| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer
|
Chowdhury, S.
|
|
2010
|
18 |
3 |
p. 246-249
|
artikel
|
| 2 |
Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe
|
Voitsekhovskii, A.V.
|
|
2010
|
18 |
3 |
p. 263-266
|
artikel
|
| 3 |
Changes in 8–12 μm CdxHg1−xTe photodiode arrays caused by fast neutron irradiation
|
Lysiuk, I.O.
|
|
2010
|
18 |
3 |
p. 342-344
|
artikel
|
| 4 |
Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage
|
Sengupta, S.
|
|
2010
|
18 |
3 |
p. 295-299
|
artikel
|
| 5 |
Control of acceptor doping in MOCVD HgCdTe epilayers
|
Madejczyk, P.
|
|
2010
|
18 |
3 |
p. 271-276
|
artikel
|
| 6 |
Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg1−xCdxTe
|
Zabudsky, V.
|
|
2010
|
18 |
3 |
p. 300-304
|
artikel
|
| 7 |
Energy-band diagrams and capacity-voltage characteristics of CdxHg1−xTe-based variband structures calculated with taking into account dependence of electron affinity on a composition
|
Voitsekhovskii, A.V.
|
|
2010
|
18 |
3 |
p. 241-245
|
artikel
|
| 8 |
Field effect transistors for terahertz detection - silicon versus III–V material issue
|
Knap, W.
|
|
2010
|
18 |
3 |
p. 225-230
|
artikel
|
| 9 |
Foreword
|
Sizov, F.F.
|
|
2010
|
18 |
3 |
p. 1
|
artikel
|
| 10 |
320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter
|
Vasilyev, V.V.
|
|
2010
|
18 |
3 |
p. 236-240
|
artikel
|
| 11 |
High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes
|
Kopytko, M.
|
|
2010
|
18 |
3 |
p. 277-283
|
artikel
|
| 12 |
History of HgTe-based photodetectors in Poland
|
Rogalski, A.
|
|
2010
|
18 |
3 |
p. 284-294
|
artikel
|
| 13 |
Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe
|
Voitsekhovskii, A.V.
|
|
2010
|
18 |
3 |
p. 259-262
|
artikel
|
| 14 |
Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy
|
Izhnin, I.I.
|
|
2010
|
18 |
3 |
p. 328-331
|
artikel
|
| 15 |
Linear HgCdTe IR FPA 288×4 with bidirectional scanning
|
Vasilyev, V.V.
|
|
2010
|
18 |
3 |
p. 332-337
|
artikel
|
| 16 |
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides
|
Zogg, H.
|
|
2010
|
18 |
3 |
p. 231-235
|
artikel
|
| 17 |
Nature of gallium deep centres in lead telluride based semiconductors
|
Petrenko, T.L.
|
|
2010
|
18 |
3 |
p. 310-317
|
artikel
|
| 18 |
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe
|
Gasan-Zade, S.G.
|
|
2010
|
18 |
3 |
p. 305-309
|
artikel
|
| 19 |
The study of HgCdTe MBE-grown structure with ion milling
|
Pociask, M.M.
|
|
2010
|
18 |
3 |
p. 338-341
|
artikel
|
| 20 |
THz/sub-THz bolometer based on electron heating in a semiconductor waveguide
|
Dobrovolsky, V.
|
|
2010
|
18 |
3 |
p. 250-258
|
artikel
|
| 21 |
Transport studies of MBE-grown InAs/GaSb superlattices
|
Szmulowicz, F.
|
|
2010
|
18 |
3 |
p. 267-270
|
artikel
|
| 22 |
Uncooled MWIR and LWIR photodetectors in Poland
|
Piotrowski, J.
|
|
2010
|
18 |
3 |
p. 318-327
|
artikel
|
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