| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN
|
Guo, H.
|
|
2010
|
39 |
5 |
p. 494-498
|
artikel
|
| 2 |
Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation
|
Pang, Liang
|
|
2010
|
39 |
5 |
p. 499-503
|
artikel
|
| 3 |
Bulk GaN Ion Cleaving
|
Moutanabbir, O.
|
|
2010
|
39 |
5 |
p. 482-488
|
artikel
|
| 4 |
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
|
Anderson, T.J.
|
|
2010
|
39 |
5 |
p. 478-481
|
artikel
|
| 5 |
Dielectric Passivation of ZnO-Based Schottky Diodes
|
Wenckstern, H. von
|
|
2009
|
39 |
5 |
p. 559-562
|
artikel
|
| 6 |
Digitally Alloyed Modulated Precursor Flow Epitaxial Growthof Ternary AlGaN with Binary AlN and GaN Sub-Layersand Observation of Compositional Inhomogeneity
|
Kim, Hee Jin
|
|
2010
|
39 |
5 |
p. 466-472
|
artikel
|
| 7 |
Digitally Alloyed Modulated Precursor Flow Epitaxial Growthof Ternary AlGaN with Binary AlN and GaN Sub-Layersand Observation of Compositional Inhomogeneity
|
Kim, Hee Jin
|
|
|
39 |
5 |
p. 466-472
|
artikel
|
| 8 |
Dual-Gate Multiple-Channel ZnO Nanowire Transistors
|
Kim, Dong-Joo
|
|
2009
|
39 |
5 |
p. 563-567
|
artikel
|
| 9 |
Effect of Post-Deposition Processing on ZnO Thin Films and Devices
|
Yen, Tingfang
|
|
2009
|
39 |
5 |
p. 568-572
|
artikel
|
| 10 |
Foreword
|
|
|
2010
|
39 |
5 |
p. 465
|
artikel
|
| 11 |
Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method
|
Das, Hrishikesh
|
|
2010
|
39 |
5 |
p. 534-539
|
artikel
|
| 12 |
Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield
|
Hao, Jianmin
|
|
2009
|
39 |
5 |
p. 530-533
|
artikel
|
| 13 |
High-Temperature Growth of GaN and AlxGa1−xNvia Ammonia-Based Metalorganic Molecular-Beam Epitaxy
|
Billingsley, Daniel
|
|
2010
|
39 |
5 |
p. 473-477
|
artikel
|
| 14 |
Identification of a Deep Acceptor Level in ZnO Due to Silver Doping
|
Chai, J.
|
|
2009
|
39 |
5 |
p. 577-583
|
artikel
|
| 15 |
Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam Deposition
|
Shen, Jung-Hsiung
|
|
2010
|
39 |
5 |
p. 612-618
|
artikel
|
| 16 |
Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors
|
Zhao, Dalong
|
|
2009
|
39 |
5 |
p. 554-558
|
artikel
|
| 17 |
Magnetron Sputter Epitaxy and Characterization of Wurtzite AlInN on Si(111) Substrates
|
Han, Qifeng
|
|
2010
|
39 |
5 |
p. 489-493
|
artikel
|
| 18 |
MOS Characteristics of C-Face 4H-SiC
|
Chen, Z.
|
|
2010
|
39 |
5 |
p. 526-529
|
artikel
|
| 19 |
Multiple Magnetic States of Silicon Carbide Diluted Magnetic Semiconductors
|
Los, Andrei
|
|
2009
|
39 |
5 |
p. 545-553
|
artikel
|
| 20 |
Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC
|
Li, M.
|
|
2010
|
39 |
5 |
p. 540-544
|
artikel
|
| 21 |
Oxygen Deficiency and Hydrogen Turn ZnO Red
|
Weber, M. H.
|
|
2010
|
39 |
5 |
p. 573-576
|
artikel
|
| 22 |
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates
|
Grenko, J. A.
|
|
2010
|
39 |
5 |
p. 504-516
|
artikel
|
| 23 |
Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates
|
Ben-Yaacov, Tammy
|
|
2009
|
39 |
5 |
p. 608-611
|
artikel
|
| 24 |
Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells
|
Polyakov, A. Y.
|
|
2009
|
39 |
5 |
p. 601-607
|
artikel
|
| 25 |
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
|
Lajn, A.
|
|
2009
|
39 |
5 |
p. 595-600
|
artikel
|
| 26 |
Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
|
Tadjer, Marko J.
|
|
2010
|
39 |
5 |
p. 517-525
|
artikel
|
| 27 |
The E3 Defect in MgxZn1−xO
|
Wenckstern, H. von
|
|
2009
|
39 |
5 |
p. 584-588
|
artikel
|
| 28 |
Zinc Oxysulfide Thin Films Grown by Pulsed Laser Deposition
|
Deulkar, Sundeep H.
|
|
2010
|
39 |
5 |
p. 589-594
|
artikel
|
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