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                             99 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications Hullavarad, S. S.
35 4 p. 777-794
 artikel
2 Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications Hullavarad, S. S.
 2006
 35 4 p. 777-794
 artikel
3 Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures Elhamri, S.
35 4 p. 599-604
 artikel
4 Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures Elhamri, S.
 2006
 35 4 p. 599-604
 artikel
5 Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN Khanna, Rohit
35 4 p. 658-662
 artikel
6 Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN Khanna, Rohit
 2006
 35 4 p. 658-662
 artikel
7 Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements Galluppi, Massimo
35 4 p. 733-737
 artikel
8 Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements Galluppi, Massimo
 2006
 35 4 p. 733-737
 artikel
9 Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN Bogart, Katherine H. A.
35 4 p. 605-612
 artikel
10 Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN Bogart, Katherine H. A.
 2006
 35 4 p. 605-612
 artikel
11 Catalyst-free growth of GaN nanowires Bertness, K. A.
35 4 p. 576-580
 artikel
12 Catalyst-free growth of GaN nanowires Bertness, K. A.
 2006
 35 4 p. 576-580
 artikel
13 Characterization of Ti schottky diodes on epi-regrown 4H-SiC Zhu, Lin
35 4 p. 754-757
 artikel
14 Characterization of Ti schottky diodes on epi-regrown 4H-SiC Zhu, Lin
 2006
 35 4 p. 754-757
 artikel
15 Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates Anderson, T. J.
35 4 p. 675-679
 artikel
16 Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates Anderson, T. J.
 2006
 35 4 p. 675-679
 artikel
17 Comparison of MOS capacitors on n- and p-type GaN Huang, W.
35 4 p. 726-732
 artikel
18 Comparison of MOS capacitors on n- and p-type GaN Huang, W.
 2006
 35 4 p. 726-732
 artikel
19 Digital etching of III-N materials using a two-step Ar/KOH technique Keogh, David
35 4 p. 771-776
 artikel
20 Digital etching of III-N materials using a two-step Ar/KOH technique Keogh, David
 2006
 35 4 p. 771-776
 artikel
21 Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films Alivov, Y. I.
35 4 p. 520-524
 artikel
22 Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films Alivov, Y. I.
 2006
 35 4 p. 520-524
 artikel
23 Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC Das, Hrishikesh
35 4 p. 625-629
 artikel
24 Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC Das, Hrishikesh
 2006
 35 4 p. 625-629
 artikel
25 Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots Zhang, X. B.
35 4 p. 701-704
 artikel
26 Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots Zhang, X. B.
 2006
 35 4 p. 701-704
 artikel
27 Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN Ryu, Mee-Yi
35 4 p. 647-653
 artikel
28 Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN Ryu, Mee-Yi
 2006
 35 4 p. 647-653
 artikel
29 Electrical properties of undoped bulk ZnO substrates Polyakov, A. Y.
35 4 p. 663-669
 artikel
30 Electrical properties of undoped bulk ZnO substrates Polyakov, A. Y.
 2006
 35 4 p. 663-669
 artikel
31 Electrical properties of ZnO Nano-particles embedded in polyimide Kim, E. K.
35 4 p. 512-515
 artikel
32 Electrical properties of ZnO Nano-particles embedded in polyimide Kim, E. K.
 2006
 35 4 p. 512-515
 artikel
33 Electrical transport properties of single GaN and InN nanowires Chang, Chih-Yang
35 4 p. 738-743
 artikel
34 Electrical transport properties of single GaN and InN nanowires Chang, Chih-Yang
 2006
 35 4 p. 738-743
 artikel
35 Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties Umar, A.
35 4 p. 758-765
 artikel
36 Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties Umar, A.
 2006
 35 4 p. 758-765
 artikel
37 Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C Deng, Yanqing
35 4 p. 618-624
 artikel
38 Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C Deng, Yanqing
 2006
 35 4 p. 618-624
 artikel
39 Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers Cheng, Kai
35 4 p. 592-598
 artikel
40 Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers Cheng, Kai
 2006
 35 4 p. 592-598
 artikel
41 Foreword Mohney, Suzanne
 2006
 35 4 p. 511
 artikel
42 Free carrier absorption and lattice vibrational modes in bulk ZnO Emelie, P. Y.
35 4 p. 525-529
 artikel
43 Free carrier absorption and lattice vibrational modes in bulk ZnO Emelie, P. Y.
 2006
 35 4 p. 525-529
 artikel
44 GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy Kumtornkittikul, Chaiyasit
35 4 p. 744-749
 artikel
45 GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy Kumtornkittikul, Chaiyasit
 2006
 35 4 p. 744-749
 artikel
46 Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates Kasai, S.
35 4 p. 568-575
 artikel
47 Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates Kasai, S.
 2006
 35 4 p. 568-575
 artikel
48 Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN Fang, Z. -Q.
35 4 p. 613-617
 artikel
49 Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN Fang, Z. -Q.
