| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A High Voltage CMOS Voltage Level Converter for a Low Voltage Process
|
Shubin, V. V.
|
|
|
51 |
3 |
p. 155-163
|
artikel
|
| 2 |
Charge Collection by CMOS Transistors from Tracks of Single Particles Passing through Layer of Shallow Trench Isolation
|
Stenin, V. Ya.
|
|
|
51 |
3 |
p. 181-191
|
artikel
|
| 3 |
Dependence of the X-ray Sensitivity of AgGaS2 Single Crystals on Faces (001) and (100) on Dose and Hardness of Radiation
|
Asadov, S. M.
|
|
|
51 |
3 |
p. 117-125
|
artikel
|
| 4 |
Effect of Discharge Power in a Plasma during Reactive-Ion Etching of Massive Substrates on the Matching of the Lower Electrode with a High-Frequency Bias Generator
|
Poletayev, S. D.
|
|
|
51 |
3 |
p. 144-148
|
artikel
|
| 5 |
Electrophysical Parameters and Emission Spectra of a DC Glow Discharge in the Freon R-23 Medium
|
Murin, D. B.
|
|
|
51 |
3 |
p. 164-169
|
artikel
|
| 6 |
Influence of Anisotropy of Isoenergetic Surface on Electrical Conductivity and the Hall Constant for a Thin Semiconductor Film
|
Kuznetsov, P. A.
|
|
|
51 |
3 |
p. 170-180
|
artikel
|
| 7 |
Monolithic Integrated Circuits Based on Gallium Nitride for Short-Range Radar and Communications in the 22–25 GHz Frequency Range
|
Matveenko, O. S.
|
|
|
51 |
3 |
p. 149-154
|
artikel
|
| 8 |
Nanosized Modification of the Silicon Surface by the Method of Focused Ion Beams
|
Kots, I. N.
|
|
|
51 |
3 |
p. 126-133
|
artikel
|
| 9 |
Structuring Silicon in a High-Frequency Discharge of Freon R-23
|
Dunaev, A. V.
|
|
|
51 |
3 |
p. 139-143
|
artikel
|
| 10 |
Technology for Producing Schottky Contacts Based on an IrSi–Si Composite
|
Aliev, Kh. S.
|
|
|
51 |
3 |
p. 134-138
|
artikel
|
| 11 |
The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors
|
Abdelaaziz Boulgheb,
|
|
|
51 |
3 |
p. 192-198
|
artikel
|
Tijdschrift beschrijving