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                             57 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acknowledgements 2001
 55 1-4 p. 3-
1 p.
 artikel
2 A comparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitride Lanckmans, F.
 2001
 55 1-4 p. 329-335
7 p.
 artikel
3 Advanced long throw PVD for contact to silicon and via applications Urbansky, N.
 2001
 55 1-4 p. 397-402
6 p.
 artikel
4 Advanced salicided 4 Mbit flash memory array with borderless contacts Peschiaroli, D.
 2001
 55 1-4 p. 137-143
7 p.
 artikel
5 Advanced silver-based metallization patterning for ULSI applications Alford, T.L.
 2001
 55 1-4 p. 383-388
6 p.
 artikel
6 AFM measurement of the grain size in polycrystalline titanium silicides Cazzaniga, F.
 2001
 55 1-4 p. 93-99
7 p.
 artikel
7 An additional effect of texture on the electromigration behavior of aluminum Dorgelo, A.M
 2001
 55 1-4 p. 337-340
4 p.
 artikel
8 A percolative simulation of electromigration phenomena Pennetta, C.
 2001
 55 1-4 p. 349-353
5 p.
 artikel
9 Author Index 2001
 55 1-4 p. 409-417
9 p.
 artikel
10 Brillouin scattering of TiSi2: elastic constants and related thermodynamic parameters Pastorelli, R.
 2001
 55 1-4 p. 129-135
7 p.
 artikel
11 Buffer design and insertion for global interconnections in 0.1 μm technology Persson, S.
 2001
 55 1-4 p. 19-28
10 p.
 artikel
12 Committees 2001
 55 1-4 p. 1-
1 p.
 artikel
13 Comparative study of Cu and CuAl0.3 wt.% films Schwalbe, G
 2001
 55 1-4 p. 341-348
8 p.
 artikel
14 Comparison of copper damascene and aluminum RIE metallization in BICMOS technology Helneder, H
 2001
 55 1-4 p. 257-268
12 p.
 artikel
15 Copper chemical mechanical polishing using a slurry-free technique Nguyen, V.H.
 2001
 55 1-4 p. 305-312
8 p.
 artikel
16 Copper passivation of boron in Si1−x Ge x alloys and boron reactivation kinetics Barthula, M.
 2001
 55 1-4 p. 323-328
6 p.
 artikel
17 CVD and PVD copper integration for dual damascene metallization in a 0.18 μm process Proust, M
 2001
 55 1-4 p. 269-275
7 p.
 artikel
18 Damascene test structures for the evaluation of barrier layer performance against copper diffusion Motte, P
 2001
 55 1-4 p. 291-296
6 p.
 artikel
19 Design solutions for the interconnection parasitic effects in deep sub-micron technologies Baldi, L.
 2001
 55 1-4 p. 11-18
8 p.
 artikel
20 Effect of a thin Ta layer on the C49–C54 transition La Via, F.
 2001
 55 1-4 p. 123-128
6 p.
 artikel
21 Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC Defives, D.
 2001
 55 1-4 p. 369-374
6 p.
 artikel
22 Electronic recombinations and ionic transport in BPSG layers Vedda, A.
 2001
 55 1-4 p. 59-64
6 p.
 artikel
23 Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001) Falke, M.
 2001
 55 1-4 p. 171-175
5 p.
 artikel
24 EPR and UV-Raman study of BPSG thin films: structure and defects Fanciulli, M.
 2001
 55 1-4 p. 65-71
7 p.
 artikel
25 Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization Kohn, A.
 2001
 55 1-4 p. 297-303
7 p.
 artikel
26 Fabrication of fine copper lines by selective chemical vapor deposition on silicon substrates Vidal, S.
 2001
 55 1-4 p. 285-290
6 p.
 artikel
27 Fast and accurate analysis of the multiconductor interconnects Ymeri, H.
 2001
 55 1-4 p. 37-42
6 p.
 artikel
28 Growth and properties of LPCVD W–Si–N barrier layers Bystrova, S.
 2001
 55 1-4 p. 189-195
7 p.
 artikel
29 Highly metastable amorphous or near-amorphous ternary films (mictamict alloys) Nicolet, M.-A.
 2001
 55 1-4 p. 357-367
11 p.
 artikel
30 Impact of plasma treatment time on MOCVD-TiN properties and on the electrical performance of deep contacts Sabbadini, A
 2001
 55 1-4 p. 205-211
7 p.
 artikel
31 Influence of barrier and cap layer deposition on the properties of capped and non-capped porous silicon oxide Schulz, S.E
 2001
 55 1-4 p. 45-52
8 p.
 artikel
32 Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion Riedel, S.
