| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new light-intensity-dependent Brewster angle caused by programmed defects
|
Liao, Chungpin
|
|
2008
|
69 |
2-3 |
p. 759-763
5 p.
|
artikel
|
| 2 |
An investigation into the axial deformation of helical multi-shell gold nanowires
|
Ju, Shin-Pon
|
|
2008
|
69 |
2-3 |
p. 658-660
3 p.
|
artikel
|
| 3 |
Annealing of defect states in reactive ion etched GaN
|
Lan, Wen-How
|
|
2008
|
69 |
2-3 |
p. 719-723
5 p.
|
artikel
|
| 4 |
Annihilation of deep level defects in InP through high temperature annealing
|
Zhao, Y.W.
|
|
2008
|
69 |
2-3 |
p. 551-554
4 p.
|
artikel
|
| 5 |
A novel electrochromic device with high optical switching speed
|
Fang, Yean Kuen
|
|
2008
|
69 |
2-3 |
p. 734-737
4 p.
|
artikel
|
| 6 |
A novel method for preparing CuAlO2 thin films and the film properties
|
Shy, J.H.
|
|
2008
|
69 |
2-3 |
p. 547-550
4 p.
|
artikel
|
| 7 |
A novel process for forming an ultra-thin oxynitride film with high nitrogen topping
|
Lai, Chiung Hui
|
|
2008
|
69 |
2-3 |
p. 456-460
5 p.
|
artikel
|
| 8 |
A simple preparation technique of ZnO thin film with high crystallinity and UV luminescence intensity
|
Shao, Le-Xi
|
|
2008
|
69 |
2-3 |
p. 531-534
4 p.
|
artikel
|
| 9 |
A working single-level trap model and a resistivity scaling law for the proton-induced high-resistivity silicon
|
Liao, Chungpin
|
|
2008
|
69 |
2-3 |
p. 653-657
5 p.
|
artikel
|
| 10 |
BaMgAl10O17:Eu blue phosphors with MgO coating and microwave irradiation
|
Kuo, Kuan-Ting
|
|
2008
|
69 |
2-3 |
p. 446-450
5 p.
|
artikel
|
| 11 |
Bismuth telluride-based materials obtained by rapid quenching process
|
Reznichenko, M.F.
|
|
2008
|
69 |
2-3 |
p. 680-684
5 p.
|
artikel
|
| 12 |
Breakdown spots propagation in ultra-thin SiO2 films under repetitive ramped voltage stress using conductive atomic force microscopy
|
Wu, You-Lin
|
|
2008
|
69 |
2-3 |
p. 470-474
5 p.
|
artikel
|
| 13 |
Ceramic disc capacitor composed of Al2O3-doped BSTO for application in voltage-controlled oscillator
|
Chen, Yih-Chien
|
|
2008
|
69 |
2-3 |
p. 585-588
4 p.
|
artikel
|
| 14 |
Characteristics of III-nitride MSM photodiodes with SAQDs
|
Ji, Liang-Wen
|
|
2008
|
69 |
2-3 |
p. 724-726
3 p.
|
artikel
|
| 15 |
Characteristics of indium–tin oxide thin films grown on flexible plastic substrates at room temperature
|
Wang, L.M.
|
|
2008
|
69 |
2-3 |
p. 527-530
4 p.
|
artikel
|
| 16 |
Characteristics of nano zinc oxide synthesized under ultrasonic condition
|
Wei, Yu-Ling
|
|
2008
|
69 |
2-3 |
p. 688-692
5 p.
|
artikel
|
| 17 |
Characterization of polycrystalline CuInSe2 thin films deposited by sputtering and evaporation as a function of composition
|
Yang, L.-C.
|
|
2008
|
69 |
2-3 |
p. 435-440
6 p.
|
artikel
|
| 18 |
Chemical structure of photocatalytic active sites in nanosize TiO2
|
Hsiung, Tung Li
|
|
2008
|
69 |
2-3 |
p. 383-385
3 p.
|
artikel
|
| 19 |
Chemical vapor deposition and characterization of hafnium oxide films
|
Smirnova, T.P.
|
|
2008
|
69 |
2-3 |
p. 685-687
3 p.
|
artikel
|
| 20 |
Coherent terahertz-wave generation from semiconductors and its applications in biological sciences
|
Nishizawa, Jun-ichi
|
|
2008
|
69 |
2-3 |
p. 693-701
9 p.
|
artikel
|
| 21 |
Composition fluctuations and clustering in (Ga,In)(N,As)/GaAs(001) heterostructures studied by analytical transmission electron microscopy
|
Kong, X.
|
|
2008
|
69 |
2-3 |
p. 335-342
8 p.
|
artikel
|
| 22 |
Concentration anomalies of properties in Bi–Sb semimetallic solid solutions
|
Rogacheva, E.I.
|
|
2008
|
69 |
2-3 |
p. 580-584
5 p.
|
artikel
|
| 23 |
Controlling Ta phase in Ta/TaN bilayer by surface pre-treatment on TaN
|
Tsao, Jung-Chih
|
|
2008
|
69 |
2-3 |
p. 501-504
4 p.
|
artikel
|
| 24 |
Controlling the nitrogen composition of InGaAsN quantum wells grown by MOVPE
|
Chen, W.C.
|
|
2008
|
69 |
2-3 |
p. 404-407
4 p.
|
artikel
|
| 25 |
Copper concentration dependence of structure, morphology and optical properties of ZnS:Cu,Cl phosphor powder
|
Nien, Yung-Tang
|
|
2008
|
69 |
2-3 |
p. 366-371
6 p.
|
artikel
|
| 26 |
Copper voids improvement for the copper dual damascene interconnection process
|
Wang, T.C.
|
|
2008
|
69 |
2-3 |
p. 566-571
6 p.
|
artikel
|
| 27 |
Creation of resonance frequencies and enhancement of K by collective defect interactions and their novel applications
|
Liao, Chungpin
|
|
2008
|
69 |
2-3 |
p. 775-778
4 p.
|
artikel
|
| 28 |
Crystal growth study of CaGa2S4 Co-doped with Ce3+ and Na+
|
Oikawa, Shinya
|
|
2008
|
69 |
2-3 |
p. 400-403
4 p.
|
artikel
|
| 29 |
Crystallization and characterization of Pb2Nb2O7 thin films prepared at high pressure and low temperature
|
Wu, Chung-Han
|
|
2008
|
69 |
2-3 |
p. 475-479
5 p.
|
artikel
|
| 30 |
Czochralski growth and defect study of (La,Sr)(Al,Ta)O3 single crystals
|
Chou, Mitch M.C.
|
|
2008
|
69 |
2-3 |
p. 425-429
5 p.
|
artikel
|
| 31 |
Defect and interface studies of ZnO/Mg x Zn1− x O heterostructures
|
Vashaei, Z.
|
|
2008
|
69 |
2-3 |
p. 497-500
4 p.
|
artikel
|
| 32 |
Defect aspects in ultra-shallow GaAs sidewall tunnel junctions implemented with molecular layer epitaxy
|
Oyama, Yutaka
|
|
2008
|
69 |
2-3 |
p. 708-713
6 p.
|
artikel
|
| 33 |
Defect photoluminescence of ZnO nanorods synthesized by chemical methods
|
Leung, Yu Hang
|
|
2008
|
69 |
2-3 |
p. 353-357
5 p.
|
artikel
|
| 34 |
Distribution model of arsenic antisite defects in LTG:GaAs
|
Chen, Nien-Po
|
|
2008
|
69 |
2-3 |
p. 325-329
5 p.
|
artikel
|
| 35 |
Doping effect and vacancy formation on ionic conductivity of zirconia ceramics
|
Yeh, Tsung-Her
|
|
2008
|
69 |
2-3 |
p. 386-392
7 p.
|
artikel
|
| 36 |
Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V / G criterion
|
Van Goethem, N.
|
|
2008
|
69 |
2-3 |
p. 320-324
5 p.
