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                             33 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions Q. W. Ren
 2001
 12 4 p. 313-316
4 p.
 artikel
2 An electron paramagnetic resonance study of defects in PECVD silicon oxides R. C. Barklie
 2001
 12 4 p. 231-234
4 p.
 artikel
3 Antimony and boron diffusion in SiGe and Si under the influence of injected point defects J. M. Bonar
 2001
 12 4 p. 219-221
3 p.
 artikel
4 Band offsets and electron transport calculation for strained \hbox{Si}_{1-x-y}\hbox{Ge}_{x}\hbox{C}_{y}/Si heterostructures P. Dollfus
 2001
 12 4 p. 245-248
4 p.
 artikel
5 Characterization of CVD tungsten deposited by silane reduction M. F. Bain
 2001
 12 4 p. 327-331
5 p.
 artikel
6 CV, DLTS and conductance transient characterization of \hbox{SiN}_{x}\,{\bf:}\,\hbox{H/InP} interface improved by \hbox{N}_{2} remote plasma cleaning of the InP surface H. Castán
 2001
 12 4 p. 263-267
5 p.
 artikel
7 Dielectric properties of thin solid films formed on silicon P. C. Fannin
 2001
 12 4 p. 347-350
4 p.
 artikel
8 Dislocation behavior in highly impurity-doped Si I. Yonenaga
 2001
 12 4 p. 285-288
4 p.
 artikel
9 DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films S. Dueñas
 2001
 12 4 p. 317-321
5 p.
 artikel
10 Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure V. V. Emtsev Jr
 2001
 12 4 p. 223-225
3 p.
 artikel
11 Editorial for Journal of Materials Science: Materials in Electronics Arthur Willoughby
 2001
 12 4 p. 5-5
1 p.
 artikel
12 Effect of nitridation on FowlerNordheim tunneling coefficients in \hbox{SiO}_{2} MOS capacitors with \hbox{WSi}_{2}-polysilicon gate S. Croci
 2001
 12 4 p. 333-338
6 p.
 artikel
13 Electrical and structural characterization of DLC films deposited by magnetron sputtering M. Massi
 2001
 12 4 p. 343-346
4 p.
 artikel
14 Electrical characterization of deep levels in N and P 6H-SiC Schottky diodes N. Sghaier
 2001
 12 4 p. 273-276
4 p.
 artikel
15 Electrical characterization of shallow cobalt-silicided junctions E. Simoen
 2001
 12 4 p. 207-210
4 p.
 artikel
16 Electrical detection and simulation of stress in silicon nitride spacer technology H. W. van Zeijl
 2001
 12 4 p. 339-341
3 p.
 artikel
17 Evaluation of the infrared absorption in nm-thick heavily boron-doped \hbox{Si}_{1-x}\hbox{Ge}_{x} layers on silicon A. Cavaco
 2001
 12 4 p. 241-243
3 p.
 artikel
18 Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy D. Lowney
 2001
 12 4 p. 249-253
5 p.
 artikel
19 Fully relaxed \hbox{Si}_{0.7}\hbox{Ge}_{0.3} buffers grown on patterned silicon substrates for hetero-CMOS transistors G. Wöhl
 2001
 12 4 p. 235-240
6 p.
 artikel
20 Growth and characterization of shape memory alloy thin films for Si microactuator technologies N. Yaakoubi
 2001
 12 4 p. 323-326
4 p.
 artikel
21 High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers J. F. Woitok
 2001
 12 4 p. 295-298
4 p.
 artikel
22 LPCVD of tungsten by selective deposition on silicon F. X. Li
 2001
 12 4 p. 303-306
4 p.
 artikel
23 Magnetic nanoparticles and nanoparticle assemblies from metallorganic precursors Y. K. Gunko
 2001
 12 4 p. 299-302
4 p.
 artikel
24 Novel fabrication methods for submicrometer Josephson junction qubits A. Potts
 2001
 12 4 p. 289-293
5 p.
 artikel
25 Novel materials for thermal via incorporation into SOI structures P. Baine
 2001
 12 4 p. 215-218
4 p.
 artikel
26 Optical characterization of ZnO C. Gaspar
 2001
 12 4 p. 269-271
3 p.
 artikel
27 Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS L. Grau
 2001
 12 4 p. 211-214
4 p.
 artikel
28 Radiation damage of N-MOSFETS fabricated in a BiCMOS process K. Kobayashi
 2001
 12 4 p. 227-230
4 p.
 artikel
29 Raman active \hbox{E}_{2} modes in aluminum nitride films I. C. Oliveira
 2001
 12 4 p. 259-262
4 p.
 artikel
30 Spectroscopic characteristics of SiO and \hbox{SiO}_{2} solid films: Assignment and local field effect influence I. I. Shaganov
 2001
 12 4 p. 351-355
5 p.
 artikel
31 Studies of the formation of Ga and Al wires on Si(1 1 2) facet surfaces S. M. Prokes
 2001
 12 4 p. 277-283
7 p.
 artikel
32 Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing B. H. W. Toh
 2001
 12 4 p. 307-312
6 p.
 artikel
33 Tunneling statistics and the manufacturability of semiconductor tunnel devices R. K. Hayden
 2001
 12 4 p. 255-257
3 p.
 artikel
                             33 gevonden resultaten
 
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