| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of Charge Redistribution During Self-discharge of Double-Layer Supercapacitors
|
Hao, Chenglong
|
|
2016
|
45 |
4 |
p. 2160-2171
|
artikel
|
| 2 |
Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile
|
Singh, Kunal
|
|
2015
|
45 |
4 |
p. 2184-2192
|
artikel
|
| 3 |
Anisotropic Mechanical and Giant Magneto-Impedance Properties of Cobalt-Rich Amorphous Ribbons
|
Tran, H. T.
|
|
2016
|
45 |
4 |
p. 2278-2285
|
artikel
|
| 4 |
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals
|
Stephenson, Chad A.
|
|
2015
|
45 |
4 |
p. 2121-2126
|
artikel
|
| 5 |
Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride
|
Jia, Ye
|
|
2015
|
45 |
4 |
p. 2013-2018
|
artikel
|
| 6 |
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
|
Mosleh, Aboozar
|
|
2016
|
45 |
4 |
p. 2051-2058
|
artikel
|
| 7 |
Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method
|
Guo, Jianqiu
|
|
2016
|
45 |
4 |
p. 2045-2050
|
artikel
|
| 8 |
Dynamics of an Optically Generated Electric Field in a Quantum Dot Molecule Device Using Time-Resolved Photoluminescence Measurements
|
Thota, Venkata R.
|
|
2016
|
45 |
4 |
p. 2038-2044
|
artikel
|
| 9 |
Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE
|
Reshchikov, M. A.
|
|
2015
|
45 |
4 |
p. 2178-2183
|
artikel
|
| 10 |
Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers
|
Yang, Yu
|
|
2016
|
45 |
4 |
p. 2066-2070
|
artikel
|
| 11 |
Effect of Growth Parameters and Substrate Surface Preparation for High-Density Vertical GaAs/GaAsSb Core–Shell Nanowires on Silicon with Photoluminescence Emission at 1.3 μm
|
Kasanaboina, Pavan Kumar
|
|
2016
|
45 |
4 |
p. 2108-2114
|
artikel
|
| 12 |
Efficiency of a Sandwiched Thermoelectric Material with a Graded Interlayer and Temperature-Dependent Properties
|
Wallace, T. T.
|
|
2016
|
45 |
4 |
p. 2142-2149
|
artikel
|
| 13 |
Enhanced Field-Emission Performance from Carbon Nanotube Emitters on Nickel Foam Cathodes
|
Song, Meng
|
|
2016
|
45 |
4 |
p. 2299-2304
|
artikel
|
| 14 |
Enhancement of Curie Temperature (Tc) and Magnetization of Fe-Ni Invar alloy Through Cu Substitution and with He+2 Ion Irradiation
|
Khan, Sajjad Ahmad
|
|
2015
|
45 |
4 |
p. 2258-2265
|
artikel
|
| 15 |
Erratum to: Influence of Processing Conditions and Material Properties on Electrohydrodynamic Direct Patterning of a Polymer Solution
|
Jang, Shin
|
|
2016
|
45 |
4 |
p. 2305-2306
|
artikel
|
| 16 |
Fabrication of Nanocomposites of SnO2 and MgAl2O4 for Gas Sensing Applications
|
Nithyavathy, N.
|
|
2015
|
45 |
4 |
p. 2193-2205
|
artikel
|
| 17 |
Facile Synthesis and Characterization of Two Dimensional Layered Tin Disulfide Nanowalls
|
Mutlu, Zafer
|
|
2015
|
45 |
4 |
p. 2115-2120
|
artikel
|
| 18 |
Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals
|
Ahmad, Nazir
|
|
2016
|
45 |
4 |
p. 2206-2215
|
artikel
|
| 19 |
Generation of White Light from Dysprosium-Doped Strontium Aluminate Phosphor by a Solid-State Reaction Method
|
Sahu, Ishwar Prasad
|
|
2015
|
45 |
4 |
p. 2222-2232
|
artikel
|
| 20 |
High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy
|
Vaughan, E. I.
