Field effect transistors for terahertz detection - silicon versus III–V material issue
Titel:
Field effect transistors for terahertz detection - silicon versus III–V material issue
Auteur:
Knap, W. Videlier, H. Nadar, S. Coquillat, D. Dyakonova, N. Teppe, F. Bialek, M. Grynberg, M. Karpierz, K. Lusakowski, J. Nogajewski, K. Seliuta, D. Kašalynas, I. Valušis, G.