| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al-enhanced PECVD SiNx induced hydrogen passivation in string ribbon silicon
|
Yelundur, V.
|
|
2001
|
30 |
5 |
p. 526-531
|
artikel
|
| 2 |
Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices
|
Yoon, Dong-Soo
|
|
|
30 |
5 |
p. 493-502
|
artikel
|
| 3 |
Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices
|
Yoon, Dong-Soo
|
|
2001
|
30 |
5 |
p. 493-502
|
artikel
|
| 4 |
Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
|
Chen, J. F.
|
|
2001
|
30 |
5 |
p. 487-492
|
artikel
|
| 5 |
Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
|
Chen, J. F.
|
|
|
30 |
5 |
p. 487-492
|
artikel
|
| 6 |
Characterization of nano-wear mechanisms of hard disk coatings
|
Kim, Woo Seok
|
|
|
30 |
5 |
p. 503-512
|
artikel
|
| 7 |
Characterization of nano-wear mechanisms of hard disk coatings
|
Kim, Woo Seok
|
|
2001
|
30 |
5 |
p. 503-512
|
artikel
|
| 8 |
Characterization of the CH4/H2/Ar high density plasma etching process for ZnSe
|
Eddy, C. R.
|
|
2001
|
30 |
5 |
p. 538-542
|
artikel
|
| 9 |
Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)
|
Sanchez, A. M.
|
|
2001
|
30 |
5 |
p. L17-L20
|
artikel
|
| 10 |
Effects of mismatch strain and alloy composition on the formation of InAs islands on InAlAs templates
|
Cordier, Y.
|
|
2001
|
30 |
5 |
p. 453-458
|
artikel
|
| 11 |
Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces
|
Borgström, M.
|
|
2001
|
30 |
5 |
p. 482-486
|
artikel
|
| 12 |
Enhanced dielectric properties of Zr−Sn−Ti oxynitride thin films
|
Lu, X. B.
|
|
2001
|
30 |
5 |
p. 554-557
|
artikel
|
| 13 |
Foreword
|
Bandyopadhyay, Supriyo
|
|
2001
|
30 |
5 |
p. 447
|
artikel
|
| 14 |
Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates
|
Ryou, Jae-Hyun
|
|
2001
|
30 |
5 |
p. 471-476
|
artikel
|
| 15 |
Influence of alloy composition on fillet-lifting phenomenon in tin binary alloys
|
Takao, H.
|
|
2001
|
30 |
5 |
p. 513-520
|
artikel
|
| 16 |
Influence of alloy composition on fillet-lifting phenomenon in tin binary alloys
|
Takao, H.
|
|
|
30 |
5 |
p. 513-520
|
artikel
|
| 17 |
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
|
Ledentsov, N. N.
|
|
2001
|
30 |
5 |
p. 463-470
|
artikel
|
| 18 |
Investigation of carrier relaxation dynamics in single CdSe/ZnSe self-organized quantum dot by time-resolved micro-photoluminescence
|
Ota, Takeshi
|
|
|
30 |
5 |
p. 448-452
|
artikel
|
| 19 |
Investigation of carrier relaxation dynamics in single CdSe/ZnSe self-organized quantum dot by time-resolved micro-photoluminescence
|
Ota, Takeshi
|
|
2001
|
30 |
5 |
p. 448-452
|
artikel
|
| 20 |
Laser-assisted via hole metallization in PCB materials
|
Kordás, K.
|
|
2001
|
30 |
5 |
p. L21-L24
|
artikel
|
| 21 |
Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature
|
Lin, Yow-Jon
|
|
2001
|
30 |
5 |
p. 532-537
|
artikel
|
| 22 |
1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis
|
Egorov, A. Yu.
|
|
2001
|
30 |
5 |
p. 477-481
|
artikel
|
| 23 |
Photoluminescence of InAs quantum dots coupled to a two-dimensional electron gas
|
Luo, Y. H.
|
|
2001
|
30 |
5 |
p. 459-462
|
artikel
|
| 24 |
Wettability of electroless Ni in the under bump metallurgy with lead free solder
|
Young, Bi-Lian
|
|
2001
|
30 |
5 |
p. 543-553
|
artikel
|
| 25 |
Wetting reaction of Sn-Ag based solder systems on Cu substrates plated with Au and/or Pd layer
|
Liu, C. Y.
|
|
2001
|
30 |
5 |
p. 521-525
|
artikel
|
| 26 |
Wetting reaction of Sn-Ag based solder systems on Cu substrates plated with Au and/or Pd layer
|
Liu, C. Y.
|
|
|
30 |
5 |
p. 521-525
|
artikel
|
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