikel
34 Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE Takeda, Junichiro
 2004
 272 1-4 p. 570-575
6 p.
 artikel
35 Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy Nitta, Shugo
 2004
 272 1-4 p. 438-443
6 p.
 artikel
36 Formation of high-density GaN self-assembled quantum dots by MOCVD Hoshino, K.
 2004
 272 1-4 p. 161-166
6 p.
 artikel
37 GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy Feng, Z.H.
 2004
 272 1-4 p. 327-332
6 p.
 artikel
38 GaN heteroepitaxy on Si(001) Schulze, F.
 2004
 272 1-4 p. 496-499
4 p.
 artikel
39 Growth and characterization of AlInN on AlN template Fujimori, Takao
 2004
 272 1-4 p. 381-385
5 p.
 artikel
40 Growth and characterization of GaN-based structures on SiCOI-engineered substrates Dikme, Y.
 2004
 272 1-4 p. 500-505
6 p.
 artikel
41 Growth and characterization of InAlP/InGaAs double barrier RTDs Neumann, S.
 2004
 272 1-4 p. 555-558
4 p.
 artikel
42 Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3 Uchida, Kazuo
 2004
 272 1-4 p. 658-663
6 p.
 artikel
43 Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys Allerman, A.A.
 2004
 272 1-4 p. 227-241
15 p.
 artikel
44 Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Kaeding, John F.
 2004
 272 1-4 p. 257-263
7 p.
 artikel
45 Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design Matsumoto, Koh
 2004
 272 1-4 p. 360-369
10 p.
 artikel
46 Growth mechanisms for GaAs nanowires grown in CBE Persson, A.I.
 2004
 272 1-4 p. 167-174
8 p.
 artikel
47 Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy Brunner, F.
 2004
 272 1-4 p. 111-117
7 p.
 artikel
48 Growth of Al x Ga1− x N-layers on planar and patterned substrates Rossow, U.
 2004
 272 1-4 p. 506-514
9 p.
 artikel
49 Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates Fujito, Kenji
 2004
 272 1-4 p. 370-376
7 p.
 artikel
50 Growth of GaP nanotree structures by sequential seeding of 1D nanowires Dick, Kimberly A.
 2004
 272 1-4 p. 131-137
7 p.
 artikel
51 Growth of one-dimensional nanostructures in MOVPE Seifert, Werner
 2004
 272 1-4 p. 211-220
10 p.
 artikel
52 Growth of self-assembled Al x In y Ga 1 - x - y N quantum dots by MOVPE Pérez-Solórzano, V.
 2004
 272 1-4 p. 186-191
6 p.
 artikel
53 Growth of ZnO films by MOVPE using diisopropylzinc and alcohols Fujita, Yasuhisa
 2004
 272 1-4 p. 795-799
5 p.
 artikel
54 Heteroepitaxy and nitrogen doping of high-quality ZnO Dadgar, A.
 2004
 272 1-4 p. 800-804
5 p.
 artikel
55 High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP Skogen, Erik J.
 2004
 272 1-4 p. 564-569
6 p.
 artikel
56 High efficiency GaN-based LEDs and lasers on SiC Edmond, John
 2004
 272 1-4 p. 242-250
9 p.
 artikel
57 High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers Kuan, T.M.
 2004
 272 1-4 p. 300-304
5 p.
 artikel
58 High-power laser structures grown on bulk GaN crystals Prystawko, Pawel
 2004
 272 1-4 p. 274-277
4 p.
 artikel
59 High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE Kawashima, Takeshi
 2004
 272 1-4 p. 377-380
4 p.
 artikel
60 High uniformity of InGaAsP layers grown by multi-wafer MOVPE system Shimizu, Eiichi
 2004
 272 1-4 p. 596-602
7 p.
 artikel
61 Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111) Fehse, K.
 2004
 272 1-4 p. 251-256
6 p.
 artikel
62 Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain Kim, Ki-Sung
 2004
 272 1-4 p. 748-752
5 p.
 artikel
63 Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Nguyen, D.
 2004
 272 1-4 p. 59-64
6 p.
 artikel
64 InAs quantum dots over InGaAs for infrared photodetectors Pires, M.P.
 2004
 272 1-4 p. 192-197
6 p.
 artikel
65 Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC Boeykens, S.
 2004
 272 1-4 p. 312-317
6 p.
 artikel
66 Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE Kangawa, Yoshihiro
 2004
 272 1-4 p. 444-448
5 p.
 artikel
67 Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers Strittmatter, A.