 2006
 35 4 p. 613-617
 artikel
50 Growth of AlGaN alloys exhibiting enhanced luminescence efficiency Sampath, A. V.
35 4 p. 641-646
 artikel
51 Growth of AlGaN alloys exhibiting enhanced luminescence efficiency Sampath, A. V.
 2006
 35 4 p. 641-646
 artikel
52 Growth of InGaN HBTs by MOCVD Chung, Theodore
35 4 p. 695-700
 artikel
53 Growth of InGaN HBTs by MOCVD Chung, Theodore
 2006
 35 4 p. 695-700
 artikel
54 High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures Tao, Y. Q.
35 4 p. 722-725
 artikel
55 High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures Tao, Y. Q.
 2006
 35 4 p. 722-725
 artikel
56 High-yield GaN nanowire synthesis and field-effect transistor fabrication Wu, Huaqiang
35 4 p. 670-674
 artikel
57 High-yield GaN nanowire synthesis and field-effect transistor fabrication Wu, Huaqiang
 2006
 35 4 p. 670-674
 artikel
58 Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry Pritchett, David
35 4 p. 562-567
 artikel
59 Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry Pritchett, David
 2006
 35 4 p. 562-567
 artikel
60 Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes Lee, Wonseok
35 4 p. 587-591
 artikel
61 Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes Lee, Wonseok
 2006
 35 4 p. 587-591
 artikel
62 Investigation of GaNxP1−x/GaP LED structure optical properties Peternai, L.
35 4 p. 654-657
 artikel
63 Investigation of GaNxP1−x/GaP LED structure optical properties Peternai, L.
 2006
 35 4 p. 654-657
 artikel
64 Metalorganic chemical vapor deposition and characterization of ZnO materials Sun, Shangzu
35 4 p. 766-770
 artikel
65 Metalorganic chemical vapor deposition and characterization of ZnO materials Sun, Shangzu
 2006
 35 4 p. 766-770
 artikel
66 Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices Zhang, X. B.
35 4 p. 705-710
 artikel
67 Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices Zhang, X. B.
 2006
 35 4 p. 705-710
 artikel
68 Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Moe, Craig G.
35 4 p. 750-753
 artikel
69 Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Moe, Craig G.
 2006
 35 4 p. 750-753
 artikel
70 Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping Groenen, R.
35 4 p. 711-716
 artikel
71 Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping Groenen, R.
 2006
 35 4 p. 711-716
 artikel
72 Photoluminescence properties of GaN with dislocations induced by plastic deformation Yonenaga, Ichiro
35 4 p. 717-721
 artikel
73 Photoluminescence properties of GaN with dislocations induced by plastic deformation Yonenaga, Ichiro
 2006
 35 4 p. 717-721
 artikel
74 Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO Gopal, Priya
35 4 p. 538-542
 artikel
75 Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO Gopal, Priya
 2006
 35 4 p. 538-542
 artikel
76 Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC Chanda, S. K.
35 4 p. 630-634
 artikel
77 Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC Chanda, S. K.
 2006
 35 4 p. 630-634
 artikel
78 Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition Shim, W. Y.
35 4 p. 635-640
 artikel
79 Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition Shim, W. Y.
 2006
 35 4 p. 635-640
 artikel
80 Schottky barrier formation at nonpolar Au/GaN epilayer interfaces Walker, D. E.
35 4 p. 581-586
 artikel
81 Schottky barrier formation at nonpolar Au/GaN epilayer interfaces Walker, D. E.
 2006
 35 4 p. 581-586
 artikel
82 Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO Chen, Jau-Jiun
35 4 p. 516-519
 artikel
83 Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO Chen, Jau-Jiun
 2006
 35 4 p. 516-519
 artikel
84 Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Hlad, M.
35 4 p. 680-684
 artikel
85 Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Hlad, M.
 2006
 35 4 p. 680-684
 artikel
86 Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer Conley, John F.
35 4 p. 795-802
 artikel
87 Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer Conley, John F.
 2006
 35 4 p. 795-802
 artikel
88 Si-diffused GaN for enhancement-mode GaN mosfet on si applications Jang, Soohwan
35 4 p. 685-690
 artikel
89 Si-diffused GaN for enhancement-mode GaN mosfet on si applications Jang, Soohwan
 2006
 35 4 p. 685-690
 artikel
90 Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Li, Y. J.
35 4 artikel
91 Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Li, Y. J.
 2006
 35 4 p. 530-537
 artikel
92 Thermal conductivity of bulk ZnO after different thermal treatments Özgür, Ü.
35 4 p. 550-555
 artikel
93 Thermal conductivity of bulk ZnO after different thermal treatments Özgür, Ü.
 2006
 35 4 p. 550-555
 artikel
94 Trap-related photoconductivity in ZnO epilayers Murphy, T. E.
35 4 p. 543-549
 artikel
95 Trap-related photoconductivity in ZnO epilayers Murphy, T. E.
 2006
 35 4 p. 543-549
 artikel
96 Valency configuration of transition metal impurities in ZnO Petit, L.
35 4 p. 556-561
 artikel
97 Valency configuration of transition metal impurities in ZnO Petit, L.
 2006
 35 4 p. 556-561
 artikel
98 ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy Xiu, F. X.
35 4 p. 691-694
 artikel
99 ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy Xiu, F. X.
 2006
 35 4 p. 691-694
 artikel
                             99 gevonden resultaten
 
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