| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders
|
Starykh, A. A.
|
|
2018
|
47 |
7 |
p. 504-509
|
artikel
|
| 2 |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors
|
Hrapov, M. O.
|
|
2018
|
47 |
7 |
p. 472-478
|
artikel
|
| 3 |
An Integrated High-Capacitance Varicap Based on Porous Silicon
|
Timoshenkov, S. P.
|
|
2018
|
47 |
7 |
p. 465-467
|
artikel
|
| 4 |
Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors
|
Silkin, D. S.
|
|
2018
|
47 |
7 |
p. 468-471
|
artikel
|
| 5 |
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors
|
Razuvaev, Yu. Yu.
|
|
2018
|
47 |
7 |
p. 510-515
|
artikel
|
| 6 |
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications
|
Kravtsova, V. D.
|
|
2018
|
47 |
7 |
p. 455-459
|
artikel
|
| 7 |
Design Automation Technique of Silicon Bandgap Voltage Reference
|
Ivanov, V. G.
|
|
2018
|
47 |
7 |
p. 498-503
|
artikel
|
| 8 |
Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator
|
Usanov, D. A.
|
|
2018
|
47 |
7 |
p. 532-537
|
artikel
|
| 9 |
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators
|
Gruzdov, V. V.
|
|
2018
|
47 |
7 |
p. 526-531
|
artikel
|
| 10 |
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers
|
Vigdorovich, E. N.
|
|
2018
|
47 |
7 |
p. 449-454
|
artikel
|
| 11 |
Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip
|
Gavrilov, S. V.
|
|
2018
|
47 |
7 |
p. 516-521
|
artikel
|
| 12 |
Structural Strength and Temperature Condition of Multi-Chip Modules
|
Pogalov, A. I.
|
|
2018
|
47 |
7 |
p. 460-464
|
artikel
|
| 13 |
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures
|
Petrosyants, K. O.
|
|
2018
|
47 |
7 |
p. 487-493
|
artikel
|
| 14 |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors
|
Korolev, M. A.
|
|
2018
|
47 |
7 |
p. 483-486
|
artikel
|
| 15 |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect
|
Sergeev, V. A.
|
|
2018
|
47 |
7 |
p. 494-497
|
artikel
|
| 16 |
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits
|
Bulakh, D. A.
|
|
2018
|
47 |
7 |
p. 522-525
|
artikel
|
| 17 |
Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices
|
Solov’ev, A. V.
|
|
2018
|
47 |
7 |
p. 479-482
|
artikel
|
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