|
artikel
|
| 37 |
Effect of divalent dopants on crystal structure and electrical properties of LaAlO3 perovskite
|
Chen, Te-Yuan
|
|
2008
|
69 |
2-3 |
p. 540-546
7 p.
|
artikel
|
| 38 |
Effect of divalent dopants on defect structure and electrical properties of Bi2WO6
|
Hsieh, Cheng-Yen
|
|
2008
|
69 |
2-3 |
p. 302-306
5 p.
|
artikel
|
| 39 |
Effect of in-grain porous silicon structure on photovoltaic device
|
Lin, Chiung-Wei
|
|
2008
|
69 |
2-3 |
p. 641-644
4 p.
|
artikel
|
| 40 |
Effect of Li+ addition on crystal structure and electrical conduction of highly defective La1/3NbO3 perovskite
|
Yang, Kai-Yun
|
|
2008
|
69 |
2-3 |
p. 393-399
7 p.
|
artikel
|
| 41 |
Effect of microwave irradiation on surface characteristics and luminescent properties of BaMgAl10O17:Eu blue phosphor
|
Kuo, Kuan-Ting
|
|
2008
|
69 |
2-3 |
p. 362-365
4 p.
|
artikel
|
| 42 |
Effect of oxygen nonstoichiometry on electrical conduction property of BaBiO3− δ
|
Hashimoto, Takuya
|
|
2008
|
69 |
2-3 |
p. 284-288
5 p.
|
artikel
|
| 43 |
Effects of different buffer layers in flexible organic light-emitting diodes
|
Tsai, Y.S.
|
|
2008
|
69 |
2-3 |
p. 764-768
5 p.
|
artikel
|
| 44 |
Effects of Ga content on Cu(In,Ga)Se2 solar cells studied by numerical modeling
|
Huang, Chia-Hua
|
|
2008
|
69 |
2-3 |
p. 330-334
5 p.
|
artikel
|
| 45 |
Effects of junction parameters on Cu(In,Ga)Se2 solar cells
|
Huang, Chia-Hua
|
|
2008
|
69 |
2-3 |
p. 779-783
5 p.
|
artikel
|
| 46 |
Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide
|
Wu, Jun
|
|
2008
|
69 |
2-3 |
p. 555-560
6 p.
|
artikel
|
| 47 |
Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering
|
Chung, Jeng-Lin
|
|
2008
|
69 |
2-3 |
p. 535-539
5 p.
|
artikel
|
| 48 |
Electrochromic properties of TiO2 thin films prepared by chemical solution deposition method
|
Wang, Chih-Ming
|
|
2008
|
69 |
2-3 |
p. 451-455
5 p.
|
artikel
|
| 49 |
Enhanced growth of CoSi2 thin films on (001)Si with Co/Au/Co sandwich structures
|
Cheng, S.L.
|
|
2008
|
69 |
2-3 |
p. 441-445
5 p.
|
artikel
|
| 50 |
Evaluation of properties of Ta–Ni amorphous thin film for copper metallization in integrated circuits
|
Fang, J.S.
|
|
2008
|
69 |
2-3 |
p. 430-434
5 p.
|
artikel
|
| 51 |
Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
|
Yang, Chung-Chieh
|
|
2008
|
69 |
2-3 |
p. 589-592
4 p.
|
artikel
|
| 52 |
Fabrication and characteristics of Ba(Zr0.1,Ti0.9)O3 thin films on glass substrate
|
Chen, Kai-Huang
|
|
2008
|
69 |
2-3 |
p. 461-464
4 p.
|
artikel
|
| 53 |
Fabrication of an organic thin-film transistor by direct deposit of a pentacene layer onto a silicon substrate
|
Wu, You-Lin
|
|
2008
|
69 |
2-3 |
p. 730-733
4 p.
|
artikel
|
| 54 |
Formation mechanism of grown-in defects in silicon
|
Okino, T.
|
|
2008
|
69 |
2-3 |
p. 307-310
4 p.
|
artikel
|
| 55 |
Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates
|
Wang, W.K.
|
|
2008
|
69 |
2-3 |
p. 714-718
5 p.
