| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of HSG-7000 silsesquioxane-based low-k dielectric hot plate curing using Raman spectroscopy
|
Doux, C.
|
|
2006
|
83 |
2 |
p. 387-391
5 p.
|
artikel
|
| 2 |
Analysis of three-dimensional proximity effect in electron-beam lithography
|
Lee, S.-Y.
|
|
2006
|
83 |
2 |
p. 336-344
9 p.
|
artikel
|
| 3 |
A new method to extract gate coupling ratio and oxide trapped charge in flash memory cell
|
Tseng, Jermyn M.Z.
|
|
2006
|
83 |
2 |
p. 218-220
3 p.
|
artikel
|
| 4 |
Behavior of (111) grains during the thermal treatment of copper film studied in situ by electron back-scatter diffraction
|
Mirpuri, Kabir-kumar
|
|
2006
|
83 |
2 |
p. 221-235
15 p.
|
artikel
|
| 5 |
CHF3–O2 reactive ion etching of 4H-SiC and the role of oxygen
|
Xia, J.H.
|
|
2006
|
83 |
2 |
p. 381-386
6 p.
|
artikel
|
| 6 |
Determination of swing curve “shifts” as a function of illumination conditions: Impact on the CD uniformity
|
Di Dio, Luigi
|
|
2006
|
83 |
2 |
p. 357-361
5 p.
|
artikel
|
| 7 |
Dielectric spectroscopy studies on (PVP+PVA) polyblend film
|
Subba Reddy, Ch.V.
|
|
2006
|
83 |
2 |
p. 281-285
5 p.
|
artikel
|
| 8 |
Effect of doping concentration on the grain boundary trap density and threshold voltage of polycrystalline SOI MOSFETs
|
Joseph Daniel, R.
|
|
2006
|
83 |
2 |
p. 252-258
7 p.
|
artikel
|
| 9 |
Effect of RuO2 electrode on laser-MBE prepared HfO2 gate dielectrics
|
Lu, Y.K.
|
|
2006
|
83 |
2 |
p. 371-375
5 p.
|
artikel
|
| 10 |
Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures
|
Tyaginov, S.E.
|
|
2006
|
83 |
2 |
p. 376-380
5 p.
|
artikel
|
| 11 |
Effects of active area and gate doping method on program threshold voltage in an EEPROM cell
|
Kim, Youn-Jang
|
|
2006
|
83 |
2 |
p. 247-251
5 p.
|
artikel
|
| 12 |
Enhanced breakdown voltage and reduced self-heating effects in thin-film lateral bipolar transistors: Design and analysis using 2-D simulation
|
Roy, Sukhendu Deb
|
|
2006
|
83 |
2 |
p. 303-311
9 p.
|
artikel
|
| 13 |
Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas
|
Na, S.W.
|
|
2006
|
83 |
2 |
p. 328-335
8 p.
|
artikel
|
| 14 |
Extraction of the floating-gate capacitive couplings for drain turn-on estimation in discrete-trap memories
|
Monzio Compagnoni, Christian
|
|
2006
|
83 |
2 |
p. 319-322
4 p.
|
artikel
|
| 15 |
Fabrication of a low resistivity tantalum nitride thin film
|
Shen, Hong
|
|
2006
|
83 |
2 |
p. 206-212
7 p.
|
artikel
|
| 16 |
Fabrication of nano-sized resist patterns on flexible plastic film using thermal curing nano-imprint lithography
|
Lee, Heon
|
|
2006
|
83 |
2 |
p. 323-327
5 p.
|
artikel
|
| 17 |
High-temperature wire sweep characteristics of semiconductor package for variable loop-height wirebonding technology
|
Kung, Huang-Kuang
|
|
2006
|
83 |
2 |
p. 197-205
9 p.
|
artikel
|
| 18 |
IFC: Editorial Board
|
|
|
2006
|
83 |
2 |
p. CO2-
1 p.
|
artikel
|
| 19 |
Impact of molecular weight of polymers and shear rate effects for nanoimprint lithography
|
Schulz, H.
|
|
2006
|
83 |
2 |
p. 259-280
22 p.
|
artikel
|
| 20 |
Improvement of TEOS-chemical mechanical polishing performance by control of slurry temperature
|
Kim, Nam-Hoon
|
|
2006
|
83 |
2 |
p. 286-292
7 p.
|
artikel
|
| 21 |
Influence of temperature on the etching rate of SiO2 in CF4 +O2 plasma
|
Knizikevičius, R.
|
|
2006
|
83 |
2 |
p. 193-196
4 p.
|
artikel
|
| 22 |
Inkjet printed silver source/drain electrodes for low-cost polymer thin film transistors
|
Xue, Fengliang
|
|
2006
|
83 |
2 |
p. 298-302
5 p.
|
artikel
|
| 23 |
Integrity of copper–hafnium, hafnium nitride and multilayered amorphous-like hafnium nitride metallization under various thickness
|
Ou, Keng-Liang
|
|
2006
|
83 |
2 |
p. 312-318
7 p.
|
artikel
|
| 24 |
Nitridation of hafnium oxide by reactive sputtering
|
Tong, K.Y.
|
|
2006
|
83 |
2 |
p. 293-297
5 p.
|
artikel
|
| 25 |
Optically variable micro-mirror arrays fabricated by graytone lithography
|
Leech, Patrick W.
|
|
2006
|
83 |
2 |
p. 351-356
6 p.
|
artikel
|
| 26 |
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
|
Granzner, R.
|
|
2006
|
83 |
2 |
p. 241-246
6 p.
|
artikel
|
| 27 |
Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect
|
Qu, Xin-Ping
|
|
2006
|
83 |
2 |
p. 236-240
5 p.
|
artikel
|
| 28 |
Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions
|
Kim, Nam-Hoon
|
|
2006
|
83 |
2 |
p. 362-370
9 p.
|
artikel
|
| 29 |
The improvement of thermal stability of nickel silicide by adding a thin Zr interlayer
|
Huang, Wei
|
|
2006
|
83 |
2 |
p. 345-350
6 p.
|
artikel
|
| 30 |
Thermal analysis for step and flash imprint lithography during UV curing process
|
Kim, Eui Kyoon
|
|
2006
|
83 |
2 |
p. 213-217
5 p.
|
artikel
|
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