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99 results found

no	title	author	magazine	year	volume	issue	page(s)	type
1	Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications	Hullavarad, S. S.			35	4	p. 777-794	article
2	Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications	Hullavarad, S. S.		2006	35	4	p. 777-794	article
3	Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures	Elhamri, S.			35	4	p. 599-604	article
4	Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures	Elhamri, S.		2006	35	4	p. 599-604	article
5	Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN	Khanna, Rohit			35	4	p. 658-662	article
6	Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN	Khanna, Rohit		2006	35	4	p. 658-662	article
7	Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements	Galluppi, Massimo			35	4	p. 733-737	article
8	Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements	Galluppi, Massimo		2006	35	4	p. 733-737	article
9	Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN	Bogart, Katherine H. A.			35	4	p. 605-612	article
10	Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN	Bogart, Katherine H. A.		2006	35	4	p. 605-612	article
11	Catalyst-free growth of GaN nanowires	Bertness, K. A.			35	4	p. 576-580	article
12	Catalyst-free growth of GaN nanowires	Bertness, K. A.		2006	35	4	p. 576-580	article
13	Characterization of Ti schottky diodes on epi-regrown 4H-SiC	Zhu, Lin			35	4	p. 754-757	article
14	Characterization of Ti schottky diodes on epi-regrown 4H-SiC	Zhu, Lin		2006	35	4	p. 754-757	article
15	Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates	Anderson, T. J.			35	4	p. 675-679	article
16	Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates	Anderson, T. J.		2006	35	4	p. 675-679	article
17	Comparison of MOS capacitors on n- and p-type GaN	Huang, W.			35	4	p. 726-732	article
18	Comparison of MOS capacitors on n- and p-type GaN	Huang, W.		2006	35	4	p. 726-732	article
19	Digital etching of III-N materials using a two-step Ar/KOH technique	Keogh, David			35	4	p. 771-776	article
20	Digital etching of III-N materials using a two-step Ar/KOH technique	Keogh, David		2006	35	4	p. 771-776	article
21	Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films	Alivov, Y. I.			35	4	p. 520-524	article
22	Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films	Alivov, Y. I.		2006	35	4	p. 520-524	article
23	Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC	Das, Hrishikesh			35	4	p. 625-629	article
24	Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC	Das, Hrishikesh		2006	35	4	p. 625-629	article
25	Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots	Zhang, X. B.			35	4	p. 701-704	article
26	Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots	Zhang, X. B.		2006	35	4	p. 701-704	article
27	Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN	Ryu, Mee-Yi			35	4	p. 647-653	article
28	Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN	Ryu, Mee-Yi		2006	35	4	p. 647-653	article
29	Electrical properties of undoped bulk ZnO substrates	Polyakov, A. Y.			35	4	p. 663-669	article
30	Electrical properties of undoped bulk ZnO substrates	Polyakov, A. Y.		2006	35	4	p. 663-669	article
31	Electrical properties of ZnO Nano-particles embedded in polyimide	Kim, E. K.			35	4	p. 512-515	article
32	Electrical properties of ZnO Nano-particles embedded in polyimide	Kim, E. K.		2006	35	4	p. 512-515	article
33	Electrical transport properties of single GaN and InN nanowires	Chang, Chih-Yang			35	4	p. 738-743	article
34	Electrical transport properties of single GaN and InN nanowires	Chang, Chih-Yang		2006	35	4	p. 738-743	article
35	Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties	Umar, A.			35	4	p. 758-765	article
36	Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties	Umar, A.		2006	35	4	p. 758-765	article
37	Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C	Deng, Yanqing			35	4	p. 618-624	article
38	Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C	Deng, Yanqing		2006	35	4	p. 618-624	article
39	Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers	Cheng, Kai			35	4	p. 592-598	article
40	Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers	Cheng, Kai		2006	35	4	p. 592-598	article
41	Foreword	Mohney, Suzanne		2006	35	4	p. 511	article
42	Free carrier absorption and lattice vibrational modes in bulk ZnO	Emelie, P. Y.			35	4	p. 525-529	article
43	Free carrier absorption and lattice vibrational modes in bulk ZnO	Emelie, P. Y.		2006	35	4	p. 525-529	article
44	GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy	Kumtornkittikul, Chaiyasit			35	4	p. 744-749	article
45	GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy	Kumtornkittikul, Chaiyasit		2006	35	4	p. 744-749	article
46	Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates	Kasai, S.			35	4	p. 568-575	article
47	Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates	Kasai, S.		2006	35	4	p. 568-575	article
48	Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN	Fang, Z. -Q.			35	4	p. 613-617	article
49	Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN	Fang, Z. -Q.		2006	35	4	p. 613-617	article
50	Growth of AlGaN alloys exhibiting enhanced luminescence efficiency	Sampath, A. V.			35	4	p. 641-646	article
51	Growth of AlGaN alloys exhibiting enhanced luminescence efficiency	Sampath, A. V.		2006	35	4	p. 641-646	article
52	Growth of InGaN HBTs by MOCVD	Chung, Theodore			35	4	p. 695-700	article
53	Growth of InGaN HBTs by MOCVD	Chung, Theodore		2006	35	4	p. 695-700	article
54	High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures	Tao, Y. Q.			35	4	p. 722-725	article
55	High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures	Tao, Y. Q.		2006	35	4	p. 722-725	article
56	High-yield GaN nanowire synthesis and field-effect transistor fabrication	Wu, Huaqiang			35	4	p. 670-674	article
57	High-yield GaN nanowire synthesis and field-effect transistor fabrication	Wu, Huaqiang		2006	35	4	p. 670-674	article
58	Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry	Pritchett, David			35	4	p. 562-567	article
59	Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry	Pritchett, David		2006	35	4	p. 562-567	article
60	Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes	Lee, Wonseok			35	4	p. 587-591	article
61	Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes	Lee, Wonseok		2006	35	4	p. 587-591	article
62	Investigation of GaNxP1−x/GaP LED structure optical properties	Peternai, L.			35	4	p. 654-657	article
63	Investigation of GaNxP1−x/GaP LED structure optical properties	Peternai, L.		2006	35	4	p. 654-657	article
64	Metalorganic chemical vapor deposition and characterization of ZnO materials	Sun, Shangzu			35	4	p. 766-770	article
65	Metalorganic chemical vapor deposition and characterization of ZnO materials	Sun, Shangzu		2006	35	4	p. 766-770	article
66	Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices	Zhang, X. B.			35	4	p. 705-710	article
67	Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices	Zhang, X. B.		2006	35	4	p. 705-710	article
68	Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs	Moe, Craig G.			35	4	p. 750-753	article
69	Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs	Moe, Craig G.		2006	35	4	p. 750-753	article
70	Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping	Groenen, R.			35	4	p. 711-716	article
71	Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping	Groenen, R.		2006	35	4	p. 711-716	article
72	Photoluminescence properties of GaN with dislocations induced by plastic deformation	Yonenaga, Ichiro			35	4	p. 717-721	article
73	Photoluminescence properties of GaN with dislocations induced by plastic deformation	Yonenaga, Ichiro		2006	35	4	p. 717-721	article
74	Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO	Gopal, Priya			35	4	p. 538-542	article
75	Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO	Gopal, Priya		2006	35	4	p. 538-542	article
76	Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC	Chanda, S. K.			35	4	p. 630-634	article
77	Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC	Chanda, S. K.		2006	35	4	p. 630-634	article
78	Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition	Shim, W. Y.			35	4	p. 635-640	article
79	Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition	Shim, W. Y.		2006	35	4	p. 635-640	article
80	Schottky barrier formation at nonpolar Au/GaN epilayer interfaces	Walker, D. E.			35	4	p. 581-586	article
81	Schottky barrier formation at nonpolar Au/GaN epilayer interfaces	Walker, D. E.		2006	35	4	p. 581-586	article
82	Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO	Chen, Jau-Jiun			35	4	p. 516-519	article
83	Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO	Chen, Jau-Jiun		2006	35	4	p. 516-519	article
84	Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN	Hlad, M.			35	4	p. 680-684	article
85	Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN	Hlad, M.		2006	35	4	p. 680-684	article
86	Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer	Conley, John F.			35	4	p. 795-802	article
87	Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer	Conley, John F.		2006	35	4	p. 795-802	article
88	Si-diffused GaN for enhancement-mode GaN mosfet on si applications	Jang, Soohwan			35	4	p. 685-690	article
89	Si-diffused GaN for enhancement-mode GaN mosfet on si applications	Jang, Soohwan		2006	35	4	p. 685-690	article
90	Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition	Li, Y. J.			35	4		article
91	Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition	Li, Y. J.		2006	35	4	p. 530-537	article
92	Thermal conductivity of bulk ZnO after different thermal treatments	Özgür, Ü.			35	4	p. 550-555	article
93	Thermal conductivity of bulk ZnO after different thermal treatments	Özgür, Ü.		2006	35	4	p. 550-555	article
94	Trap-related photoconductivity in ZnO epilayers	Murphy, T. E.			35	4	p. 543-549	article
95	Trap-related photoconductivity in ZnO epilayers	Murphy, T. E.		2006	35	4	p. 543-549	article
96	Valency configuration of transition metal impurities in ZnO	Petit, L.			35	4	p. 556-561	article
97	Valency configuration of transition metal impurities in ZnO	Petit, L.		2006	35	4	p. 556-561	article
98	ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy	Xiu, F. X.			35	4	p. 691-694	article
99	ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy	Xiu, F. X.		2006	35	4	p. 691-694	article

99 results found

Koninklijke Bibliotheek - National Library of the Netherlands