| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy
|
Savolainen, P.
|
|
|
28 |
8 |
p. 980-985
|
artikel
|
| 2 |
AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy
|
Savolainen, P.
|
|
1999
|
28 |
8 |
p. 980-985
|
artikel
|
| 3 |
Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well
|
Guillot, C.
|
|
|
28 |
8 |
p. 975-979
|
artikel
|
| 4 |
Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well
|
Guillot, C.
|
|
1999
|
28 |
8 |
p. 975-979
|
artikel
|
| 5 |
Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor
|
Kim, Sun Jung
|
|
|
28 |
8 |
p. 970-974
|
artikel
|
| 6 |
Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor
|
Kim, Sun Jung
|
|
1999
|
28 |
8 |
p. 970-974
|
artikel
|
| 7 |
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
|
Fang, Z-Q.
|
|
|
28 |
8 |
p. L13-L16
|
artikel
|
| 8 |
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
|
Fang, Z-Q.
|
|
1999
|
28 |
8 |
p. L13-L16
|
artikel
|
| 9 |
Lateral diffusion effects in AuGe based source-drain contacts to AllnAs/InGaAs/InP doped channel MODFETs
|
Iliadis, A. A.
|
|
|
28 |
8 |
p. 944-948
|
artikel
|
| 10 |
Lateral diffusion effects in AuGe based source-drain contacts to AllnAs/InGaAs/InP doped channel MODFETs
|
Iliadis, A. A.
|
|
1999
|
28 |
8 |
p. 944-948
|
artikel
|
| 11 |
Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth
|
Lee, R. T.
|
|
|
28 |
8 |
p. 963-969
|
artikel
|
| 12 |
Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth
|
Lee, R. T.
|
|
1999
|
28 |
8 |
p. 963-969
|
artikel
|
| 13 |
Reaction of aluminum-on-titanium bilayer with GaN: Influence of the Al:Ti atomic ratio
|
Gasser, S. M.
|
|
|
28 |
8 |
p. 949-954
|
artikel
|
| 14 |
Reaction of aluminum-on-titanium bilayer with GaN: Influence of the Al:Ti atomic ratio
|
Gasser, S. M.
|
|
1999
|
28 |
8 |
p. 949-954
|
artikel
|
| 15 |
Solid source MBE growth of InAsP/InP quantum wells
|
Dagnall, Georgiana
|
|
|
28 |
8 |
p. 933-938
|
artikel
|
| 16 |
Solid source MBE growth of InAsP/InP quantum wells
|
Dagnall, Georgiana
|
|
1999
|
28 |
8 |
p. 933-938
|
artikel
|
| 17 |
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
|
Mishurnyi, V. A.
|
|
|
28 |
8 |
p. 959-962
|
artikel
|
| 18 |
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
|
Mishurnyi, V. A.
|
|
1999
|
28 |
8 |
p. 959-962
|
artikel
|
| 19 |
The ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe
|
Kim, Dae-Woo
|
|
|
28 |
8 |
p. 939-943
|
artikel
|
| 20 |
The ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe
|
Kim, Dae-Woo
|
|
1999
|
28 |
8 |
p. 939-943
|
artikel
|
| 21 |
The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices
|
Seaford, M. L.
|
|
|
28 |
8 |
p. 955-958
|
artikel
|
| 22 |
The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices
|
Seaford, M. L.
|
|
1999
|
28 |
8 |
p. 955-958
|
artikel
|
| 23 |
X-ray photoelectron spectroscopy and electrical properties studies of Nb-doped strontium titanate ceramics prepared from titanyl acylate precursors
|
Yang, Wein-Duo
|
|
|
28 |
8 |
p. 986-995
|
artikel
|
| 24 |
X-ray photoelectron spectroscopy and electrical properties studies of Nb-doped strontium titanate ceramics prepared from titanyl acylate precursors
|
Yang, Wein-Duo
|
|
1999
|
28 |
8 |
p. 986-995
|
artikel
|
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