| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Bose condensation of interwell excitons in lateral traps: A phase diagram
|
Dremin, A. A.
|
|
2004
|
46 |
1 |
p. 170-172
|
artikel
|
| 2 |
Composition and elastic stresses in multilayer structures with Si1−xGex nanoislands
|
Valakh, M. Ya.
|
|
2004
|
46 |
1 |
p. 85-88
|
artikel
|
| 3 |
Correlation between the energy of SiGe nanoislands and their shape and size
|
Valakh, M. Ya.
|
|
2004
|
46 |
1 |
p. 67-70
|
artikel
|
| 4 |
Cyclotron resonance of holes in silicon in quantizing magnetic fields
|
Veksler, D. B.
|
|
2004
|
46 |
1 |
p. 150-152
|
artikel
|
| 5 |
Destruction and stabilization of the electromagnetic transparency of a semiconductor superlattice
|
Romanov, Yu. A.
|
|
2004
|
46 |
1 |
p. 157-163
|
artikel
|
| 6 |
Edge electroluminescence of silicon: An amorphous-silicon-crystalline-silicon heterostructure
|
Bresler, M. S.
|
|
2004
|
46 |
1 |
p. 13-16
|
artikel
|
| 7 |
Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy
|
Shengurov, V. G.
|
|
2004
|
46 |
1 |
p. 101-103
|
artikel
|
| 8 |
Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy
|
Shmagin, V. B.
|
|
2004
|
46 |
1 |
p. 109-112
|
artikel
|
| 9 |
Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si
|
Sobolev, N. A.
|
|
2004
|
46 |
1 |
p. 35-39
|
artikel
|
| 10 |
Electroluminescence efficiency of silicon diodes
|
Bresler, M. S.
|
|
2004
|
46 |
1 |
p. 5-9
|
artikel
|
| 11 |
Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices
|
Bagaev, V. S.
|
|
2004
|
46 |
1 |
p. 173-175
|
artikel
|
| 12 |
Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas
|
Antonov, A. V.
|
|
2004
|
46 |
1 |
p. 146-149
|
artikel
|
| 13 |
Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures
|
Andreev, B. A.
|
|
2004
|
46 |
1 |
p. 97-100
|
artikel
|
| 14 |
Erratum: “Phase separation of the spin system in the La0.93Sr0.07MnO3 crystal” [Phys. solid state 45 (12), 2297 (2003)]
|
Dubunin, S. F.
|
|
2004
|
46 |
1 |
p. 192
|
artikel
|
| 15 |
Formation of two-dimensional photonic-crystal structures in silicon for near-infrared region using fine focused ion beams
|
Vyatkin, A. F.
|
|
2004
|
46 |
1 |
p. 32-34
|
artikel
|
| 16 |
Ge/Si quantum dots in external electric and magnetic fields
|
Dvurechenskii, A. V.
|
|
2004
|
46 |
1 |
p. 56-59
|
artikel
|
| 17 |
Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface
|
Nikiforov, A. I.
|
|
2004
|
46 |
1 |
p. 77-79
|
artikel
|
| 18 |
Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer
|
Teys, S. A.
|
|
2004
|
46 |
1 |
p. 80-84
|
artikel
|
| 19 |
High-efficiency erbium ion luminescence in silicon nanocrystal systems
|
Kashkarov, P. K.
|
|
2004
|
46 |
1 |
p. 104-108
|
artikel
|
| 20 |
Intersubband cyclotron resonance of holes in strained Ge/GeSi(111) heterostructures with germanium wide quantum wells and cyclotron resonance of 1L electrons in GeSi layers
|
Aleshkin, V. Ya.
|
|
2004
|
46 |
1 |
p. 130-137
|
artikel
|
| 21 |
Intraband absorption and emission of light in quantum wells and quantum dots
|
Vorob’ev, L. E.
|
|
2004
|
46 |
1 |
p. 118-121
|
artikel
|
| 22 |
Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors
|
Lusakowski, J.
