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Journal description
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Details for article 1 of 13 found articles
| Title: |
A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications |
| Author: |
Murugapandiyan, P. Kalva, Sri Rama Krishna Rajyalakshmi, V. Princy, B. Anni Tarauni, Yusuf U. Fletcher, Augustine Wasim, Mohd |
| Appeared in: |
Micro and nanostructures |
| Paging: | Volume 177 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 13 found articles
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