| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures
|
Rudakov, V. I.
|
|
2011
|
40 |
6 |
p. 389-394
|
artikel
|
| 2 |
Determination of the size of vacancy-type defects in angstrom ranges by positron annihilation spectroscopy
|
Grafutin, V. I.
|
|
2011
|
40 |
6 |
p. 428-435
|
artikel
|
| 3 |
Electrical parameters and the plasma composition in HCl-H2 mixtures
|
Efremov, A. M.
|
|
2011
|
40 |
6 |
p. 371-378
|
artikel
|
| 4 |
Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering
|
Rudakov, V. I.
|
|
2011
|
40 |
6 |
p. 383-388
|
artikel
|
| 5 |
Institute for design problems in microelectronics, Russian Academy of Sciences (IPPM RAS), Moscow, Russia
|
|
|
2011
|
40 |
6 |
p. 369-370
|
artikel
|
| 6 |
Low-temperature pulsed vapor-phase deposition of thin layers of metal ruthenium for micro- and nanoelectronics. Part 5. Interrelation of growth regularities, structure, and properties of ruthenium layers
|
Vasilyev, V. Yu.
|
|
2011
|
40 |
6 |
p. 403-413
|
artikel
|
| 7 |
Optical maskless lithography
|
Belokopytov, G. V.
|
|
2011
|
40 |
6 |
p. 414-427
|
artikel
|
| 8 |
Scanning electron microscopy used to measure the feature dimensions of a nanoscale test pattern on a silicon surface
|
Gavrilenko, V. P.
|
|
2011
|
40 |
6 |
p. 436-440
|
artikel
|
| 9 |
Spectral study of HCl plasma etching of gallium arsenide
|
Dunaev, A. V.
|
|
2011
|
40 |
6 |
p. 379-382
|
artikel
|
| 10 |
Wave phenomena in the finishing of diamond crystals
|
Pintus, S. M.
|
|
2011
|
40 |
6 |
p. 395-402
|
artikel
|
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