|
|
2004
|
46 |
1 |
p. 138-145
|
artikel
|
| 23 |
New mechanisms of localization of charge carriers in nanosilicon
|
Blonskyy, I. V.
|
|
2004
|
46 |
1 |
p. 45-48
|
artikel
|
| 24 |
Oleg Vladimirovich Losev: Pioneer of semiconductor electronics (celebrating one hundred years since his birth)
|
Novikov, M. A.
|
|
2004
|
46 |
1 |
p. 1-4
|
artikel
|
| 25 |
On a superlattice bloch oscillator
|
Romanov, Yu. A.
|
|
2004
|
46 |
1 |
p. 164-169
|
artikel
|
| 26 |
Phonon-assisted radiative electron-hole recombination in silicon quantum dots
|
Belyakov, V. A.
|
|
2004
|
46 |
1 |
p. 27-31
|
artikel
|
| 27 |
Photoconductivity of lead telluride-based doped alloys in the submillimeter wavelength range
|
Kristovskii, K. G.
|
|
2004
|
46 |
1 |
p. 122-124
|
artikel
|
| 28 |
Photoluminescence and structural defects in silicon layers implanted by iron ions
|
Shteinman, É. A.
|
|
2004
|
46 |
1 |
p. 22-26
|
artikel
|
| 29 |
Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes
|
Vostokov, N. V.
|
|
2004
|
46 |
1 |
p. 60-63
|
artikel
|
| 30 |
Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures
|
Burbaev, T. M.
|
|
2004
|
46 |
1 |
p. 71-73
|
artikel
|
| 31 |
Plasmon-induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure
|
Popov, V. V.
|
|
2004
|
46 |
1 |
p. 153-156
|
artikel
|
| 32 |
Resonant Raman scattering by strained and relaxed germanium quantum dots
|
Milekhin, A. G.
|
|
2004
|
46 |
1 |
p. 92-96
|
artikel
|
| 33 |
Resonant stokes and anti-stokes Raman scattering of light in CdSe/ZnSe nanostructures
|
Valakh, M. Ya.
|
|
2004
|
46 |
1 |
p. 176-178
|
artikel
|
| 34 |
Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis
|
Sokolov, L. V.
|
|
2004
|
46 |
1 |
p. 89-91
|
artikel
|
| 35 |
Shallow-impurity-assisted transitions in the course of submillimeter magnetoabsorption of strained Ge/GeSi(111) quantum-well heterostructures
|
Aleshkin, V. Ya.
|
|
2004
|
46 |
1 |
p. 125-129
|
artikel
|
| 36 |
Si/Ge nanostructures for optoelectronics applications
|
Egorov, V. A.
|
|
2004
|
46 |
1 |
p. 49-55
|
artikel
|
| 37 |
Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength
|
Emel’yanov, A. M.
|
|
2004
|
46 |
1 |
p. 40-44
|
artikel
|
| 38 |
Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity
|
Shegai, O. A.
|
|
2004
|
46 |
1 |
p. 74-76
|
artikel
|
| 39 |
Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers
|
Svetlov, S. P.
|
|
2004
|
46 |
1 |
p. 10-12
|
artikel
|
| 40 |
Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters
|
Bolkhovityanov, Yu. B.
|
|
2004
|
46 |
1 |
p. 64-66
|
artikel
|
| 41 |
Temperature dependences of the dielectric properties of lithium-titanium ferrite ceramics
|
Malyshev, A. V.
|
|
2004
|
46 |
1 |
p. 188-191
|
artikel
|
| 42 |
The influence of hydrostatic pressure on the static and dynamic properties of an InSe crystal: A first-principles study
|
Rushchanskii, K. Z.
|
|
2004
|
46 |
1 |
p. 179-187
|
artikel
|
| 43 |
The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system
|
Tetelbaum, D. I.
|
|
2004
|
46 |
1 |
p. 17-21
|
artikel
|
| 44 |
The role of microstructure in luminescent properties of Er-doped nanocrystalline Si thin films
|
Stepikhova, M. V.
|
|
2004
|
46 |
1 |
p. 113-117
|
artikel
|
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