|
artikel
|
| 56 |
High drivability μc-Si TFT device with a compound channel layer structure
|
Lin, Chiung-Wei
|
|
2008
|
69 |
2-3 |
p. 645-647
3 p.
|
artikel
|
| 57 |
High-K dielectric PZN-based materials prepared by microwave sintering for reduction of defects
|
Li, C.L.
|
|
2008
|
69 |
2-3 |
p. 611-615
5 p.
|
artikel
|
| 58 |
Improved characteristics of Bi4Ti3O12 thin film on ITO glass by using excess Bi2O3-added Bi4Ti3O12 ceramic as source target
|
Chia, W.K.
|
|
2008
|
69 |
2-3 |
p. 465-469
5 p.
|
artikel
|
| 59 |
Influences of surface fluorination and carbon coating with furan resin in natural graphite as anode in lithium-ion batteries
|
Wu, Yu-Shiang
|
|
2008
|
69 |
2-3 |
p. 376-382
7 p.
|
artikel
|
| 60 |
Interface integration defect of copper and low-K materials beyond nano-scale copper damascene process
|
Chen, Kei-Wei
|
|
2008
|
69 |
2-3 |
p. 509-512
4 p.
|
artikel
|
| 61 |
Interfacial reactions of 2-D periodic arrays of Ni metal dots on (001) Si
|
Cheng, S.L.
|
|
2008
|
69 |
2-3 |
p. 620-624
5 p.
|
artikel
|
| 62 |
Investigation of vacancy defect in InP crystal by positron lifetime measurement
|
Sun, Niefeng
|
|
2008
|
69 |
2-3 |
p. 372-375
4 p.
|
artikel
|
| 63 |
Liquid-phase epitaxy of In-doped PbTe for the application of mid-infrared semiconductor laser
|
Yasuda, Arata
|
|
2008
|
69 |
2-3 |
p. 727-729
3 p.
|
artikel
|
| 64 |
Luminescence and structural properties of silicon-rich nitride by X-ray absorption spectroscopy
|
Hsiao, H.L.
|
|
2008
|
69 |
2-3 |
p. 278-283
6 p.
|
artikel
|
| 65 |
MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics
|
Pchelyakov, O.P.
|
|
2008
|
69 |
2-3 |
p. 669-672
4 p.
|
artikel
|
| 66 |
Mechanism of over-etching defects during Ta/TaN barrier resputtering in micro-trench for Cu metallization
|
Tsao, Jung-Chih
|
|
2008
|
69 |
2-3 |
p. 561-565
5 p.
|
artikel
|
| 67 |
Mechanism of the metal–insulator–metal capacitance drift for advanced mixed-signal copper process device
|
JangJian, Shiu-Ko
|
|
2008
|
69 |
2-3 |
p. 747-751
5 p.
|
artikel
|
| 68 |
Monte Carlo simulation of atoms diffusion via vacancies in fcc-structured nanofilms
|
Chieh, Yu-Chih
|
|
2008
|
69 |
2-3 |
p. 315-319
5 p.
|
artikel
|
| 69 |
Nonstoichiometry and thermal expansion of SnTe
|
Nashchekina, O.N.
|
|
2008
|
69 |
2-3 |
p. 273-277
5 p.
|
artikel
|
| 70 |
Observation of room temperature negative differential resistance (NDR) in organic light-emitting diode with inorganic dopant
|
Fang, Yean-Kuen
|
|
2008
|
69 |
2-3 |
p. 738-741
4 p.
|
artikel
|
| 71 |
Optical and electrical properties of GaN micron-scale light-emitting diode
|
Hwang, Jung-Min
|
|
2008
|
69 |
2-3 |
p. 752-758
7 p.
|
artikel
|
| 72 |
Optical characterization of CdSe nanocrystals
|
Chen, Cheng-yuan
|
|
2008
|
69 |
2-3 |
p. 629-632
4 p.
|
artikel
|
| 73 |
Optical characterization of Ge/Si superlattices with stacked nanoripples
|
Lee, J.R.
