| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications
|
Murugapandiyan, P.
|
|
|
177 |
C |
p.
|
artikel
|
| 2 |
Bending effect on the energy of a particle in a semiconductor nanobelt
|
Yang, Fuqian
|
|
|
177 |
C |
p.
|
artikel
|
| 3 |
Chloride-doped ZnO thin films prepared by spray pyrolysis: Effects on microstructural, optical, and photocatalytic properties
|
Fernandes, Matheus Horstmann
|
|
|
177 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
177 |
C |
p.
|
artikel
|
| 5 |
Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions
|
Al-Naghmaish, Aishah
|
|
|
177 |
C |
p.
|
artikel
|
| 6 |
Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT
|
Alim, Mohammad Abdul
|
|
|
177 |
C |
p.
|
artikel
|
| 7 |
Electronic and optical properties of transition-metal (TM=Sc, Ni, Cu, Zn) adsorbed monolayer SnSe2
|
Xu, Bin
|
|
|
177 |
C |
p.
|
artikel
|
| 8 |
Influence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells
|
Shi, Kaiju
|
|
|
177 |
C |
p.
|
artikel
|
| 9 |
Insight into magnetic characteristics of an ising monolayer Fe3GeTe2 structure
|
Liu, Jing-yang
|
|
|
177 |
C |
p.
|
artikel
|
| 10 |
Investigation of temperature for the stacked Ferroelectric Heterojunction TFET(Fe-HTFET) on box substrate
|
Gopal, Girdhar
|
|
|
177 |
C |
p.
|
artikel
|
| 11 |
Physical mechanisms on the size-effect in GaN-based Micro-LEDs
|
Wu, Zhuang
|
|
|
177 |
C |
p.
|
artikel
|
| 12 |
Strain-controllable high Curie temperature and magnetic anisotropy in two-dimensional Janus 2H-VXY (X, Y = S, Se and Te, X ≠ Y)
|
Wang, Tianxing
|
|
|
177 |
C |
p.
|
artikel
|
| 13 |
Structural, optical and electrical properties of single-phase wurtzite ZnMgAlO thin films deposited by ultrasonic spray pyrolysis
|
Bose, Sourav
|
|
|
177 |
C |
p.
|
artikel
|
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