| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A DFT investigation of Sc-based perovskite-type hydrides XScH3 (X = K, Na) for hydrogen storage application
|
Shabbir, Huma
|
|
|
23 |
6 |
p. 1238-1248
|
artikel
|
| 2 |
Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes
|
Acharyya, Shiladitya
|
|
|
23 |
6 |
p. 1170-1194
|
artikel
|
| 3 |
A nanoelectromechanical energy-reversible switch: theoretical study and verification by experiment of its applicability to adiabatic computing
|
Mayet, Abdulilah M.
|
|
|
23 |
6 |
p. 1438-1447
|
artikel
|
| 4 |
A semi-classical Floquet-NEGF approach to model photon-assisted tunneling in quantum well devices
|
De Sutter, Nathan
|
|
|
23 |
6 |
p. 1148-1161
|
artikel
|
| 5 |
A simulation study of electrostatically doped silicene and graphene nanoribbon FETs
|
Gooran-Shoorakchaly, Armin
|
|
|
23 |
6 |
p. 1315-1324
|
artikel
|
| 6 |
Chaotic computing cell based on nanostructured phase-change materials
|
Nevzorov, A. A.
|
|
|
23 |
6 |
p. 1448-1454
|
artikel
|
| 7 |
Characteristic analysis of a line-touch mode capacitive pressure-sensitive structure
|
Chuai, Rongyan
|
|
|
23 |
6 |
p. 1431-1437
|
artikel
|
| 8 |
Conductance characteristics of naphthopyran as a light-sensitive molecular optical junction: a joint NEGF-DFT and TD-DFT study
|
Darugar, Vahidreza
|
|
|
23 |
6 |
p. 1306-1314
|
artikel
|
| 9 |
Dual injection enhanced super junction TIGBT with narrow mesa and floating-P region
|
Zhang, Jinping
|
|
|
23 |
6 |
p. 1345-1354
|
artikel
|
| 10 |
Effects of negative hydroxyl ions at the SnO2/perovskite layer interface on the performance of perovskite solar cells
|
Banihashemi, Mehdi
|
|
|
23 |
6 |
p. 1162-1169
|
artikel
|
| 11 |
Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model
|
Omar, Eman
|
|
|
23 |
6 |
p. 1455-1472
|
artikel
|
| 12 |
Enhanced thermoelectric performance of Zr1−xNiSnTax half-Heusler alloys: a first-principle study
|
Cao, Di
|
|
|
23 |
6 |
p. 1209-1216
|
artikel
|
| 13 |
Enhancing dye sensitized solar cells performance through quinoxaline based organic dye sensitizers
|
Diany, Rajaa
|
|
|
23 |
6 |
p. 1195-1208
|
artikel
|
| 14 |
Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature
|
Baymatov, P. J.
|
|
|
23 |
6 |
p. 1292-1297
|
artikel
|
| 15 |
Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics
|
Biswas, Debaleen
|
|
|
23 |
6 |
p. 1368-1379
|
artikel
|
| 16 |
Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector
|
Jaiswal, S. N.
|
|
|
23 |
6 |
p. 1325-1336
|
artikel
|
| 17 |
Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application
|
Chanchal,
|
|
|
23 |
6 |
p. 1337-1344
|
artikel
|
| 18 |
Low-profile MIMO antenna for sub-6G smartphone applications with minimal footprint: an SVM-guided approach
|
Potti, Devisowjanya
|
|
|
23 |
6 |
p. 1402-1412
|
artikel
|
| 19 |
Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory
|
Ćalasan, Martin
|
|
|
23 |
6 |
p. 1137-1147
|
artikel
|
| 20 |
Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors
|
Goyal, Monika
|
|
|
23 |
6 |
p. 1284-1291
|
artikel
|
| 21 |
On efficient modeling of drain current for designing high-power GaN HEMT-based circuits
|
Jarndal, Anwar
|
|
|
23 |
6 |
p. 1355-1367
|
artikel
|
| 22 |
Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM
|
Yin, Yifei
|
|
|
23 |
6 |
p. 1380-1390
|
artikel
|
| 23 |
Study of the ISO-FDTD algorithm for processing higher-order dielectric function in SF-FDTD
|
Gu, Ke-Da
|
|
|
23 |
6 |
p. 1391-1401
|
artikel
|
| 24 |
Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate
|
Cao, Rongxing
|
|
|
23 |
6 |
p. 1298-1305
|
artikel
|
| 25 |
Systematic analysis of lead-free halide K2SnX6 (X = Cl, Br, I) double perovskites for solar cell applications
|
Habib, Huma
|
|
|
23 |
6 |
p. 1262-1283
|
artikel
|
| 26 |
Theoretical prediction of the mechanical, electronic, optical and thermodynamic properties of antiperovskites A3BO (A = K, Rb and B = Au, Br) using DFT scheme: new candidate for optoelectronic devices application
|
Uddin, Salah
|
|
|
23 |
6 |
p. 1217-1237
|
artikel
|
| 27 |
TiCoSb Heusler alloy-based magnetic tunnel junction for efficient computing in memory architecture
|
Alisha, P. B.
|
|
|
23 |
6 |
p. 1249-1261
|
artikel
|
| 28 |
Tuning the optoelectronic properties of PtS2/PtSe2 heterostructure via strain engineering
|
Zhao, Yanshen
|
|
|
23 |
6 |
p. 1413-1422
|
artikel
|
| 29 |
UTC-PD's optoelectronic mixing principle and optimal working condition
|
Ye, Jihong
|
|
|
23 |
6 |
p. 1423-1430
|
artikel
|
Tijdschrift beschrijving