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                             17 results found
no title author magazine year volume issue page(s) type
1 An improved OM-CVD growth model for III–V semiconductors—Metalorganic halides for the CVD growth Prakash, Hari
1986
12 1-4 p. 265-269
5 p.
article
2 Characterization and kinetics of AlxGa1−x As by organometallic-CVD Prakash, Hari
1986
12 1-4 p. 243-256
14 p.
article
3 Compound index 1986
12 1-4 p. 341-342
2 p.
article
4 Editorial Pamplin, Brian
1986
12 1-4 p. vii-
1 p.
article
5 Editorial Board 1986
12 1-4 p. ii-
1 p.
article
6 Epitaxial growth of InP and related alloys Sharma, B.L.
1986
12 1-4 p. 295-318
24 p.
article
7 Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP Panish, M.B.
1986
12 1-4 p. 1-28
28 p.
article
8 Implanted silicon epitaxy by thermal and laser processing Campisano, Salvatore Ugo
1986
12 1-4 p. 67-95
29 p.
article
9 Liquid phase electroepitaxy of semiconductor compounds Bryskiewicz, T.
1986
12 1-4 p. 29-43
15 p.
article
10 LPE growth of InGaAs/InP and AiGaInAs/InP structures Nakajima, Kazuo
1986
12 1-4 p. 97-213
117 p.
article
11 LPE growth of InP and related alloys Nagai, Haruo
1986
12 1-4 p. 271-294
24 p.
article
12 LPE of buried heterostructure laser devices Logan, R.A.
1986
12 1-4 p. 215-242
28 p.
article
13 MOCVD AlxGa1−x As solar cells Prakash, Hari
1986
12 1-4 p. 257-264
8 p.
article
14 MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth process Cheng, C.H.
1986
12 1-4 p. 319-333
15 p.
article
15 Preface Bachrach, Robert Z.
1986
12 1-4 p. ix-x
nvt p.
article
16 Silicon molecular beam epitaxy Shiraki, Yasuhiro
1986
12 1-4 p. 45-66
22 p.
article
17 Subject index 1986
12 1-4 p. 335-339
5 p.
article
                             17 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands