| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
|
Gamkrelidze, S. A.
|
|
2017
|
46 |
5 |
p. 323-328
|
article
|
| 2 |
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
|
Orlov, O. M.
|
|
2017
|
46 |
5 |
p. 353-358
|
article
|
| 3 |
Low-noise amplifier for the range of 57–64 GHz with grounding holes through photolake layer
|
Krapukhin, D. V.
|
|
2017
|
46 |
5 |
p. 343-352
|
article
|
| 4 |
Modeling SiO2 leakage currents caused by electrical overloads
|
Polunin, V. A.
|
|
2017
|
46 |
5 |
p. 359-364
|
article
|
| 5 |
Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
|
Pavlov, A. Yu.
|
|
2017
|
46 |
5 |
p. 316-322
|
article
|
| 6 |
Organizing the memory array of multiport register files to reduce power consumption
|
Solovyeva, L. A.
|
|
2017
|
46 |
5 |
p. 334-342
|
article
|
| 7 |
Peculiarities of the energy landscape of a rectangular magnetic nanoisland
|
Trushin, O. S.
|
|
2017
|
46 |
5 |
p. 309-315
|
article
|
| 8 |
Silicide iridium sensors based on solid sensitive elements
|
Kerimov, E. A.
|
|
2017
|
46 |
5 |
p. 329-333
|
article
|
| 9 |
Simulating the chlorine plasma etching profile of high-aspect-ratio trenches in Si
|
Shumilov, A. S.
|
|
2017
|
46 |
5 |
p. 301-308
|
article
|
| 10 |
Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors
|
Elesin, V. V.
|
|
2017
|
46 |
5 |
p. 365-369
|
article
|
Journal description