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Journal description
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Details for article 14 of 17 found articles
| Title: |
MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth process |
| Author: |
Cheng, C.H. Jones, K.A. Motyl, K.M. |
| Appeared in: |
Progress in crystal growth and characterization |
| Paging: | Volume 12 (1986) nr. 1-4 pages 15 p. |
| Year: |
1986 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 17 found articles
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