nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A 3D analytical modeling of tri-gate tunneling field-effect transistors
|
Marjani, Saeid |
|
2016 |
15 |
3 |
p. 820-830 |
artikel |
2 |
A Gaussian model for recombination via carrier-trap distributions in organic solar cells
|
Hernández-García, L. F. |
|
2016 |
15 |
3 |
p. 1103-1109 |
artikel |
3 |
Analog and RF performance of doping-less tunnel FETs with $$\hbox {Si}_{0.55} \hbox {Ge}_{0.45}$$Si0.55Ge0.45 source
|
Anand, Sunny |
|
2016 |
15 |
3 |
p. 850-856 |
artikel |
4 |
Analysis of external quantum efficiency and conversion efficiency of thin crystalline silicon solar cells with textured front surface
|
Bougoffa, Amira |
|
2016 |
15 |
3 |
p. 1085-1094 |
artikel |
5 |
Analysis of independent gate operation in Si nano tube FET and threshold prediction model using 3D numerical simulation
|
Ambika, R. |
|
2016 |
15 |
3 |
p. 778-786 |
artikel |
6 |
An improved CMOS-based inductor simulator with simplified structure for low-frequency applications
|
Zhong, Longjie |
|
2016 |
15 |
3 |
p. 1017-1022 |
artikel |
7 |
An optical absorption model including absorber saturation
|
Auf der Maur, Matthias |
|
2016 |
15 |
3 |
p. 1064-1070 |
artikel |
8 |
A novel laminated gate to improve the ON-state resistance of LDMOS transistors
|
Pak, Amin |
|
2016 |
15 |
3 |
p. 1071-1076 |
artikel |
9 |
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
|
Rupp, K. |
|
2016 |
15 |
3 |
p. 939-958 |
artikel |
10 |
Comparative performance analysis of InGaN/GaN multi-quantum-well light-emitting diodes with p- and n-type step-doped barriers
|
Singh, Sumitra |
|
2016 |
15 |
3 |
p. 1040-1045 |
artikel |
11 |
Delta-doped tunnel FET (D-TFET) to improve current ratio ($$I_\mathrm{ON}/I_\mathrm{OFF}$$ION/IOFF) and ON-current performance
|
Panda, S. |
|
2016 |
15 |
3 |
p. 857-864 |
artikel |
12 |
Design of ultrafast all-optical pulsed-mode 2 $$\times $$× 2 crossbar switch using quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometer
|
Kastritsis, Dimitris |
|
2016 |
15 |
3 |
p. 1046-1063 |
artikel |
13 |
Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling
|
Hakim, M. M. A. |
|
2016 |
15 |
3 |
p. 839-849 |
artikel |
14 |
Dual-material double-gate tunnel FET: gate threshold voltage modeling and extraction
|
Noor, Samantha Lubaba |
|
2016 |
15 |
3 |
p. 763-769 |
artikel |
15 |
Effect of mobility and band structure of hole transport layer in planar heterojunction perovskite solar cells using 2D TCAD simulation
|
Alnuaimi, Aaesha |
|
2016 |
15 |
3 |
p. 1110-1118 |
artikel |
16 |
Empirical transport model of strained CNT transistors used for sensor applications
|
Wagner, Christian |
|
2016 |
15 |
3 |
p. 881-890 |
artikel |
17 |
Energy gap renormalization and diamagnetic susceptibility in quantum wires with different cross-sectional shape
|
Avazzadeh, Z. |
|
2016 |
15 |
3 |
p. 931-938 |
artikel |
18 |
Erratum to: Sensitive DNA detection based on the capacitance properties of graphene
|
Khadempar, Nahid |
|
2016 |
15 |
3 |
p. 910 |
artikel |
19 |
Evaluation of a transfer function model using experimental data and numerical analysis: the case of a pyroelectric sensor
|
Sifi, Nejmeddine |
|
2016 |
15 |
3 |
p. 1003-1016 |
artikel |
20 |
First-principles simulation of oxygen vacancy migration in $$\hbox {HfO}_{ x}$$HfOx, $$\hbox {CeO}_{ x}$$CeOx, and at their interfaces for applications in resistive random-access memories
|
Bhatti, Aqyan A. |
|
2016 |
15 |
3 |
p. 741-748 |
artikel |
21 |
FP-LAPW study of energy bands and optical properties of the filled skutterudite $$\hbox {CeRu}_{4}\hbox {As}_{12}$$CeRu4As12 with spin–orbit coupling
|
Shankar, A. |
|
2016 |
15 |
3 |
p. 721-728 |
artikel |
22 |
High-performance multiplexer architecture for quantum-dot cellular automata
|
Rashidi, Hamid |
|
2016 |
15 |
3 |
p. 968-981 |
artikel |
23 |
Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE
|
Di, Shaoyan |
|
2016 |
15 |
3 |
p. 770-777 |
artikel |
24 |
Investigation of trigate JLT with dual-k sidewall spacers for enhanced analog/RF FOMs
|
Saini, Gaurav |
|
2016 |
15 |
3 |
p. 865-873 |
artikel |
25 |
Joint defect- and variation-aware logic mapping of multi-outputs crossbar-based nanoarchitectures
|
Ghavami, Behnam |
|
2016 |
15 |
3 |
p. 959-967 |
artikel |
26 |
Magnetocaloric effect in NdSi compound: a Monte Carlo simulation
|
Masrour, R. |
|
2016 |
15 |
3 |
p. 749-755 |
artikel |
27 |
Manipulation of structural and optical behaviors in zincblende and wurtzite mercuric sulfide (HgS) nanocrystals: atomistic tight-binding theory
|
Sukkabot, Worasak |
|
2016 |
15 |
3 |
p. 756-762 |
artikel |
28 |
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach
|
Ruić, Dino |
|
2016 |
15 |
3 |
p. 809-819 |
artikel |
29 |
Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applications
|
Orouji, Ali A. |
|
2016 |
15 |
3 |
p. 1077-1084 |
artikel |
30 |
On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale $$\mathrm{TiO}_2$$TiO2 thin-film memristor device
|
Nguyen, Van Ha |
|
2016 |
15 |
3 |
p. 993-1002 |
artikel |
31 |
Optimization of saddle junctionless FETs for extreme high integration
|
Jin, Xiaoshi |
|
2016 |
15 |
3 |
p. 801-808 |
artikel |
32 |
Performance analysis of uniaxially strained monolayer black phosphorus and blue phosphorus n-MOSFET and p-MOSFET
|
Banerjee, L. |
|
2016 |
15 |
3 |
p. 919-930 |
artikel |
33 |
Performance evaluation of micromachined fabricated multiband horn-shaped slotted patch antenna
|
Arora, Rajat |
|
2016 |
15 |
3 |
p. 1028-1039 |
artikel |
34 |
Prior knowledge input neural network method for GFET description
|
Zhang, Ji |
|
2016 |
15 |
3 |
p. 911-918 |
artikel |
35 |
Role of annealing temperature in the oxide charge distribution in high-$$\kappa $$κ-based MOS devices: simulation and experiment
|
Biswas, Debaleen |
|
2016 |
15 |
3 |
p. 795-800 |
artikel |
36 |
Sensitive DNA detection based on the capacitance properties of graphene
|
Khadempar, Nahid |
|
2016 |
15 |
3 |
p. 898-909 |
artikel |
37 |
Series and parallel resistance effects on the C–V and G–V characteristics of $$\mathrm{Al}/\mathrm{SiO}_{2}$$Al/SiO2/Si structure
|
Rejaiba, Omar |
|
2016 |
15 |
3 |
p. 831-838 |
artikel |
38 |
Simplified numerical simulation of organic photovoltaic devices
|
Kim, Chang-Hyun |
|
2016 |
15 |
3 |
p. 1095-1102 |
artikel |
39 |
Simultaneous all-optical basic arithmetic operations using QD-SOA-assisted Mach–Zehnder interferometer
|
Gayen, Dilip Kumar |
|
2016 |
15 |
3 |
p. 982-992 |
artikel |
40 |
Spectroscopic and structural study of adsorption of benzene on silver using DFT
|
Rekha, T. N. |
|
2016 |
15 |
3 |
p. 729-740 |
artikel |
41 |
Strong correlation effects in the (5,5)@(10,10) double-walled carbon nanotubes in the framework of the t–J model
|
Rostampour, E. |
|
2016 |
15 |
3 |
p. 874-880 |
artikel |
42 |
Tuning electronic transport of zigzag graphene nanoribbons by ordered B or N atom doping
|
Wang, Lihua |
|
2016 |
15 |
3 |
p. 891-897 |
artikel |
43 |
Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET
|
Hosseini, Reza |
|
2016 |
15 |
3 |
p. 787-794 |
artikel |
44 |
Utilization of double metal–dielectric composite substrates for microwave miniaturization of rectangular patch antennas
|
Rybin, Oleg |
|
2016 |
15 |
3 |
p. 1023-1027 |
artikel |