|
|
2016
|
45 |
4 |
p. 2025-2030
|
artikel
|
| 21 |
Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT
|
Jena, Kanjalochan
|
|
2015
|
45 |
4 |
p. 2172-2177
|
artikel
|
| 22 |
Influence of Boron Substitution on Conductance of Pyridine- and Pentane-Based Molecular Single Electron Transistors: First-Principles Analysis
|
Srivastava, Anurag
|
|
2016
|
45 |
4 |
p. 2233-2241
|
artikel
|
| 23 |
Influence of Processing Conditions and Material Properties on Electrohydrodynamic Direct Patterning of a Polymer Solution
|
Jang, Shin
|
|
2016
|
45 |
4 |
p. 2291-2298
|
artikel
|
| 24 |
In Situ Growth of In2S3 Nanorods in Poly(3-Hexylthiophene) Hybrid Films
|
Cota-Leal, M.
|
|
2015
|
45 |
4 |
p. 2266-2273
|
artikel
|
| 25 |
Localized Charge Carrier Transport Properties of Zn1−xNixO/NiO Two-Phase Composites
|
Joshi, D. C.
|
|
2015
|
45 |
4 |
p. 2059-2065
|
artikel
|
| 26 |
MBE Grown InxGa1−xN Thin Films with Bright Visible Emission Centered at 550 nm
|
Dasari, K.
|
|
2016
|
45 |
4 |
p. 2071-2077
|
artikel
|
| 27 |
Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12%
|
Al-Kabi, Sattar
|
|
2015
|
45 |
4 |
p. 2133-2141
|
artikel
|
| 28 |
Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors
|
Liu, Chao
|
|
2016
|
45 |
4 |
p. 2092-2101
|
artikel
|
| 29 |
Quantitative Analysis of Porosity and Transport Properties by FIB-SEM 3D Imaging of a Solder Based Sintered Silver for a New Microelectronic Component
|
Rmili, W.
|
|
2016
|
45 |
4 |
p. 2242-2251
|
artikel
|
| 30 |
Quick Fabrication and Thermoelectric Properties of Cu12Sb4S13 Tetrahedrite
|
Wang, Juyi
|
|
2015
|
45 |
4 |
p. 2274-2277
|
artikel
|
| 31 |
Room-Temperature Fabrication of a Flexible Thermoelectric Generator Using a Dry-Spray Deposition System
|
Song, Dae-Seob
|
|
2016
|
45 |
4 |
p. 2286-2290
|
artikel
|
| 32 |
SiC Homoepitaxy, Etching and Graphene EpitaxialGrowth on SiC Substrates Using a Novel FluorinatedSi Precursor Gas (SiF4)
|
Rana, Tawhid
|
|
2015
|
45 |
4 |
p. 2019-2024
|
artikel
|
| 33 |
Spin-Controlled Conductivity in a Thiophene-Functionalized Iron-Bis(dicarbollide)
|
Beach, Benjamin
|
|
2016
|
45 |
4 |
p. 2150-2159
|
artikel
|
| 34 |
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
|
Tadjer, Marko J.
|
|
2016
|
45 |
4 |
p. 2031-2037
|
artikel
|
| 35 |
Study of Defects in GaN In Situ Doped with Eu3+ Ion Grown by OMVPE
|
Wang, Jingzhou
|
|
2016
|
45 |
4 |
p. 2001-2007
|
artikel
|
| 36 |
Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy
|
Goue, Ouloide Y.
|
|
2015
|
45 |
4 |
p. 2078-2086
|
artikel
|
| 37 |
Study on Solid-Phase Crystallization of Amorphized Vanadium-Doped ZnO Thin Films
|
Watanabe, Akihiro
|
|
2016
|
45 |
4 |
p. 2008-2012
|
artikel
|
| 38 |
Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate
|
Nakasu, Taizo
|
|
2016
|
45 |
4 |
p. 2127-2132
|
artikel
|
| 39 |
Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air
|
Zhao, Shirong
|
|
2015
|
45 |
4 |
p. 2087-2091
|
artikel
|
| 40 |
Temperature Dependent Electrical Properties of PZT Wafer
|
Basu, T.
|
|
2016
|
45 |
4 |
p. 2252-2257
|
artikel
|
| 41 |
Thermodynamic Description of the Ternary Sb-Sn-Zn System
|
Gierlotka, Wojciech
|
|
2016
|
45 |
4 |
p. 2216-2221
|
artikel
|
| 42 |
Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers
|
Katz, M. B.
|
|
2016
|
45 |
4 |
p. 2102-2107
|
artikel
|
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