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                             42 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab Initio Studies of Hydrogen Defects in CdTe Rak, Zs.
2009
38 8 p. 1539-1547
artikel
2 AFM Characterization of Raman Laser-Induced Damage on CdZnTe Crystal Surfaces Teague, Lucile C.
2009
38 8 p. 1522-1527
artikel
3 A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe D’Orsogna, D.
2009
38 8 p. 1698-1706
artikel
4 A Scanning Probe Microscopy Study of Cd1−xZnxTe Egan, C. K.
2009
38 8 p. 1528-1532
artikel
5 Characterization of CdTe and HgCdTe by Photo-Thermal Excitation Spectroscopy Furstenberg, Robert
2009
38 8 p. 1533-1538
artikel
6 Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique Lamarre, P.
2009
38 8 p. 1746-1754
artikel
7 Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid Moravec, P.
2009
38 8 p. 1645-1651
artikel
8 Chemical–Mechanical Polishing of CdTe and ZnxCd1−xTe Single Crystals by H2O2(HNO3)–HBr–Organic Solvent Etchant Compositions Tomashik, Z. F.
2009
38 8 p. 1637-1644
artikel
9 Critical Thickness of Exponentially and Linearly Graded HgCdTe/CdZnTe Fulk, C.
2009
38 8 p. 1690-1697
artikel
10 Dye-Sensitized Solar Cells Combining ZnO Nanotip Arrays and Nonliquid Gel Electrolytes Chen, Hanhong
2009
38 8 p. 1612-1617
artikel
11 Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-Doped ZnO Thin Films Lennon, C.
2009
38 8 p. 1568-1573
artikel
12 Empirical Pseudopotential and Full-Brillouin-Zone k · p Electronic Structure of CdTe, HgTe, and Hg1−xCdxTe Penna, Michele
2009
38 8 p. 1717-1725
artikel
13 Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation Bertazzi, Francesco
2009
38 8 p. 1677-1683
artikel
14 Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes Derelle, S.
2009
38 8 p. 1628-1636
artikel
15 Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal Ballet, P.
2009
38 8 p. 1726-1732
artikel
16 Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)CdxTe on Si Substrates Vilela, M.F.
2009
38 8 p. 1755-1763
artikel
17 Foreword Sivananthan, S.
2009
38 8 p. 1521
artikel
18 Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes Jóźwikowski, K.
2009
38 8 p. 1666-1676
artikel
19 Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer Licausi, Nicholas
2009
38 8 p. 1600-1604
artikel
20 Growth of Thick Epitaxial CdTe Films by Close Space Sublimation Jiang, Q.
2009
38 8 p. 1548-1553
artikel
21 HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth Gravrand, O.
2009
38 8 p. 1684-1689
artikel
22 High-Operating-Temperature HgCdTe Avalanche Photodiodes Rothman, J.
2009
38 8 p. 1707-1716
artikel
23 Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films Zhao, Fanghai
2009
38 8 p. 1661-1665
artikel
24 In Situ Spectroscopic Ellipsometry of Rough Surfaces: Application to CdTe(211)B/Ge(211) Grown by Molecular-Beam Epitaxy Badano, Giacomo
2009
38 8 p. 1652-1660
artikel
25 Internal Electric Field Investigations of a Cadmium Zinc Telluride Detector Using Synchrotron X-ray Mapping and Pockels Effect Measurements Yang, G.
2009
38 8 p. 1563-1567
artikel
26 Magneto-optical Studies of Spin Phenomena in CdMnTe Doped with Co and Cr Shen, S.
2009
38 8 p. 1554-1557
artikel
27 Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer Rao, S.R.
2009
38 8 p. 1618-1623
artikel
28 Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy Wang, X. J.
2009
38 8 p. 1776-1780
artikel
29 Multifunctional ZnO-Based Thin-Film Bulk Acoustic Resonator for Biosensors Chen, Ying
2009
38 8 p. 1605-1611
artikel
30 Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators Jain, F. C.
2009
38 8 p. 1574-1578
artikel
31 Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode Beck, Jeffrey
2009
38 8 p. 1579-1592
artikel
32 Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation Mollard, L.
2009
38 8 p. 1805-1813
artikel
33 Plasma Passivation Etching for HgCdTe Stoltz, A. J.
2009
38 8 p. 1741-1745
artikel
34 Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates Reddy, M.
2009
38 8 p. 1764-1770
artikel
35 Spectral Response Model for Front-Side-Illuminated Detectors Robinson, E.
2009
38 8 p. 1624-1627
artikel
36 Strained and Unstrained Layer Superlattices for Infrared Detection Grein, C. H.
2009
38 8 p. 1800-1804
artikel
37 Structural Characterization of Integrated II–VI and III–V Heterostructures for Solar Cell Applications Zhang, X.
2009
38 8 p. 1558-1562
artikel
38 Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe Gravrand, O.
2009
38 8 p. 1733-1740
artikel
39 Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes Perrais, Gwladys
2009
38 8 p. 1790-1799
artikel
40 The Effect of Wet Etching on Surface Properties of HgCdTe Sporken, R.
2009
38 8 p. 1781-1789
artikel
41 Topography and Dislocations in (112)B HgCdTe/CdTe/Si Benson, J. D.
2009
38 8 p. 1771-1775
artikel
42 Vanadium-Doped Cadmium Manganese Telluride (Cd1−xMnxTe) Crystals as X- and Gamma-Ray Detectors Hossain, A.
2009
38 8 p. 1593-1599
artikel
                             42 gevonden resultaten
 
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