| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions
|
Sakic, Agata
|
|
2013
|
84 |
C |
p. 65-73
9 p.
|
artikel
|
| 2 |
A manufacturable process integration approach for graphene devices
|
Vaziri, Sam
|
|
2013
|
84 |
C |
p. 185-190
6 p.
|
artikel
|
| 3 |
Cell libraries for robust low-voltage operation in nanometer technologies
|
Gemmeke, Tobias
|
|
2013
|
84 |
C |
p. 132-141
10 p.
|
artikel
|
| 4 |
Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
|
Kawanago, T.
|
|
2013
|
84 |
C |
p. 53-57
5 p.
|
artikel
|
| 5 |
Designing digital circuits with nano-scale devices: Challenges and opportunities
|
Belleville, Marc
|
|
2013
|
84 |
C |
p. 38-45
8 p.
|
artikel
|
| 6 |
Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices
|
Jungemann, C.
|
|
2013
|
84 |
C |
p. 112-119
8 p.
|
artikel
|
| 7 |
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons
|
Poljak, M.
|
|
2013
|
84 |
C |
p. 103-111
9 p.
|
artikel
|
| 8 |
Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model
|
Gnani, E.
|
|
2013
|
84 |
C |
p. 96-102
7 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2013
|
84 |
C |
p. IFC-
1 p.
|
artikel
|
| 10 |
Flexible double gate a-IGZO TFT fabricated on free standing polyimide foil
|
Münzenrieder, Niko
|
|
2013
|
84 |
C |
p. 198-204
7 p.
|
artikel
|
| 11 |
Foreword
|
Zimmer, Thomas
|
|
2013
|
84 |
C |
p. 1-
1 p.
|
artikel
|
| 12 |
High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrate
|
Jacob, S.
|
|
2013
|
84 |
C |
p. 167-178
12 p.
|
artikel
|
| 13 |
Hot-electron conduction in ovonic materials
|
Jacoboni, Carlo
|
|
2013
|
84 |
C |
p. 90-95
6 p.
|
artikel
|
| 14 |
Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory
|
Mahmoudi, Hiwa
|
|
2013
|
84 |
C |
p. 191-197
7 p.
|
artikel
|
| 15 |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
|
Zhang, Xingui
|
|
2013
|
84 |
C |
p. 83-89
7 p.
|
artikel
|
| 16 |
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks
|
Ritzenthaler, R.
|
|
2013
|
84 |
C |
p. 22-27
6 p.
|
artikel
|
| 17 |
New parameter extraction method based on split C–V measurements in FDSOI MOSFETs
|
Ben Akkez, Imed
|
|
2013
|
84 |
C |
p. 142-146
5 p.
|
artikel
|
| 18 |
80ns/45GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices
|
Weiß, Mario
|
|
2013
|
84 |
C |
p. 74-82
9 p.
|
artikel
|
| 19 |
On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories
|
Longnos, F.
|
|
2013
|
84 |
C |
p. 155-159
5 p.
|
artikel
|
| 20 |
Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage
|
Wan, Jing
|
|
2013
|
84 |
C |
p. 147-154
8 p.
|
artikel
|
| 21 |
Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications
|
Kilchytska, V.
|
|
2013
|
84 |
C |
p. 28-37
10 p.
|
artikel
|
| 22 |
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
|
Amoroso, Salvatore Maria
|
|
2013
|
84 |
C |
p. 120-126
7 p.
|
artikel
|
| 23 |
RTS noise characterization of HfO x RRAM in high resistive state
|
Puglisi, Francesco M.
|
|
2013
|
84 |
C |
p. 160-166
7 p.
|
artikel
|
| 24 |
Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyond
|
Kim, Jaeyoon
|
|
2013
|
84 |
C |
p. 2-12
11 p.
|
artikel
|
| 25 |
Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor
|
Deshpande, V.
|
|
2013
|
84 |
C |
p. 179-184
6 p.
|
artikel
|
| 26 |
Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs
|
Bonfiglio, Valentina
|
|
2013
|
84 |
C |
p. 127-131
5 p.
|
artikel
|
| 27 |
Si tunneling transistors with high on-currents and slopes of 50mV/dec using segregation doped NiSi2 tunnel junctions
|
Knoll, L.
|
|
2013
|
84 |
C |
p. 211-215
5 p.
|
artikel
|
| 28 |
Small NMR biomolecular sensors
|
Sun, Nan
|
|
2013
|
84 |
C |
p. 13-21
9 p.
|
artikel
|
| 29 |
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs
|
Koyama, M.
|
|
2013
|
84 |
C |
p. 46-52
7 p.
|
artikel
|
| 30 |
Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
|
Alper, C.
|
|
2013
|
84 |
C |
p. 205-210
6 p.
|
artikel
|
| 31 |
Two-step annealing effects on ultrathin EOT higher-k (k =40) ALD-HfO2 gate stacks
|
Morita, Yukinori
|
|
2013
|
84 |
C |
p. 58-64
7 p.
|
artikel
|
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