| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells
|
Wilson, Marshall
|
|
2010
|
39 |
6 |
p. 642-647
|
artikel
|
| 2 |
A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals
|
González, M.A.
|
|
2010
|
39 |
6 |
p. 781-786
|
artikel
|
| 3 |
Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching
|
Chanson, R.
|
|
2010
|
39 |
6 |
p. 688-693
|
artikel
|
| 4 |
Cathodoluminescence Study of Orientation-Patterned GaAs Crystals for Nonlinear Optics
|
Martínez, O.
|
|
2010
|
39 |
6 |
p. 805-810
|
artikel
|
| 5 |
Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method
|
Yoshida, Haruhiko
|
|
2010
|
39 |
6 |
p. 773-776
|
artikel
|
| 6 |
Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy
|
Kaniewska, M.
|
|
2010
|
39 |
6 |
p. 766-772
|
artikel
|
| 7 |
Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy
|
Zeng, Yuheng
|
|
2010
|
39 |
6 |
p. 648-651
|
artikel
|
| 8 |
Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission
|
Tomm, Jens W.
|
|
2010
|
39 |
6 |
p. 723-726
|
artikel
|
| 9 |
Defect-Related White-Light Emission from ZnO in an n-Mg0.2Zn0.8O/n-ZnO/SiOx Heterostructure on n-Si
|
Chen, Peiliang
|
|
2010
|
39 |
6 |
p. 652-655
|
artikel
|
| 10 |
Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell
|
Nishioka, Kensuke
|
|
2010
|
39 |
6 |
p. 704-708
|
artikel
|
| 11 |
Determination of Piezoelectric Fields Across InGaN/GaN Quantum Wells by Means of Electron Holography
|
Deguchi, Masashi
|
|
2010
|
39 |
6 |
p. 815-818
|
artikel
|
| 12 |
Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging
|
Twigg, M. E.
|
|
2010
|
39 |
6 |
p. 743-746
|
artikel
|
| 13 |
Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces
|
Martínez, O.
|
|
2010
|
39 |
6 |
p. 671-676
|
artikel
|
| 14 |
Effects of Chemical Treatment on the Luminescence of ZnO
|
Dierre, B.
|
|
2010
|
39 |
6 |
p. 761-765
|
artikel
|
| 15 |
Effects of Crystal-Induced Optical Incoherence in Electro-Optic Field Sensors
|
Garzarella, A.
|
|
2010
|
39 |
6 |
p. 811-814
|
artikel
|
| 16 |
Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices
|
Chen, Bin
|
|
2010
|
39 |
6 |
p. 684-687
|
artikel
|
| 17 |
Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices
|
Chen, Bin
|
|
|
39 |
6 |
p. 684-687
|
artikel
|
| 18 |
Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC
|
Giles, A.J.
|
|
2010
|
39 |
6 |
p. 777-780
|
artikel
|
| 19 |
Electron Scattering Mechanism of FTO Films Grown by Spray Pyrolysis Method
|
Oshima, Minoru
|
|
2010
|
39 |
6 |
p. 819-822
|
artikel
|
| 20 |
Enhancement of Defect Production Rates in n-Type Silicon by Hydrogen Implantation Near 270 K
|
Tokuda, Yutaka
|
|
2010
|
39 |
6 |
p. 719-722
|
artikel
|
| 21 |
Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy
|
Kosemura, Daisuke
|
|
2010
|
39 |
6 |
p. 694-699
|
artikel
|
| 22 |
Evolution of Optical and Mechanical Properties of Semiconductors over 40 Years
|
Pyshkin, Sergei
|
|
2010
|
39 |
6 |
p. 635-641
|
artikel
|
| 23 |
Foreword
|
Edelman, Piotr
|
|
2010
|
39 |
6 |
p. 619
|
artikel
|
| 24 |
Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers
|
Ziegler, Mathias
|
|
2010
|
39 |
6 |
p. 709-714
|
artikel
|
| 25 |
Imaging of Metal Impurities in Silicon by Luminescence Spectroscopy and Synchrotron Techniques
|
Schubert, Martin C.
|
|
2010
|
39 |
6 |
p. 787-793
|
artikel
|
| 26 |
Influence of Operating Conditions on Quantum Cascade Laser Temperature
|
Pierściński, Kamil
|
|
2010
|
39 |
6 |
p. 630-634
|
artikel
|
| 27 |
Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
|
Baeumler, Martina
|
|
2010
|
39 |
6 |
p. 756-760
|
artikel
|
| 28 |
Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers
|
Yastrubchak, O.
|
|
2010
|
39 |
6 |
p. 794-798
|
artikel
|
| 29 |
LBIC and Reflectance Mapping of Multicrystalline Si Solar Cells
|
Moralejo, B.
|
|
2010
|
39 |
6 |
p. 663-670
|
artikel
|
| 30 |
Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals
|
Zhang, Yu
|
|
2010
|
39 |
6 |
p. 799-804
|
artikel
|
| 31 |
Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions
|
Ai, Bin
|
|
2010
|
39 |
6 |
p. 732-737
|
artikel
|
| 32 |
Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
|
Zeimer, U.
|
|
2010
|
39 |
6 |
p. 677-683
|
artikel
|
| 33 |
Phonon-Assisted Tunneling from Z1/Z2 in 4H-SiC
|
Evwaraye, A. O.
|
|
2010
|
39 |
6 |
p. 751-755
|
artikel
|
| 34 |
Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells
|
Tajima, Michio
|
|
2010
|
39 |
6 |
p. 747-750
|
artikel
|
| 35 |
Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon
|
Fukuzawa, Masayuki
|
|
2010
|
39 |
6 |
p. 700-703
|
artikel
|
| 36 |
Structural Characterization of Doped GaSb Single Crystals by X-ray Topography
|
Hönnicke, M. G.
|
|
2010
|
39 |
6 |
p. 727-731
|
artikel
|
| 37 |
Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies
|
Domengie, F.
|
|
2010
|
39 |
6 |
p. 625-629
|
artikel
|
| 38 |
Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
|
Zamoryanskaya, M.V.
|
|
2010
|
39 |
6 |
p. 620-624
|
artikel
|
| 39 |
Synchrotron X-Ray Topography Study of Structural Defects and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance
|
Raghothamachar, B.
|
|
2010
|
39 |
6 |
p. 823-829
|
artikel
|
| 40 |
The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies
|
Moram, M.A.
|
|
2010
|
39 |
6 |
p. 656-662
|
artikel
|
| 41 |
Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography
|
Yamaguchi, Hirotaka
|
|
2010
|
39 |
6 |
p. 715-718
|
artikel
|
| 42 |
X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe BufferLayers on Si and Ge Substrates
|
Markunas, J. K.
|
|
2010
|
39 |
6 |
p. 738-742
|
artikel
|
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