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                             8 results found
no title author magazine year volume issue page(s) type
1 CMOS logic elements with increased failure resistance to single-event upsets Ol’chev, S. I.
2011
40 3 p. 156-169
article
2 Electrothermal behavior of the elements of SOS CMOS chips Gerasimchuk, O. A.
2011
40 3 p. 215-224
article
3 Evaluation of resistance of CMOS LSIC to the factor of absorbed dose under the pulsed radiation effect Sogoyan, A. V.
2011
40 3 p. 185-193
article
4 Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation Sogoyan, A. V.
2011
40 3 p. 194-208
article
5 Influence of implantation of silicon and oxygen ions into a heteroepitaxial silicon layer on a sapphire substrate on the leakage currents of n-channel transistors of CMOS IC SOS technology Chistilin, A. A.
2011
40 3 p. 209-214
article
6 Interrelation of equivalent values for linear energy transfer of heavy charged particles and the energy of focused laser radiation Chumakov, A. I.
2011
40 3 p. 149-155
article
7 Memory-cell layout as a factor in the single-event-upset susceptibility of submicron dice CMOS SRAM Stenin, V. Ya.
2011
40 3 p. 170-175
article
8 Modeling of recombination in SiO2 under the effect of ionizing radiation by the Monte Carlo method Polunin, V. A.
2011
40 3 p. 176-184
article
                             8 results found
 
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