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                             39 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A graphene based dual-band metamaterial absorber for TE polarized THz wave Wu, Zhaozhou

168 C p.
artikel
2 An AlGaN/GaN HEMT with sputter-SiN passivation for the on-state performance improvement Yu, Cheng

168 C p.
artikel
3 A novel normally-off GaN vertical Schottky source tunnel-junction field-effect transistor Song, Xiufeng

168 C p.
artikel
4 A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications Liu, Yang

168 C p.
artikel
5 A time-fractional dual-phase-lag framework to investigate transistors with TMTC channels (TiS3, In4Se3) and size-dependent properties Fotovvat, Mohammad Hosein

168 C p.
artikel
6 Comparative analysis of strain engineering on the electronic properties of homogenous and heterostructure bilayers of MoX2 (X = S, Se, Te) Palepu, Joshna

168 C p.
artikel
7 COMSOL simulation of non-radiative recombination heat and joule heat in CZTSSe thin film solar cells Hajjiah, Ali

168 C p.
artikel
8 Design and optimizing of trench Schottky barrier-controlled β-Ga2O3 Schottky diode with low turn-on voltage and leakage current Shen, Yisong

168 C p.
artikel
9 Different coupling level induced mode shift of plasmon resonance in Au/ZnO heterojunction Xu, Chao

168 C p.
artikel
10 Dynamic dielectric properties of an antiferroelectric/ferroelectric mixed-spin (5/2, 3/2) Ising system under a time-dependent oscillating electric field Chang, Chun-lu

168 C p.
artikel
11 Editorial Board
168 C p.
artikel
12 Effect and optimization of ZnO layer on the performance of GaInP/GaAs tandem solar cell Bakour, Abdelbasset

168 C p.
artikel
13 Effects of oxidation on the electronic and optical properties of GaN(0001) surface: First principles study Nie, Kuiying

168 C p.
artikel
14 Field plated, gate work function engineered AlGaN channel HEMTs with improved DC, RF and power performance Sreelekshmi, P.S.

168 C p.
artikel
15 GaAs thin-film solar cells photocurrent enhancement based on a new checkered grating back-reflector architecture Abdi, Ghazal

168 C p.
artikel
16 Graphene/porous GaN Schottky Betacell Naghipour, Yahya

168 C p.
artikel
17 Hofstadter butterflies for square and honeycomb periodic arrays of quantum dots with Aharonov-Bohm solenoids Grishanov, E.N.

168 C p.
artikel
18 Investigation on copper doped CdSe thin films for photodetector applications Moger, Sahana Nagappa

168 C p.
artikel
19 Investigations on interface charge conduction mechanisms for chemically grown manganite – Manganite structure: Hysteretic current – Voltage characteristics Rajyaguru, Bhargav

168 C p.
artikel
20 Localization effects in graphene nanoribbons with quasiperiodic hopping modulation da Silva, José R.

168 C p.
artikel
21 Modelling and simulation of the electrical parameters of DMSO doped PEDOT: PSS/n-Si organic/inorganic solar cells using the Lambert W function Hermi, R.

168 C p.
artikel
22 New families of quantum spin Hall insulators with rashba effect in functionalized InBi monolayers Shen, Ningyuan

168 C p.
artikel
23 Nonequilibrium diagram technique and its application to study quantum electron transport in nanoelectronic devices Moulhim, Ali

168 C p.
artikel
24 Novel Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with low specific on-resistance by super junction layer Duan, Baoxing

168 C p.
artikel
25 Performance enhancement of CIGS solar cells using ITO as buffer layer Ghamsari-Yazdel, Fatemeh

168 C p.
artikel
26 Performance investigation of cesium formamidinium lead mixed halide (FA0.83Cs0.17PbI3-xBrx) for different iodine and bromine ratios Niloy, Arnab Barua

168 C p.
artikel
27 Probing the bandstructure dependent figures of merit in InAs/GaAs quantum dot photodetectors Rahaman, Sabina

168 C p.
artikel
28 Realization of polarization adjusting in reconfigurable graphene-based microstrip antenna by adding leaf-shaped patch Kiani, Narges

168 C p.
artikel
29 Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review Mounika, B.

168 C p.
artikel
30 Renovation of dual-band to quad-band polarization-insensitive and wide incident angle perfect absorber based on the extra graphene layer Zamzam, Pouria

168 C p.
artikel
31 Research on the effect of gate etching depth on the performance of GaN-based HEMTs under medium source-drain etching Li, Jialin

168 C p.
artikel
32 Simultaneous effects of the confinement of polar optical phonons and spin-orbit coupling on the free carrier absorption of a nanowire Vartanian, A.L.

168 C p.
artikel
33 Simultaneous effect study of eccentricity and capping matrix on effective dielectric function in spheroidal CdSe/ZnSe core/shell quantum dot Yahyaoui, N.

168 C p.
artikel
34 Strain-tunable carrier mobility of Fe-doped GaN: A first-principles study Jia, Wanli

168 C p.
artikel
35 Tailoring of structural, opto-nonlinear and electrical properties of CdO thin films via Zn and Ag co-doping for optoelectronics applications Khan, Z.R.

168 C p.
artikel
36 The anchoring effect of Nb-based MXenes lithium-sulfur batteries: A first-principles study Ling, Changsheng

168 C p.
artikel
37 The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer Yolcu, Gamze

168 C p.
artikel
38 Theoretical study on electronic, optical, magnetic and photocatalytic properties of codoped SrTiO3 for green energy application Fadlallah, Mohamed M.

168 C p.
artikel
39 Thermodynamic characteristics and magnetocaloric effect of a diluted graphdiyne monolayer with defects: A Monte Carlo study Liu, Zhen-yu

168 C p.
artikel
                             39 gevonden resultaten
 
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