| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures
|
Salome, P.
|
|
1998
|
38 |
11 |
p. 1763-1772
10 p.
|
artikel
|
| 2 |
Designing power supply clamps for electrostatic discharge protection of integrated circuits
|
Maloney, T.J.
|
|
1998
|
38 |
11 |
p. 1691-1703
13 p.
|
artikel
|
| 3 |
Does the ESD-failure current obtained by transmission-line pulsing always correlate to human body model tests?
|
Stadler, W
|
|
1998
|
38 |
11 |
p. 1773-1780
8 p.
|
artikel
|
| 4 |
Editorial
|
|
|
1998
|
38 |
11 |
p. 1647-
1 p.
|
artikel
|
| 5 |
ESD failure analysis methodology
|
Colvin, J
|
|
1998
|
38 |
11 |
p. 1705-1714
10 p.
|
artikel
|
| 6 |
ESD issues in compound semiconductor high-frequency devices and circuits
|
Bock, K.
|
|
1998
|
38 |
11 |
p. 1781-1793
13 p.
|
artikel
|
| 7 |
ESD laboratory simulations and signature analysis of a CMOS programmable logic product 1 1 The following is a condensed and revised version of the original paper presented at ISTFA-94: Proceedings of the 20th International Symposium for testing and Failure Analysis, p117 (1994), Henry et al., see ref[26].
|
Henry, L.G.
|
|
1998
|
38 |
11 |
p. 1715-1721
7 p.
|
artikel
|
| 8 |
ESD protection in thin film silicon on insulator technologies
|
Smith, J.C
|
|
1998
|
38 |
11 |
p. 1669-1680
12 p.
|
artikel
|
| 9 |
ESD protection techniques for high frequency integrated circuits
|
Croft, G.
|
|
1998
|
38 |
11 |
p. 1681-1689
9 p.
|
artikel
|
| 10 |
ESD robustness prediction and protection device design in partially depleted SOI technology
|
Raha, P.
|
|
1998
|
38 |
11 |
p. 1723-1731
9 p.
|
artikel
|
| 11 |
Novel concept for high level overdrive tolerance of GaAs based FETs
|
Lipka, K.M
|
|
1998
|
38 |
11 |
p. 1795-1801
7 p.
|
artikel
|
| 12 |
On the use of n-well resistors in ESD protections
|
Notermans, G.
|
|
1998
|
38 |
11 |
p. 1741-1748
8 p.
|
artikel
|
| 13 |
Study of the ESD behavior of different clamp configurations in a 0.35 μm CMOS technology
|
Richier, C
|
|
1998
|
38 |
11 |
p. 1733-1739
7 p.
|
artikel
|
| 14 |
The impact of MOSFET technology evolution and scaling on electrostatic discharge protection
|
Voldman, Steven H
|
|
1998
|
38 |
11 |
p. 1649-1668
20 p.
|
artikel
|
| 15 |
Unique ESD failure mechanisms during negative to Vcc HBM tests
|
Chaine, M
|
|
1998
|
38 |
11 |
p. 1749-1761
13 p.
|
artikel
|
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