| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters
|
Smirnov, I. S.
|
|
2014
|
43 |
8 |
p. 587-589
|
artikel
|
| 2 |
Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution
|
Voitsekhovskii, A. V.
|
|
2014
|
43 |
8 |
p. 552-558
|
artikel
|
| 3 |
Formation and structure of mesoporous silicon
|
Kargin, N. I.
|
|
2014
|
43 |
8 |
p. 531-535
|
artikel
|
| 4 |
Formation of bidomain structure in lithium niobate plates by the stationary external heating method
|
Bykov, A. S.
|
|
2014
|
43 |
8 |
p. 536-542
|
artikel
|
| 5 |
Formation of ferroelectic domain stuctures in LiTaO3 crystals formed by direct electron-beam repolarization
|
Roschupkin, D. V.
|
|
2014
|
43 |
8 |
p. 543-545
|
artikel
|
| 6 |
Impurity accumulation in an adsorption layer during MBE doping
|
Hervieu, Yu. Yu.
|
|
2014
|
43 |
8 |
p. 519-525
|
artikel
|
| 7 |
Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method
|
Mazalov, A. V.
|
|
2014
|
43 |
8 |
p. 565-568
|
artikel
|
| 8 |
Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by their charge trap
|
Manyakhin, F. I.
|
|
2014
|
43 |
8 |
p. 581-586
|
artikel
|
| 9 |
New hybrid materials for organic light-emitting diode devices
|
Avetisov, R. I.
|
|
2014
|
43 |
8 |
p. 526-530
|
artikel
|
| 10 |
On the temperature dependence of silicon quantum dot photoluminescence
|
Nagornykh, S. N.
|
|
2014
|
43 |
8 |
p. 575-580
|
artikel
|
| 11 |
Photoelectric converters in a system with spectral splitting of the solar energy
|
Kurin, S. Yu.
|
|
2014
|
43 |
8 |
p. 559-564
|
artikel
|
| 12 |
Statistical analysis of germanium influence on radiation and thermal stability of the n-p-n-p device structures based on CZ-Si〈P,Ge〉 electrophysical properties
|
Bytkin, S. V.
|
|
2014
|
43 |
8 |
p. 546-551
|
artikel
|
| 13 |
Technological features of the formation of transparent conductive contacts of ITO film for LEDs based on gallium nitride
|
Vanyukhin, K. D.
|
|
2014
|
43 |
8 |
p. 569-574
|
artikel
|
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