 2001
 55 1-4 p. 213-218
6 p.
 artikel
33 Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures Donaton, R.A.
 2001
 55 1-4 p. 277-283
7 p.
 artikel
34 Interface characteristics between tungsten silicide electrodes and thin dielectrics Sell, B.
 2001
 55 1-4 p. 197-203
7 p.
 artikel
35 Introduction Paletto, Ing.Raimondo
 2001
 55 1-4 p. 7-8
2 p.
 artikel
36 Key reliability issues for copper integration in damascene architecture Gonella, R
 2001
 55 1-4 p. 245-255
11 p.
 artikel
37 Kinetics of the C49–C54 transformation by micro-Raman imaging Privitera, S.
 2001
 55 1-4 p. 109-114
6 p.
 artikel
38 Modification of β-FeSi2 precipitate layers in silicon by hydrogen implantation Schuller, B.
 2001
 55 1-4 p. 219-225
7 p.
 artikel
39 Nanometer patterning of thin CoSi2-films by application of local stress Kluth, P.
 2001
 55 1-4 p. 177-182
6 p.
 artikel
40 Optimized thermal processing for Ti-capped CoSi2 for 0.13 μm technology Lindsay, R.
 2001
 55 1-4 p. 157-162
6 p.
 artikel
41 Orientation-dependent stress build-up during the formation of epitaxial CoSi2 Steegen, An
 2001
 55 1-4 p. 145-150
6 p.
 artikel
42 Preface de Santi, Giorgi
 2001
 55 1-4 p. 5-6
2 p.
 artikel
43 Preparation and properties of MnSi1.7 on Si(001) Teichert, S.
 2001
 55 1-4 p. 227-232
6 p.
 artikel
44 Properties of posttreated low κ flowfill™ films and their stability after etch, resist and polymer strip processes Beekmann, K.
 2001
 55 1-4 p. 73-79
7 p.
 artikel
45 Self-encapsulation effects on the electromigration resistance of silver lines Alford, T.L.
 2001
 55 1-4 p. 389-395
7 p.
 artikel
46 Silicon diffusion in competitive TiSi2 phases by molecular dynamics simulations Miglio, Leo
 2001
 55 1-4 p. 83-92
10 p.
 artikel
47 Simulation of the dielectric constant of aerogels and estimation of their water content Xiao, X.
 2001
 55 1-4 p. 53-57
5 p.
 artikel
48 Simulations and measurements of capacitance in dielectric stacks and consequences for integration De Roest, D
 2001
 55 1-4 p. 29-35
7 p.
 artikel
49 Stability of conducting amorphous Ru–Si–O thin films under oxygen annealing Cherry, H.B
 2001
 55 1-4 p. 403-408
6 p.
 artikel
50 Structural and optical properties of Fe1−x M x Si2 thin films (M=Co, Mn; 0≤x≤0.20) Fanciulli, M.
 2001
 55 1-4 p. 233-241
9 p.
 artikel
51 Structural characterisation of titanium silicon carbide reaction Makhtari, A.
 2001
 55 1-4 p. 375-381
7 p.
 artikel
52 Structural investigations of the C49–C54 transformation in TiSi2 thin films Chenevier, B
 2001
 55 1-4 p. 115-122
8 p.
 artikel
53 Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stability Alberti, A.
 2001
 55 1-4 p. 163-169
7 p.
 artikel
54 The effect of the reaction temperature on the thermal stability of polycrystalline CoSi2 layers on Si(001) Alberti, A.
 2001
 55 1-4 p. 151-156
6 p.
 artikel
55 The electrical and material properties of MOS capacitors with electrolessly deposited integrated copper gate Shacham-Diamand, Yosi
 2001
 55 1-4 p. 313-322
10 p.
 artikel
56 Thermal stability of amorphous Ti3Si1O8 thin films Giauque, P.H.
 2001
 55 1-4 p. 183-188
6 p.
 artikel
57 Ti-silicide formation during isochronal annealing followed by in situ ellipsometry Stark, T.
 2001
 55 1-4 p. 101-107
7 p.
 artikel
                             57 gevonden resultaten
 
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