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                             41 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes Bellotti, Enrico
 2011
 40 8 p. 1651-1656
 artikel
2 Calculation of Auger Lifetimes in HgCdTe Bertazzi, Francesco
 2011
 40 8 p. 1663-1667
 artikel
3 CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction Chang, Y.
 2011
 40 8 p. 1854-1859
 artikel
4 Chemical Polishing of CdTe and CdZnTe in Iodine–Methanol Etching Solutions Ivanits’ka, V. G.
 2011
 40 8 p. 1802-1808
 artikel
5 Core–Shell ZnxCd1−xSe/ZnyCd1−ySe Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications Al-Amoody, Fuad
 2011
 40 8 p. 1699-1705
 artikel
6 Design and Modeling of HgCdTe nBn Detectors Itsuno, A. M.
 2011
 40 8 p. 1624-1629
 artikel
7 Dislocation Analysis in (112)B HgCdTe/CdTe/Si Benson, J. D.
 2011
 40 8 p. 1847-1853
 artikel
8 Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology Rehm, Robert
 2011
 40 8 p. 1738-1743
 artikel
9 Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy Shintri, Shashidhar
 2011
 40 8 p. 1637-1641
 artikel
10 Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si Farrell, S.
 2011
 40 8 p. 1727-1732
 artikel
11 Effects of Varying MBE Growth Conditions on Layered Zn-Se-Te Structures Roy, Bidisha
 2011
 40 8 p. 1775-1780
 artikel
12 Foreword Sivananthan, S.
 2011
 40 8 p. 1613-1614
 artikel
13 HgCdTe Photon Trapping Structure for BroadbandMid-Wavelength Infrared Absorption Wehner, J. G. A.
 2011
 40 8 p. 1840-1846
 artikel
14 HgCdTe Quantum Detection: from Long-Wave IR down to UV Gravrand, O.
 2011
 40 8 p. 1781-1784
 artikel
15 High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy Rao, S. R.
 2011
 40 8 p. 1790-1794
 artikel
16 History-Dependent Impact Ionization Theory Applied to HgCdTe e-APDs Rothman, Johan
 2011
 40 8 p. 1757-1768
 artikel
17 Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection Yang, G.
 2011
 40 8 p. 1689-1692
 artikel
18 Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays Smith, E. P. G.
 2011
 40 8 p. 1630-1636
 artikel
19 Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation Licausi, Nicholas
 2011
 40 8 p. 1668-1673
 artikel
20 Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide Ye, Z. H.
 2011
 40 8 p. 1642-1646
 artikel
21 Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy ZHAO, W. F.
 2011
 40 8 p. 1733-1737
 artikel
22 Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates Wang, X. J.
 2011
 40 8 p. 1860-1866
 artikel
23 Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates Reddy, M.
 2011
 40 8 p. 1706-1716
 artikel
24 Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators Chan, P.-Y.
 2011
 40 8 p. 1685-1688
 artikel
25 Nonvolatile Silicon Memory Using GeOx-Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator Gogna, M.
 2011
 40 8 p. 1769-1774
 artikel
26 Optimization of Microlenses for InSb Infrared Focal-Plane Arrays Guo, N.
 2011
 40 8 p. 1647-1650
 artikel
27 Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe Rhiger, David R.
 2011
 40 8 p. 1815-1822
 artikel
28 Planar n-on-p HgCdTe FPAs for LWIR and VLWIR Applications Wollrab, R.
 2011
 40 8 p. 1618-1623
 artikel
29 Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures Stoltz, A. J.
 2011
 40 8 p. 1785-1789
 artikel
30 Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers Markunas, J. K.
 2011
 40 8 p. 1809-1814
 artikel
31 Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators Jain, F. C.
 2011
 40 8 p. 1717-1726
 artikel
32 Spectral Response Model of Backside-Illuminated HgCdTe Detectors D’Souza, A. I.
 2011
 40 8 p. 1657-1662
 artikel
33 Status of p-on-n Arsenic-Implanted HgCdTe Technologies Mollard, L.
 2011
 40 8 p. 1830-1839
 artikel
34 Study of HgCdSe Material Grown by Molecular Beam Epitaxy Brill, G.
 2011
 40 8 p. 1679-1684
 artikel
35 The Effect of Various Detector Geometries on the Performance of CZT Using One Crystal Washington, Aaron L.
 2011
 40 8 p. 1744-1748
 artikel
36 The Effects of Microvoid Defects on MWIR HgCdTe-Based Diodes Billman, C. A.
 2011
 40 8 p. 1693-1698
 artikel
37 The William E. Spicer–Thomas N. Casselman Award for Best Student Paper Reine, Marion B.
 2011
 40 8 p. 1615-1617
 artikel
38 Three-Dimensional Electromagnetic and Electrical Simulation of HgCdTe Pixel Arrays Keasler, Craig A.
 2011
 40 8 p. 1795-1801
 artikel
39 Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon Karmakar, Supriya
 2011
 40 8 p. 1749-1756
 artikel
40 Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach Causier, A.
 2011
 40 8 p. 1823-1829
 artikel
41 ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells Wang, W.
 2011
 40 8 p. 1674-1678
 artikel
                             41 gevonden resultaten
 
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