| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 10 nm MOS and its applications
|
Mandal, Jyotsna Kumar
|
|
|
27 |
11 |
p. 4059-4064
|
artikel
|
| 2 |
Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor
|
Jena, M. R.
|
|
|
27 |
11 |
p. 4035-4040
|
artikel
|
| 3 |
Characterization and analysis of low-noise GaN-HEMT based inverter circuits
|
Paul, Sritoma
|
|
|
27 |
11 |
p. 3957-3965
|
artikel
|
| 4 |
Design and performance study on a new biaxial micro-accelerometer with variable cross-section beam
|
Sun, Jianghong
|
|
|
27 |
11 |
p. 4111-4120
|
artikel
|
| 5 |
Development of three-dimensional wafer level chip scale packaging using via last TSV and UV laser releasable temporary bonding technologies
|
Wang, Chengqian
|
|
|
27 |
11 |
p. 4121-4125
|
artikel
|
| 6 |
Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications
|
Basak, A.
|
|
|
27 |
11 |
p. 3995-4005
|
artikel
|
| 7 |
Effect of band non-parabolicity on energy sub-band profile for nano-dimensional MOSFET
|
Mukherjee, Mainak
|
|
|
27 |
11 |
p. 4007-4014
|
artikel
|
| 8 |
Effect of fringing field capacitances in RF and small signal parameters of surrounding gate MOSFET
|
Ray, Ruben
|
|
|
27 |
11 |
p. 4041-4049
|
artikel
|
| 9 |
Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model
|
Deyasi, Arpan
|
|
|
27 |
11 |
p. 3967-3975
|
artikel
|
| 10 |
Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications
|
Chugh, Nisha
|
|
|
27 |
11 |
p. 4065-4072
|
artikel
|
| 11 |
Favorable influence of ssDNA-functionalized SWCNT on the navigation pattern of C. elegans
|
Sinha, Swati
|
|
|
27 |
11 |
p. 4087-4100
|
artikel
|
| 12 |
Foreword: special issue on more than more microsystems
|
Bhushan, Bharat
|
|
|
27 |
11 |
p. 3955
|
artikel
|
| 13 |
Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET
|
Madan, Jaya
|
|
|
27 |
11 |
p. 4073-4085
|
artikel
|
| 14 |
Junctionless double gate non-parabolic variable barrier height Si-MOSFET for energy efficient application
|
Jana, Gargi
|
|
|
27 |
11 |
p. 3987-3994
|
artikel
|
| 15 |
Multicore implementation and performance analysis of a chaos based LSB steganography technique
|
Gambhir, Gaurav
|
|
|
27 |
11 |
p. 4015-4025
|
artikel
|
| 16 |
Noise analysis of double gate composite InAs based HEMTs for high frequency applications
|
Poornachandran, R.
|
|
|
27 |
11 |
p. 4101-4109
|
artikel
|
| 17 |
Performance analysis of gas sensing device and corresponding IoT framework in mines
|
Nath, Subhrapratim
|
|
|
27 |
11 |
p. 3977-3985
|
artikel
|
| 18 |
Preface
|
Mandal, Jyotsna Kumar
|
|
|
27 |
11 |
p. 3953
|
artikel
|
| 19 |
Saliency detection via outlier pursuit in compress domain (SDOPCD)
|
Das, Sujit
|
|
|
27 |
11 |
p. 4051-4057
|
artikel
|
| 20 |
Silicon photovoltaic cell based on graphene oxide as an active layer
|
Mahala, Pramila
|
|
|
27 |
11 |
p. 4027-4033
|
artikel
|
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