nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders
|
Starykh, A. A. |
|
2018 |
47 |
7 |
p. 504-509 |
artikel |
2 |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors
|
Hrapov, M. O. |
|
2018 |
47 |
7 |
p. 472-478 |
artikel |
3 |
An Integrated High-Capacitance Varicap Based on Porous Silicon
|
Timoshenkov, S. P. |
|
2018 |
47 |
7 |
p. 465-467 |
artikel |
4 |
Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors
|
Silkin, D. S. |
|
2018 |
47 |
7 |
p. 468-471 |
artikel |
5 |
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors
|
Razuvaev, Yu. Yu. |
|
2018 |
47 |
7 |
p. 510-515 |
artikel |
6 |
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications
|
Kravtsova, V. D. |
|
2018 |
47 |
7 |
p. 455-459 |
artikel |
7 |
Design Automation Technique of Silicon Bandgap Voltage Reference
|
Ivanov, V. G. |
|
2018 |
47 |
7 |
p. 498-503 |
artikel |
8 |
Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator
|
Usanov, D. A. |
|
2018 |
47 |
7 |
p. 532-537 |
artikel |
9 |
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators
|
Gruzdov, V. V. |
|
2018 |
47 |
7 |
p. 526-531 |
artikel |
10 |
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers
|
Vigdorovich, E. N. |
|
2018 |
47 |
7 |
p. 449-454 |
artikel |
11 |
Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip
|
Gavrilov, S. V. |
|
2018 |
47 |
7 |
p. 516-521 |
artikel |
12 |
Structural Strength and Temperature Condition of Multi-Chip Modules
|
Pogalov, A. I. |
|
2018 |
47 |
7 |
p. 460-464 |
artikel |
13 |
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures
|
Petrosyants, K. O. |
|
2018 |
47 |
7 |
p. 487-493 |
artikel |
14 |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors
|
Korolev, M. A. |
|
2018 |
47 |
7 |
p. 483-486 |
artikel |
15 |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect
|
Sergeev, V. A. |
|
2018 |
47 |
7 |
p. 494-497 |
artikel |
16 |
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits
|
Bulakh, D. A. |
|
2018 |
47 |
7 |
p. 522-525 |
artikel |
17 |
Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices
|
Solov’ev, A. V. |
|
2018 |
47 |
7 |
p. 479-482 |
artikel |