 2004
 272 1-4 p. 415-419
5 p.
 artikel
68 InN growth and annealing investigations using in-situ spectroscopic ellipsometry Drago, M.
 2004
 272 1-4 p. 87-93
7 p.
 artikel
69 In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy Tsuchiya, T.
 2004
 272 1-4 p. 125-130
6 p.
 artikel
70 In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature Dadgar, A.
 2004
 272 1-4 p. 72-75
4 p.
 artikel
71 In situ metrology advances in MOCVD growth of GaN-based materials Belousov, M.
 2004
 272 1-4 p. 94-99
6 p.
 artikel
72 In situ optical analysis of low temperature MOCVD GaN nucleation layer formation via multiple wavelength ellipsometry Schmidegg, Klaus
 2004
 272 1-4 p. 106-110
5 p.
 artikel
73 In situ stress measurements during MOCVD growth of AlGaN on SiC Acord, Jeremy D.
 2004
 272 1-4 p. 65-71
7 p.
 artikel
74 Instructions to Authors 2004
 272 1-4 p. I-II
nvt p.
 artikel
75 Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications Bugge, F.
 2004
 272 1-4 p. 531-537
7 p.
 artikel
76 Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17μm) Gottschalch, V.
 2004
 272 1-4 p. 642-649
8 p.
 artikel
77 Introduction Biefeld, R.M.
 2004
 272 1-4 p. 1-
1 p.
 artikel
78 Investigation of optical and electrical properties of Mg-doped p-In x Ga1− x N, p-GaN and p-Al y Ga1− y N grown by MOCVD Lee, Sung-Nam
 2004
 272 1-4 p. 455-459
5 p.
 artikel
79 Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE Iida, Kazuyoshi
 2004
 272 1-4 p. 270-273
4 p.
 artikel
80 LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices di Forte Poisson, M.-A.
 2004
 272 1-4 p. 305-311
7 p.
 artikel
81 Marker layers for the development of a multistep GaN FACELO process Habel, Frank
 2004
 272 1-4 p. 515-519
5 p.
 artikel
82 Material properties of graded composition In x Ga1− x P buffer layers grown on GaP by organometallic vapor phase epitaxy Hasenöhrl, S.
 2004
 272 1-4 p. 633-641
9 p.
 artikel
83 Measurement of vapour pressure of In-based metalorganics for MOVPE Fulem, M.
 2004
 272 1-4 p. 42-46
5 p.
 artikel
84 Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers Bour, D.
 2004
 272 1-4 p. 526-530
5 p.
 artikel
85 Microscopic spatial distribution of bound excitons in high-quality ZnO Bertram, F.
 2004
 272 1-4 p. 785-788
4 p.
 artikel
86 MOCVD-grown InGaN-channel HEMT structures with electron mobility of over 1000 cm 2 / V s Okamoto, Naoya
 2004
 272 1-4 p. 278-284
7 p.
 artikel
87 MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27μm emission Kuo, H.C.
 2004
 272 1-4 p. 538-542
5 p.
 artikel
88 MOCVD growth of monomethylhydrazine-doped ZnO layers Saito, Koki
 2004
 272 1-4 p. 805-809
5 p.
 artikel
89 Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs Chowdhury, Uttiya
 2004
 272 1-4 p. 318-321
4 p.
 artikel
90 MOVPE GaN growth: determination of activation energy using in-situ reflectometry Kaluza, N.
 2004
 272 1-4 p. 100-105
6 p.
 artikel
91 MOVPE-grown quantum cascade lasers operating at ∼9μm wavelength Krysa, A.B.
 2004
 272 1-4 p. 682-685
4 p.
 artikel
92 MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates Miyoshi, Makoto
 2004
 272 1-4 p. 293-299
7 p.
 artikel
93 MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system Kunert, Bernardette
 2004
 272 1-4 p. 753-759
7 p.
 artikel
94 MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3μm low-threshold lasers Decobert, J.
 2004
 272 1-4 p. 543-548
6 p.
 artikel
95 MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP El-Zein, N.
 2004
 272 1-4 p. 609-614
6 p.
 artikel
96 MOVPE process for horizontal reactors with reduced parasitic deposition Hardtdegen, H.
 2004
 272 1-4 p. 407-414
8 p.
 artikel
97 MOVPE selectively grown GaAs nano-wires with self-aligned W side gate Ooike, N.
 2004
 272 1-4 p. 175-179
5 p.
 artikel
98 1.5μm VCSEL structure optimization for high-power and high-temperature operation Mereuta, A.
 2004
 272 1-4 p. 520-525
6 p.
 artikel
99 Nitrogen–arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE Hoffmann, V.
 2004
 272 1-4 p. 30-36
7 p.
 artikel
100 Nucleation and growth of InN thin films using conventional and pulsed MOVPE Johnson, M.C.
 2004
 272 1-4 p. 400-406
7 p.
 artikel
101 Optical and structural studies of GaN 3D structures selectively grown by MOCVD Viste, P.
 2004
 272 1-4 p. 466-474
9 p.
 artikel
102 Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance Strittmatter, A.
