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                             51 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab-initio calculation of (101) and (100) surface for β - FeSi2 Tanimoto, Satoru
 2011
 11 C p. 146-149
4 p.
 artikel
2 AES and EELS study of desorption of magnesium silicide films on Si(111) Galkin, Konstantin N.
 2011
 11 C p. 51-54
4 p.
 artikel
3 Al- and Cu-doped BaSi 2 films on Si(111) substrate by molecular beam epitaxy and evaluation of depth profiles of Al and Cu atoms Ajmal Khan, M.
 2011
 11 C p. 11-14
4 p.
 artikel
4 Antireflection coatings with FeSi2 layer: Application to spectrally selective infrared emitter Kaneko, Y.
 2011
 11 C p. 71-74
4 p.
 artikel
5 APAC-SILICIDE 2010 Maeda, Yoshihito
 2011
 11 C p. 7-10
4 p.
 artikel
6 Atomic diffusion in the interface of Fe/Si prepared by magnetron sputtering Zhang, J.
 2011
 11 C p. 126-129
4 p.
 artikel
7 Behavior of nickel silicide in multi-crystalline silicon for solar cells Tachibana, T.
 2011
 11 C p. 163-166
4 p.
 artikel
8 Chemical trends of the band gaps in semiconducting silicon clathrates Imai, Y.
 2011
 11 C p. 59-62
4 p.
 artikel
9 Contents 2011
 11 C p. 1-6
6 p.
 artikel
10 Current-induced magnetization switching in Fe3Si/FeSi2 superlattices Hirakawa, Shin-ichi
 2011
 11 C p. 154-157
4 p.
 artikel
11 Determination of silicon vacancy in ion-beam synthesized β - FeSi 2 Maeda, Y.
 2011
 11 C p. 83-86
4 p.
 artikel
12 Effect of temperature modulation during temperature gradient solution growth of β - FeSi2 Ujiie, Y.
 2011
 11 C p. 177-180
4 p.
 artikel
13 Effects of annealing temperature on the structure and surface feature of BaSi2 films grown on Si(111) substrates Yang, Ziyi
 2011
 11 C p. 118-121
4 p.
 artikel
14 Electrical properties of Ca2Si sintered compact synthesized by spark plasma sintering Wen, C.
 2011
 11 C p. 106-109
4 p.
 artikel
15 Fabrication and characterization of novel Fe(Os)Si2 semiconductor Gao, Y.
 2011
 11 C p. 75-78
4 p.
 artikel
16 Fabrication of BaSi2 films on transparent CaF2 (111) substrates by molecular beam epitaxy for optical characterization Toh, K.
 2011
 11 C p. 189-192
4 p.
 artikel
17 First-principles calculations on the electronic structure and optical properties of Mg2Si epitaxial on Si (111) Chen, Qian
 2011
 11 C p. 134-137
4 p.
 artikel
18 Formation of nanocrystalline CrSi2 layers in Si by ion implantation and pulsed annealing Batalov, R.I.
 2011
 11 C p. 43-46
4 p.
 artikel
19 Formation of poly-Si layers on AZO/ SiO 2 substrates and anti-reflection coating with AZO films for BaSi 2 solar cells Okada, A.
 2011
 11 C p. 31-34
4 p.
 artikel
20 Growth of Al-doped p-type BaSi 2 films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties Takeishi, M.
 2011
 11 C p. 27-30
4 p.
 artikel
21 Growth, optical and electrical properties of Ca2Si film grown on Si(111) and Mg2Si/Si (111) substrates Dotsenko, S.A.
 2011
 11 C p. 95-98
4 p.
 artikel
22 Influence of CrSi2 nanocrystals on the electrical properties of Au/Si - p/CrSi2 NCs/Si(111) - n mesa-diodes Galkin, Nikolay G.
 2011
 11 C p. 35-38
4 p.
 artikel
23 Influence of Si(111) √3×√3 - R30 ° -Sb surface phase on the formation and conductance of low-dimensional magnesium silicide layer on Si(111) substrate Goroshko, Dmitry L.
 2011
 11 C p. 91-94
4 p.
 artikel
24 Influence of sputtering power on the structural and morphological properties of semiconducting Mg2Si films Xiao, Qingquan
 2011
 11 C p. 130-133
4 p.
 artikel
25 Iron silicide photonic crystals and light propagation property Maeda, Yoshihito
 2011
 11 C p. 79-82
4 p.
 artikel
26 Magnetooptical properties of iron based Heusler alloy epitaxial films on Ge(111) Maeda, Yoshihito
 2011
 11 C p. 200-203
4 p.
 artikel
27 Magnetoresistance characteristics of Fe 3 Si / CaF 2 / Fe 3 Si heterostructures grown on Si(111) by molecular beam epitaxy Harada, K.
