| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer
|
Schäfer, J.
|
|
|
28 |
7 |
p. 881-886
|
artikel
|
| 2 |
Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer
|
Schäfer, J.
|
|
1999
|
28 |
7 |
p. 881-886
|
artikel
|
| 3 |
Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy
|
Ren, Y.
|
|
|
28 |
7 |
p. 887-893
|
artikel
|
| 4 |
Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy
|
Ren, Y.
|
|
1999
|
28 |
7 |
p. 887-893
|
artikel
|
| 5 |
Electric current effects on Sn/Ag interfacial reactions
|
Chen, Chin-Ming
|
|
|
28 |
7 |
p. 902-906
|
artikel
|
| 6 |
Electric current effects on Sn/Ag interfacial reactions
|
Chen, Chin-Ming
|
|
1999
|
28 |
7 |
p. 902-906
|
artikel
|
| 7 |
Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures
|
Tamura, Wataru
|
|
|
28 |
7 |
p. 907-911
|
artikel
|
| 8 |
Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures
|
Tamura, Wataru
|
|
1999
|
28 |
7 |
p. 907-911
|
artikel
|
| 9 |
Estimation of the thermal band gap of a semiconductor from seebeck measurements
|
Goldsmid, H. J.
|
|
|
28 |
7 |
p. 869-872
|
artikel
|
| 10 |
Estimation of the thermal band gap of a semiconductor from seebeck measurements
|
Goldsmid, H. J.
|
|
1999
|
28 |
7 |
p. 869-872
|
artikel
|
| 11 |
Forming solder joints by sintering eutectic tin-lead solder paste
|
Palmer, Mark A.
|
|
1999
|
28 |
7 |
p. 912-915
|
artikel
|
| 12 |
Low temperature MBE of GaAs: A theoretical investigation of RHEED Oscillations
|
Natarajan, K.
|
|
|
28 |
7 |
p. 926-931
|
artikel
|
| 13 |
Low temperature MBE of GaAs: A theoretical investigation of RHEED Oscillations
|
Natarajan, K.
|
|
1999
|
28 |
7 |
p. 926-931
|
artikel
|
| 14 |
Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium
|
Stockman, S. A.
|
|
|
28 |
7 |
p. 916-925
|
artikel
|
| 15 |
Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium
|
Stockman, S. A.
|
|
1999
|
28 |
7 |
p. 916-925
|
artikel
|
| 16 |
Phase equilibria in In-Metal-As systems: Systematic trends in phase diagram topology and implications for the development of contact materials to InAs
|
Swenson, D.
|
|
|
28 |
7 |
p. 894-901
|
artikel
|
| 17 |
Phase equilibria in In-Metal-As systems: Systematic trends in phase diagram topology and implications for the development of contact materials to InAs
|
Swenson, D.
|
|
1999
|
28 |
7 |
p. 894-901
|
artikel
|
| 18 |
Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates
|
Seaford, M. L.
|
|
|
28 |
7 |
p. 878-880
|
artikel
|
| 19 |
Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates
|
Seaford, M. L.
|
|
1999
|
28 |
7 |
p. 878-880
|
artikel
|
| 20 |
Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy
|
Bae, In-Tae
|
|
|
28 |
7 |
p. 873-877
|
artikel
|
| 21 |
Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy
|
Bae, In-Tae
|
|
1999
|
28 |
7 |
p. 873-877
|
artikel
|
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