 2004
 272 1-4 p. 76-80
5 p.
 artikel
103 Optimized 9×2-inch MOVPE reactor for the growth of Al-containing antimonides Dimroth, F.
 2004
 272 1-4 p. 706-710
5 p.
 artikel
104 Ordering structure along the [ 0 0 1 ] direction of InAlAs Kurihara, K.
 2004
 272 1-4 p. 9-14
6 p.
 artikel
105 Passivation of GaAs surface by ultrathin epitaxial GaN layer Riikonen, J.
 2004
 272 1-4 p. 621-626
6 p.
 artikel
106 Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates Cederberg, J.G.
 2004
 272 1-4 p. 588-595
8 p.
 artikel
107 Performance comparison between integrated 40 Gb/s EAM devices grown by selective area growth and butt-joint overgrowth Zhu, J.T.
 2004
 272 1-4 p. 576-581
6 p.
 artikel
108 Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy Lee, S.C.
 2004
 272 1-4 p. 2-8
7 p.
 artikel
109 Preparation and characterization of ultra-thin ferroelectric PZT films grown by plasma-assisted CVD Nishida, Ken
 2004
 272 1-4 p. 789-794
6 p.
 artikel
110 Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy Wang, C.A.
 2004
 272 1-4 p. 664-681
18 p.
 artikel
111 Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates Rudra, Alok
 2004
 272 1-4 p. 615-620
6 p.
 artikel
112 Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy Pohl, U.W.
 2004
 272 1-4 p. 143-147
5 p.
 artikel
113 Reconstructions of MOVPE-prepared group-V-rich GaAsSb(100) surfaces Kollonitsch, Z.
 2004
 272 1-4 p. 694-699
6 p.
 artikel
114 Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using Al x Ga 1 - x N/GaN superlattice underlayers Chichibu, S.F.
 2004
 272 1-4 p. 481-488
8 p.
 artikel
115 Red VCSEL for high-temperature applications Rossbach, R.
 2004
 272 1-4 p. 549-554
6 p.
 artikel
116 Routine growth of InP based device structures using process calibration with optical in-situ techniques Wolfram, P.
 2004
 272 1-4 p. 118-124
7 p.
 artikel
117 Safety benefits of using a sub-atmospheric pressure hydride gas source for MOCVD Raynor, Mark W.
 2004
 272 1-4 p. 822-828
7 p.
 artikel
118 Sapphire substrate misorientation effects on GaN nucleation layer properties Lu, D.
 2004
 272 1-4 p. 353-359
7 p.
 artikel
119 Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure Bondarev, V.Yu.
 2004
 272 1-4 p. 559-563
5 p.
 artikel
120 Selective growth of GaInN quantum dot structures Jetter, M.
 2004
 272 1-4 p. 204-210
7 p.
 artikel
121 Selective MOVPE growth of tilted arrayed waveguides from [011] direction Kawakita, Yasumasa
 2004
 272 1-4 p. 582-587
6 p.
 artikel
122 Self-assembled In(Ga) As islands on Ge substrate Knuuttila, L.
 2004
 272 1-4 p. 221-226
6 p.
 artikel
123 Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers Leibiger, G.
 2004
 272 1-4 p. 732-738
7 p.
 artikel
124 Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance Volz, Kerstin
 2004
 272 1-4 p. 739-747
9 p.
 artikel
125 Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN McAleese, C.
 2004
 272 1-4 p. 475-480
6 p.
 artikel
126 Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD Poochinda, Kunakorn
 2004
 272 1-4 p. 460-465
6 p.
 artikel
127 Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD Sacilotti, M.
 2004
 272 1-4 p. 198-203
6 p.
 artikel
128 Structure optimization of InGaN–GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism Kim, Tae Geun
 2004
 272 1-4 p. 264-269
6 p.
 artikel
129 Subject Index 2004
 272 1-4 p. 857-859
3 p.
 artikel
130 Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs-cluster hybrid layers by MOVPE Lampalzer, M.
 2004
 272 1-4 p. 772-777
6 p.
 artikel
131 Tellurium surfactant effects in the growth of lattice mismatched InAs x P1− x by metal organic vapor-phase epitaxy Newman, Frederick D.
 2004
 272 1-4 p. 650-657
8 p.
 artikel
132 Temperature dependence of the optical properties on GaInNP Hsu, S.H.
 2004
 272 1-4 p. 765-771
7 p.
 artikel
133 The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy Oliver, Rachel A.
 2004
 272 1-4 p. 393-399
7 p.
 artikel
134 Thermodynamic analysis of InN and In x Ga1− x N MOVPE using various nitrogen sources Kumagai, Yoshinao
 2004
 272 1-4 p. 341-347
7 p.
 artikel
135 The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method Nakano, Takayuki
 2004
 272 1-4 p. 15-23
9 p.
 artikel
136 Trimethylindium transport studies: the effect of different bubbler designs Smith, L.M.
 2004
 272 1-4 p. 37-41
5 p.
 artikel
137 Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE Steins, R.
 2004
 272 1-4 p. 81-86
6 p.
 artikel
                             137 gevonden resultaten
 
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