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Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
17 gevonden resultaten
| nr | titel | auteur | tijdschrift | jaar | jaarg. | afl. | pagina('s) | type |
| 1 | An improved OM-CVD growth model for III–V semiconductors—Metalorganic halides for the CVD growth |
Prakash, Hari |
1986 |
12 | 1-4 |
p. 265-269 5 p. |
artikel |
|
| 2 | Characterization and kinetics of AlxGa1−x As by organometallic-CVD |
Prakash, Hari |
1986 |
12 | 1-4 |
p. 243-256 14 p. |
artikel |
|
| 3 | Compound index |
1986 |
12 | 1-4 |
p. 341-342 2 p. |
artikel |
||
| 4 | Editorial |
Pamplin, Brian |
1986 |
12 | 1-4 |
p. vii- 1 p. |
artikel |
|
| 5 | Editorial Board |
1986 |
12 | 1-4 |
p. ii- 1 p. |
artikel |
||
| 6 | Epitaxial growth of InP and related alloys |
Sharma, B.L. |
1986 |
12 | 1-4 |
p. 295-318 24 p. |
artikel |
|
| 7 | Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP |
Panish, M.B. |
1986 |
12 | 1-4 |
p. 1-28 28 p. |
artikel |
|
| 8 | Implanted silicon epitaxy by thermal and laser processing |
Campisano, Salvatore Ugo |
1986 |
12 | 1-4 |
p. 67-95 29 p. |
artikel |
|
| 9 | Liquid phase electroepitaxy of semiconductor compounds |
Bryskiewicz, T. |
1986 |
12 | 1-4 |
p. 29-43 15 p. |
artikel |
|
| 10 | LPE growth of InGaAs/InP and AiGaInAs/InP structures |
Nakajima, Kazuo |
1986 |
12 | 1-4 |
p. 97-213 117 p. |
artikel |
|
| 11 | LPE growth of InP and related alloys |
Nagai, Haruo |
1986 |
12 | 1-4 |
p. 271-294 24 p. |
artikel |
|
| 12 | LPE of buried heterostructure laser devices |
Logan, R.A. |
1986 |
12 | 1-4 |
p. 215-242 28 p. |
artikel |
|
| 13 | MOCVD AlxGa1−x As solar cells |
Prakash, Hari |
1986 |
12 | 1-4 |
p. 257-264 8 p. |
artikel |
|
| 14 | MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth process |
Cheng, C.H. |
1986 |
12 | 1-4 |
p. 319-333 15 p. |
artikel |
|
| 15 | Preface |
Bachrach, Robert Z. |
1986 |
12 | 1-4 |
p. ix-x nvt p. |
artikel |
|
| 16 | Silicon molecular beam epitaxy |
Shiraki, Yasuhiro |
1986 |
12 | 1-4 |
p. 45-66 22 p. |
artikel |
|
| 17 | Subject index |
1986 |
12 | 1-4 |
p. 335-339 5 p. |
artikel |
17 gevonden resultaten