|
|
2008
|
69 |
2-3 |
p. 490-492
3 p.
|
artikel
|
| 74 |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
|
Chen, Cheng-Yuan
|
|
2008
|
69 |
2-3 |
p. 493-496
4 p.
|
artikel
|
| 75 |
Optical properties of Sr1− x Eu x Ga2S4 mixed compounds
|
Hidaka, Chiharu
|
|
2008
|
69 |
2-3 |
p. 358-361
4 p.
|
artikel
|
| 76 |
Organofluorosilicate glass: A dense low-k dielectric with superior materials properties
|
Cheng, Y.L.
|
|
2008
|
69 |
2-3 |
p. 518-522
5 p.
|
artikel
|
| 77 |
Phase diagram and crystal growth of Mn-substituted CuInSe2 system and their defect properties
|
Matsushita, Hiroaki
|
|
2008
|
69 |
2-3 |
p. 294-297
4 p.
|
artikel
|
| 78 |
Phase diagram, crystal growth and characterization of Mn-substituted ZnGeAs2 system
|
Matsushita, Hiroaki
|
|
2008
|
69 |
2-3 |
p. 408-410
3 p.
|
artikel
|
| 79 |
Photoluminescence characterization of ZnCdSe/ZnSe quantum dot systems with different ZnCdSe coverages
|
Jen, Jen-Yi
|
|
2008
|
69 |
2-3 |
p. 485-489
5 p.
|
artikel
|
| 80 |
Plasma treatment effects on hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition
|
Wu, Jun
|
|
2008
|
69 |
2-3 |
p. 505-508
4 p.
|
artikel
|
| 81 |
Preface
|
Hwang, Huey-Liang
|
|
2008
|
69 |
2-3 |
p. 255-
1 p.
|
artikel
|
| 82 |
Preparation and characterization of CuInSe2 nano-particles
|
Lu, Wei-Lun
|
|
2008
|
69 |
2-3 |
p. 637-640
4 p.
|
artikel
|
| 83 |
Preparation and ferroelectric properties of barium-ion-doped strontium bismuth tantalate thin films
|
Lu, Chung-Hsin
|
|
2008
|
69 |
2-3 |
p. 480-484
5 p.
|
artikel
|
| 84 |
Preparation of highly C-axis-oriented PZT films on Si substrate with MgO buffer layer by the sol–gel method
|
Shih, Wen-Ching
|
|
2008
|
69 |
2-3 |
p. 593-596
4 p.
|
artikel
|
| 85 |
Preparation of low leakage current fluorine-doped silicon-oxycarbide by PECVD
|
Huang, C.C.
|
|
2008
|
69 |
2-3 |
p. 742-746
5 p.
|
artikel
|
| 86 |
Processing and properties of CaCu3Ti4O12 ceramics
|
Wang, Chih-Ming
|
|
2008
|
69 |
2-3 |
p. 608-610
3 p.
|
artikel
|
| 87 |
Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy
|
Sugai, Maki
|
|
2008
|
69 |
2-3 |
p. 411-414
4 p.
|
artikel
|
| 88 |
Self-doped polyaniline-modified anode for polymer light-emitting diode
|
Yang, Chien-Hsin
|
|
2008
|
69 |
2-3 |
p. 769-774
6 p.
|
artikel
|
| 89 |
Silicon single-charge transfer devices
|
Ono, Yukinori
|
|
2008
|
69 |
2-3 |
p. 702-707
6 p.
|
artikel
|
| 90 |
Single crystal growth of RE doped thiogallates and their optical properties
|
Takizawa, T.
|
|
2008
|
69 |
2-3 |
p. 347-352
6 p.
|
artikel
|
| 91 |
Solidity is an imperfect state
|
Queisser, Hans J.
|
|
2008
|
69 |
2-3 |
p. 256-258
3 p.
|
artikel
|
| 92 |
Study of copper-doped SiO2 films prepared by co-sputtering of copper and SiO2
|
Wang, Chen-Jui
|
|
2008
|
69 |
2-3 |
p. 523-526
4 p.
