| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications
|
Bera, L. K.
|
|
|
28 |
2 |
p. 98-104
|
artikel
|
| 2 |
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications
|
Bera, L. K.
|
|
1999
|
28 |
2 |
p. 98-104
|
artikel
|
| 3 |
Impurity incorporation and the surface morphology of MOVPE grown GaAs
|
Li, Jiang
|
|
|
28 |
2 |
p. 124-133
|
artikel
|
| 4 |
Impurity incorporation and the surface morphology of MOVPE grown GaAs
|
Li, Jiang
|
|
1999
|
28 |
2 |
p. 124-133
|
artikel
|
| 5 |
Interfacial reactions between liquid indium and nickel substrate
|
Tseng, Y. H.
|
|
|
28 |
2 |
p. 105-108
|
artikel
|
| 6 |
Interfacial reactions between liquid indium and nickel substrate
|
Tseng, Y. H.
|
|
1999
|
28 |
2 |
p. 105-108
|
artikel
|
| 7 |
New plasma chemistries for etching III–V compound semiconductors: Bl3 and BBr3
|
Maeda, Takeshi
|
|
|
28 |
2 |
p. 118-123
|
artikel
|
| 8 |
New plasma chemistries for etching III–V compound semiconductors: Bl3 and BBr3
|
Maeda, Takeshi
|
|
1999
|
28 |
2 |
p. 118-123
|
artikel
|
| 9 |
Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
|
Kerboeuf, S.
|
|
|
28 |
2 |
p. 83-90
|
artikel
|
| 10 |
Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
|
Kerboeuf, S.
|
|
1999
|
28 |
2 |
p. 83-90
|
artikel
|
| 11 |
SIMS analysis of nitrided oxides grown on 4H-SiC
|
Tanner, P.
|
|
|
28 |
2 |
p. 109-111
|
artikel
|
| 12 |
SIMS analysis of nitrided oxides grown on 4H-SiC
|
Tanner, P.
|
|
1999
|
28 |
2 |
p. 109-111
|
artikel
|
| 13 |
Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature
|
Rodríguez, A.
|
|
|
28 |
2 |
p. 77-82
|
artikel
|
| 14 |
Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature
|
Rodríguez, A.
|
|
1999
|
28 |
2 |
p. 77-82
|
artikel
|
| 15 |
The structural changes in CdS-CdTe thin films due to annealing
|
Rogers, K. D.
|
|
|
28 |
2 |
p. 112-117
|
artikel
|
| 16 |
The structural changes in CdS-CdTe thin films due to annealing
|
Rogers, K. D.
|
|
1999
|
28 |
2 |
p. 112-117
|
artikel
|
| 17 |
Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport
|
Ge, Yu-Ru
|
|
|
28 |
2 |
p. 91-97
|
artikel
|
| 18 |
Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport
|
Ge, Yu-Ru
|
|
1999
|
28 |
2 |
p. 91-97
|
artikel
|
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