| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Achievement of homogeneous AuSn solder by pulsed laser-assisted deposition
|
Belouet, C.
|
|
|
28 |
10 |
p. 1123-1126
|
artikel
|
| 2 |
Achievement of homogeneous AuSn solder by pulsed laser-assisted deposition
|
Belouet, C.
|
|
1999
|
28 |
10 |
p. 1123-1126
|
artikel
|
| 3 |
Arsenic incorporation in InAsP/InP quantum wells
|
Dagnall, G.
|
|
|
28 |
10 |
p. 1108-1110
|
artikel
|
| 4 |
Arsenic incorporation in InAsP/InP quantum wells
|
Dagnall, G.
|
|
1999
|
28 |
10 |
p. 1108-1110
|
artikel
|
| 5 |
A simple wet etch for GaN
|
Bardwell, J. A.
|
|
|
28 |
10 |
p. L24-L26
|
artikel
|
| 6 |
A simple wet etch for GaN
|
Bardwell, J. A.
|
|
1999
|
28 |
10 |
p. L24-L26
|
artikel
|
| 7 |
Development of stress/strain curves for 80In15Pb5Ag
|
Edwards, L. K.
|
|
|
28 |
10 |
p. 1084-1087
|
artikel
|
| 8 |
Development of stress/strain curves for 80In15Pb5Ag
|
Edwards, L. K.
|
|
1999
|
28 |
10 |
p. 1084-1087
|
artikel
|
| 9 |
Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
|
Yang, Chien-Cheng
|
|
|
28 |
10 |
p. 1096-1100
|
artikel
|
| 10 |
Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
|
Yang, Chien-Cheng
|
|
1999
|
28 |
10 |
p. 1096-1100
|
artikel
|
| 11 |
Epitaxial growth of zinc-blende AIN on Si(100) substrates by plasma source molecular beam epitaxy
|
Thompson, Margarita P.
|
|
|
28 |
10 |
p. L17-L19
|
artikel
|
| 12 |
Epitaxial growth of zinc-blende AIN on Si(100) substrates by plasma source molecular beam epitaxy
|
Thompson, Margarita P.
|
|
1999
|
28 |
10 |
p. L17-L19
|
artikel
|
| 13 |
Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates
|
Kim, Eun-Ha
|
|
|
28 |
10 |
p. L20-L23
|
artikel
|
| 14 |
Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates
|
Kim, Eun-Ha
|
|
1999
|
28 |
10 |
p. L20-L23
|
artikel
|
| 15 |
Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry
|
Cui, Hao
|
|
|
28 |
10 |
p. 1111-1114
|
artikel
|
| 16 |
Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry
|
Cui, Hao
|
|
1999
|
28 |
10 |
p. 1111-1114
|
artikel
|
| 17 |
Photoluminescences from AlxGa1−xP liquid phase epitaxial layers
|
Yu, T. J.
|
|
|
28 |
10 |
p. 1101-1107
|
artikel
|
| 18 |
Photoluminescences from AlxGa1−xP liquid phase epitaxial layers
|
Yu, T. J.
|
|
1999
|
28 |
10 |
p. 1101-1107
|
artikel
|
| 19 |
Planar optical waveguides prepared in GIL49 and BK7 glass substrates by K+-Na+ ion exchange with the electric field assistance
|
Kosikova, Jitka
|
|
|
28 |
10 |
p. 1088-1095
|
artikel
|
| 20 |
Planar optical waveguides prepared in GIL49 and BK7 glass substrates by K+-Na+ ion exchange with the electric field assistance
|
Kosikova, Jitka
|
|
1999
|
28 |
10 |
p. 1088-1095
|
artikel
|
| 21 |
Properties of ternary Sn-Ag-Bi solder alloys: Part II—Wettability and mechanical properties analyses
|
Vianco, P. T.
|
|
|
28 |
10 |
p. 1138-1143
|
artikel
|
| 22 |
Properties of ternary Sn-Ag-Bi solder alloys: Part II—Wettability and mechanical properties analyses
|
Vianco, P. T.
|
|
1999
|
28 |
10 |
p. 1138-1143
|
artikel
|
| 23 |
Properties of ternary Sn-Ag-Bi solder alloys: Part I—Thermal properties and microstructural analysis
|
Vianco, P. T.
|
|
|
28 |
10 |
p. 1127-1137
|
artikel
|
| 24 |
Properties of ternary Sn-Ag-Bi solder alloys: Part I—Thermal properties and microstructural analysis
|
Vianco, P. T.
|
|
1999
|
28 |
10 |
p. 1127-1137
|
artikel
|
| 25 |
Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy
|
Fang, Z-Q.
|
|
|
28 |
10 |
p. L27-L30
|
artikel
|
| 26 |
Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy
|
Fang, Z-Q.
|
|
1999
|
28 |
10 |
p. L27-L30
|
artikel
|
| 27 |
Silicide formation in co-deposited TiSix layers: The effect of deposition temperature and Mo
|
Ohmi, S.
|
|
|
28 |
10 |
p. 1115-1122
|
artikel
|
| 28 |
Silicide formation in co-deposited TiSix layers: The effect of deposition temperature and Mo
|
Ohmi, S.
|
|
1999
|
28 |
10 |
p. 1115-1122
|
artikel
|
| 29 |
X-Ray diffraction analysis of bandgap-engineered distributed bragg reflectors
|
Patterson, S. G.
|
|
|
28 |
10 |
p. 1081-1083
|
artikel
|
| 30 |
X-Ray diffraction analysis of bandgap-engineered distributed bragg reflectors
|
Patterson, S. G.
|
|
1999
|
28 |
10 |
p. 1081-1083
|
artikel
|
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