no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters
|
Smirnov, I. S. |
|
2014 |
43 |
8 |
p. 587-589 |
article |
2 |
Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution
|
Voitsekhovskii, A. V. |
|
2014 |
43 |
8 |
p. 552-558 |
article |
3 |
Formation and structure of mesoporous silicon
|
Kargin, N. I. |
|
2014 |
43 |
8 |
p. 531-535 |
article |
4 |
Formation of bidomain structure in lithium niobate plates by the stationary external heating method
|
Bykov, A. S. |
|
2014 |
43 |
8 |
p. 536-542 |
article |
5 |
Formation of ferroelectic domain stuctures in LiTaO3 crystals formed by direct electron-beam repolarization
|
Roschupkin, D. V. |
|
2014 |
43 |
8 |
p. 543-545 |
article |
6 |
Impurity accumulation in an adsorption layer during MBE doping
|
Hervieu, Yu. Yu. |
|
2014 |
43 |
8 |
p. 519-525 |
article |
7 |
Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method
|
Mazalov, A. V. |
|
2014 |
43 |
8 |
p. 565-568 |
article |
8 |
Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by their charge trap
|
Manyakhin, F. I. |
|
2014 |
43 |
8 |
p. 581-586 |
article |
9 |
New hybrid materials for organic light-emitting diode devices
|
Avetisov, R. I. |
|
2014 |
43 |
8 |
p. 526-530 |
article |
10 |
On the temperature dependence of silicon quantum dot photoluminescence
|
Nagornykh, S. N. |
|
2014 |
43 |
8 |
p. 575-580 |
article |
11 |
Photoelectric converters in a system with spectral splitting of the solar energy
|
Kurin, S. Yu. |
|
2014 |
43 |
8 |
p. 559-564 |
article |
12 |
Statistical analysis of germanium influence on radiation and thermal stability of the n-p-n-p device structures based on CZ-Si〈P,Ge〉 electrophysical properties
|
Bytkin, S. V. |
|
2014 |
43 |
8 |
p. 546-551 |
article |
13 |
Technological features of the formation of transparent conductive contacts of ITO film for LEDs based on gallium nitride
|
Vanyukhin, K. D. |
|
2014 |
43 |
8 |
p. 569-574 |
article |