 2011
 11 C p. 15-18
4 p.
 artikel
28 Metal induced crystallization of amorphous silicon for photovoltaic solar cells Van Gestel, D.
 2011
 11 C p. 196-199
4 p.
 artikel
29 Molecular beam epitaxy of β - FeSi 2 films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC Kawakami, H.
 2011
 11 C p. 23-26
4 p.
 artikel
30 On the role of induced impurity potential of β - FeSi2 Kondo, Shin-ichiro
 2011
 11 C p. 142-145
4 p.
 artikel
31 Phonon properties of β - FeSi 2 and photoluminescence Maeda, Y.
 2011
 11 C p. 167-170
4 p.
 artikel
32 Photoluminescence and photoreflectance studies in Si/ β - FeSi 2 /Si(001) double heterostructure Yoneda, K.
 2011
 11 C p. 185-188
4 p.
 artikel
33 Preparation and electrical properties of Mn silicides by reaction of MnCl2 and Si powder Hu, Junhua
 2011
 11 C p. 138-141
4 p.
 artikel
34 Preparation of Schottky contacts on n -type Mg2Si single crystalline substrate Sekino, K.
 2011
 11 C p. 171-173
3 p.
 artikel
35 Reduction of carrier concentrations of β - FeSi 2 films by atomic hydrogen-assisted molecular beam epitaxy Akutsu, K.
 2011
 11 C p. 19-22
4 p.
 artikel
36 Silicon overgrowth atop low-dimensional Mg2Si on Si(111): structure, optical and thermoelectrical properties Galkin, Konstantin N.
 2011
 11 C p. 55-58
4 p.
 artikel
37 Sr2SiO4 flower-like nanostructures grown by thermal oxidation of SrSi2 with Ga droplets Yang, Qing
 2011
 11 C p. 114-117
4 p.
 artikel
38 Study on the electronic structure and optical properties of the environmentally friendly semiconductor Ca3Si4 Gao, Ran
 2011
 11 C p. 99-102
4 p.
 artikel
39 Surface analysis of single-crystalline β - FeSi 2 Yamada, Yoichi
 2011
 11 C p. 67-70
4 p.
 artikel
40 Surface characterization of homoepitaxial β - FeSi2 film on β - FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy Esaka, F.
 2011
 11 C p. 150-153
4 p.
 artikel
41 Surface structures of β - FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth Matsumura, S.
 2011
 11 C p. 174-176
3 p.
 artikel
42 Temperature dependence of direct transition energies in β - FeSi 2 epitaxial films on Si(111) substrate Noda, K.
 2011
 11 C p. 181-184
4 p.
 artikel
43 The effect of crystalline structure on photoluminescence of the β - FeSi2 film prepared by pulsed laser deposition using two types of target Zakir Hossain, M.
 2011
 11 C p. 158-162
5 p.
 artikel
44 The model of the magnesium silicide phase (2/3√3×2/3√3 )-R30°on Si(111) Galkin, Konstantin N.
 2011
 11 C p. 47-50
4 p.
 artikel
45 Thermal process of iron silicides prepared by Magnetron sputtering Zhang, J.
 2011
 11 C p. 122-125
4 p.
 artikel
46 Thermoelectric properties of group VI metal silicide semiconductors Nonomura, T.
 2011
 11 C p. 110-113
4 p.
 artikel
47 Thermoelectric properties of sputtered iron-silicide Nakamura, Shigeyuki
 2011
 11 C p. 103-105
3 p.
 artikel
48 Toward the epitaxial growth of ferromagnetic γ ’- Fe4N on Si(100) substrate by molecular beam epitaxy Lee, Geun Hyoung
 2011
 11 C p. 193-195
3 p.
 artikel
49 Transformation from ε -FeSi to β - FeSi2 in RF-sputtered FeSi x films Kawabata, Naoki
 2011
 11 C p. 87-90
4 p.
 artikel
50 Ultra high vacuum growth of CrSi2 and β - FeSi 2 nanoislands and Si top layers on the plasma modified monocrystalline silicon surfaces Galkin, Nikolay G.
 2011
 11 C p. 39-42
4 p.
 artikel
51 Valence electronic structure of β - FeSi 2 single crystal investigated by photoelectron spectroscopy using synchrotron radiation Ogawa, K.
 2011
 11 C p. 63-66
4 p.
 artikel
                             51 gevonden resultaten
 
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