|
artikel
|
| 93 |
Study of local segregation in GaInNAs using EXAFS measurements
|
Mori, Takahiro
|
|
2008
|
69 |
2-3 |
p. 298-301
4 p.
|
artikel
|
| 94 |
Substitutional effect on the transport properties of Er4Si5
|
Lue, C.S.
|
|
2008
|
69 |
2-3 |
p. 269-272
4 p.
|
artikel
|
| 95 |
Surface carbonization of Si(100) by C2H2 and its effects on the subsequent SiC(100) epitaxial film growth
|
Liu, Chie Sheng
|
|
2008
|
69 |
2-3 |
p. 576-579
4 p.
|
artikel
|
| 96 |
Synthesis and photocatalysis of mesoporous anatase TiO2 powders incorporated Ag nanoparticles
|
Wang, Hong-Wen
|
|
2008
|
69 |
2-3 |
p. 633-636
4 p.
|
artikel
|
| 97 |
Synthesis and physical characteristics of AlO x -coated ZnO nanorod arrays grown in aqueous solution at low temperatures
|
Hsiao, Chi-Sheng
|
|
2008
|
69 |
2-3 |
p. 625-628
4 p.
|
artikel
|
| 98 |
Synthesis of SBA-16 and SBA-15 mesoporous silica crystals templated with neutral block copolymer surfactants
|
Lin, Chun-Ling
|
|
2008
|
69 |
2-3 |
p. 415-419
5 p.
|
artikel
|
| 99 |
Terahertz-wave absorption in GaP crystals with different carrier densities
|
Saito, K.
|
|
2008
|
69 |
2-3 |
p. 597-600
4 p.
|
artikel
|
| 100 |
Terahertz wave generation from GaSe crystals and effects of crystallinity
|
Kenmochi, Atsushi
|
|
2008
|
69 |
2-3 |
p. 605-607
3 p.
|
artikel
|
| 101 |
The effect of oxygen content on bonding configuration and properties of low-k organosilicate glass dielectric film
|
Chen, Sheng-Wen
|
|
2008
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69 |
2-3 |
p. 513-517
5 p.
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artikel
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| 102 |
The electrical property of plasma-treated Ta/TaN x diffusion barrier
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Wang, Yu-Sheng
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2008
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69 |
2-3 |
p. 601-604
4 p.
|
artikel
|
| 103 |
The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowth
|
Chang, Ching-I
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2008
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69 |
2-3 |
p. 420-424
5 p.
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artikel
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| 104 |
The morphology of etch pits on a sapphire surface
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Liu, Che-Ming
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2008
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69 |
2-3 |
p. 572-575
4 p.
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artikel
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| 105 |
The problem of doping of non-stoichiometric phases
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Rogacheva, E.I.
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2008
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69 |
2-3 |
p. 259-268
10 p.
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artikel
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| 106 |
Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition
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Hsiao, Wen-Chu
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2008
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69 |
2-3 |
p. 648-652
5 p.
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artikel
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| 107 |
Thin silicon carbonitride films are perspective low-k materials
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Fainer, N.I.
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2008
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69 |
2-3 |
p. 661-668
8 p.
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artikel
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| 108 |
Tracer diffusion of Cu in CVD β-SiC
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Suino, A.
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2008
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69 |
2-3 |
p. 311-314
4 p.
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artikel
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| 109 |
Transition metal-doped ZnO nanorods synthesized by chemical methods
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Li, Dan
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2008
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69 |
2-3 |
p. 616-619
4 p.
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artikel
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| 110 |
Vacancy-type defects in boron-reduced VCz GaAs crystals
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Kiessling, F.-M.
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2008
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69 |
2-3 |
p. 289-293
5 p.
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artikel
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| 111 |
Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs
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Luna, E.
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2008
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69 |
2-3 |
p. 343-346
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artikel
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| 112 |
Volatile hafnium(IV) compounds with beta-diketonate and cyclopentadienyl derivatives
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Morozova, Natalia B.
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2008
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69 |
2-3 |
p. 673-679
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