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                                       Details for article 5 of 30 found articles
 
 
  CHF3–O2 reactive ion etching of 4H-SiC and the role of oxygen
 
 
Title: CHF3–O2 reactive ion etching of 4H-SiC and the role of oxygen
Author: Xia, J.H.
Rusli,
Choy, S.F.
Gopalakrishan, R.
Tin, C.C.
Yoon, S.F.
Ahn, J.
Appeared in: Microelectronic engineering
Paging: Volume 83 (2006) nr. 2 pages 6 p.
Year: 2006
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 30 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands