| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate Deterministic Numerical Simulation of p-n Junctions
|
González, P.
|
|
2004
|
3 |
3-4 |
p. 235-238
|
artikel
|
| 2 |
A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability
|
Kufluoglu, Haldun
|
|
2004
|
3 |
3-4 |
p. 165-169
|
artikel
|
| 3 |
A Critical Examination of the Basis of Macroscopic Quantum Transport Approaches
|
Narayanan, Venkat
|
|
2004
|
3 |
3-4 |
p. 435-438
|
artikel
|
| 4 |
A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations
|
Zorman, Barry
|
|
2004
|
3 |
3-4 |
p. 351-354
|
artikel
|
| 5 |
A Legendre Polynomial Solver for the Langevin Boltzmann Equation
|
Jungemann, Christoph
|
|
2004
|
3 |
3-4 |
p. 157-160
|
artikel
|
| 6 |
Analysis of Strained-Si Device including Quantum Effect
|
Tanabe, Ryo
|
|
2004
|
3 |
3-4 |
p. 387-391
|
artikel
|
| 7 |
Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors
|
Iannaccone, G.
|
|
2004
|
3 |
3-4 |
p. 199-202
|
artikel
|
| 8 |
An Efficient Monte Carlo Procedure for Studying Hole Transport in Doped Semiconductors
|
Gómez-campos, F. M.
|
|
2004
|
3 |
3-4 |
p. 329-332
|
artikel
|
| 9 |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices
|
Grasser, Tibor
|
|
2004
|
3 |
3-4 |
p. 183-187
|
artikel
|
| 10 |
A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
|
Li, Yiming
|
|
2004
|
3 |
3-4 |
p. 257-261
|
artikel
|
| 11 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
|
Obradovic, Borna
|
|
2004
|
3 |
3-4 |
p. 161-164
|
artikel
|
| 12 |
A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures
|
Knezevic, Irena
|
|
2004
|
3 |
3-4 |
p. 359-362
|
artikel
|
| 13 |
A Quantum Mechanical Approach for the Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
|
Wang, Jing
|
|
2004
|
3 |
3-4 |
p. 453-457
|
artikel
|
| 14 |
Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples
|
Laux, S. E.
|
|
2004
|
3 |
3-4 |
p. 379-385
|
artikel
|
| 15 |
A Self-Consistent Event Biasing Scheme for Statistical Enhancement
|
Nedjalkov, M.
|
|
2004
|
3 |
3-4 |
p. 305-309
|
artikel
|
| 16 |
Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism
|
Guo, Jing
|
|
2004
|
3 |
3-4 |
p. 373-377
|
artikel
|
| 17 |
3D Electrostatics of Carbon Nanotube Field-Effect Transistors
|
Neophytou, Neophytos
|
|
2004
|
3 |
3-4 |
p. 277-280
|
artikel
|
| 18 |
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron noise in Si Devices
|
Dollfus, P.
|
|
2004
|
3 |
3-4 |
p. 311-315
|
artikel
|
| 19 |
Editorial
|
Lundstrom, Mark
|
|
2004
|
3 |
3-4 |
p. 147
|
artikel
|
| 20 |
Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
|
Rahman, Anisur
|
|
2004
|
3 |
3-4 |
p. 281-285
|
artikel
|
| 21 |
Efficient Memory Management for Cellular Monte Carlo Algorithm
|
Branlard, J.
|
|
2004
|
3 |
3-4 |
p. 323-327
|
artikel
|
| 22 |
Evolution of Current Transport Models for Engineering Applications
|
Gehring, Andreas
|
|
2004
|
3 |
3-4 |
p. 149-155
|
artikel
|
| 23 |
Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues
|
Gilbert, M. J.
|
|
2004
|
3 |
3-4 |
p. 355-358
|
artikel
|
| 24 |
High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices
|
Macucci, M.
|
|
2004
|
3 |
3-4 |
p. 429-433
|
artikel
|
| 25 |
Influence of Ballistic Effects in Ultra-Small MOSFETs
|
Martin, J. Saint
|
|
2004
|
3 |
3-4 |
p. 207-210
|
artikel
|
| 26 |
Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study
|
Adamu-Lema, Fikru
|
|
2004
|
3 |
3-4 |
p. 203-206
|
artikel
|
| 27 |
Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results
|
Liu, Yunxian
|
|
2004
|
3 |
3-4 |
p. 263-267
|
artikel
|
| 28 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
|
Hagenbeck, R.
|
|
2004
|
3 |
3-4 |
p. 239-242
|
artikel
|
| 29 |
Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation
|
Khan, Hasanur R.
|
|
2004
|
3 |
3-4 |
p. 337-340
|
artikel
|
| 30 |
Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires
|
Frederiksen, Thomas
|
|
2004
|
3 |
3-4 |
p. 423-427
|
artikel
|
| 31 |
Modeling of Transport Through Submicron Semiconductor Structures: A Direct Solution to the Coupled Poisson-Boltzmann Equations
|
Csontos, D.
|
|
2004
|
3 |
3-4 |
p. 215-219
|
artikel
|
| 32 |
Modelling of Quantum Electromechanical Systems
|
Jauho, Antti-Pekka
|
|
2004
|
3 |
3-4 |
p. 367-371
|
artikel
|
| 33 |
Monte Carlo Simulation of Carbon Nanotube Devices
|
Hasan, Sayed
|
|
2004
|
3 |
3-4 |
p. 333-336
|
artikel
|
| 34 |
Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
|
Gámiz, F.
|
|
2004
|
3 |
3-4 |
p. 295-298
|
artikel
|
| 35 |
Multi-Dimensional Tunneling in Density-Gradient Theory
|
Ancona, M. G.
|
|
2004
|
3 |
3-4 |
p. 189-192
|
artikel
|
| 36 |
Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors
|
Okamoto, M.
|
|
2004
|
3 |
3-4 |
p. 439-442
|
artikel
|
| 37 |
Parallel Algorithms for Large-Scale Nanoelectronics Simulations Using NESSIE
|
Polizzi, Eric
|
|
2004
|
3 |
3-4 |
p. 363-366
|
artikel
|
| 38 |
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AlGaN/GaN HEMTs
|
Yamakawa, Shinya
|
|
2004
|
3 |
3-4 |
p. 299-303
|
artikel
|
| 39 |
Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures
|
Sakai, Atsushi
|
|
2004
|
3 |
3-4 |
p. 449-452
|
artikel
|
| 40 |
Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices
|
Andrei, Petru
|
|
2004
|
3 |
3-4 |
p. 211-214
|
artikel
|
| 41 |
Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics
|
Lee, Angelica
|
|
2004
|
3 |
3-4 |
p. 247-250
|
artikel
|
| 42 |
RF Performance of Strained SiGe pMOSFETs: Linearity and Gain
|
Ma, Wei
|
|
2004
|
3 |
3-4 |
p. 269-272
|
artikel
|
| 43 |
Robust Computational Models of Quantum Transport in Electronic Devices
|
Fedoseyev, A. I.
|
|
2004
|
3 |
3-4 |
p. 231-234
|
artikel
|
| 44 |
Scaling pFET Hot-Electron Injection
|
Duffy, Chris
|
|
2004
|
3 |
3-4 |
p. 227-230
|
artikel
|
| 45 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study
|
Riddet, C.
|
|
2004
|
3 |
3-4 |
p. 341-345
|
artikel
|
| 46 |
Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors
|
Li, Yiming
|
|
2004
|
3 |
3-4 |
p. 251-255
|
artikel
|
| 47 |
Simulation of Entanglement Dynamics for Scattering Between a Free and a Bound Carrier in a Quantum Wire
|
Bordone, Paolo
|
|
2004
|
3 |
3-4 |
p. 407-410
|
artikel
|
| 48 |
Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System
|
Domaingo, Andreas
|
|
2004
|
3 |
3-4 |
p. 221-225
|
artikel
|
| 49 |
Simulation Schemes in 2D Nanoscale MOSFETs: A WKB Based Method
|
Negulescu, C.
|
|
2004
|
3 |
3-4 |
p. 397-400
|
artikel
|
| 50 |
Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks
|
Yang, L.
|
|
2004
|
3 |
3-4 |
p. 171-175
|
artikel
|
| 51 |
Single Electron Transport and Entanglement Induced by Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires
|
Rosini, Marcello
|
|
2004
|
3 |
3-4 |
p. 443-447
|
artikel
|
| 52 |
Smart Dust: Monte Carlo Simulation of Self-Organised Transport
|
Barker, John
|
|
2004
|
3 |
3-4 |
p. 317-321
|
artikel
|
| 53 |
Spectral Element Method for the Schrödinger-Poisson System
|
Cheng, Candong
|
|
2004
|
3 |
3-4 |
p. 417-421
|
artikel
|
| 54 |
Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon
|
Matsuda, Kazunori
|
|
2004
|
3 |
3-4 |
p. 273-276
|
artikel
|
| 55 |
Subthreshold Mobility Extraction for SOI-MESFETs
|
Tarik, K.
|
|
2004
|
3 |
3-4 |
p. 243-246
|
artikel
|
| 56 |
TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade
|
Giles, Martin D.
|
|
2004
|
3 |
3-4 |
p. 177-182
|
artikel
|
| 57 |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1−x Gex Dual Channel pMOSFETs on (001) Relaxed Si1−y Gey
|
Nguyen, C. D.
|
|
2004
|
3 |
3-4 |
p. 193-197
|
artikel
|
| 58 |
The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation
|
Wu, Bo
|
|
2004
|
3 |
3-4 |
p. 347-350
|
artikel
|
| 59 |
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and Mainstream VLSI Technology
|
Fischetti, M. V.
|
|
2004
|
3 |
3-4 |
p. 287-293
|
artikel
|
| 60 |
Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green’s Function Formalism
|
Bescond, Marc
|
|
2004
|
3 |
3-4 |
p. 393-396
|
artikel
|
| 61 |
Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation
|
Barker, John R.
|
|
2004
|
3 |
3-4 |
p. 401-405
|
artikel
|
| 62 |
Wigner Function for Identical Particles
|
Cancellieri, E.
|
|
2004
|
3 |
3-4 |
p. 411-415
|
artikel
|
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