| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Effect of dissolved oxygen on thermal oxidation in Ta2O5/Ta sandwiches
|
Pozdeev-Freeman, Yu.
|
|
|
27 |
9 |
p. 1034-1037
|
artikel
|
| 2 |
Effect of dissolved oxygen on thermal oxidation in Ta2O5/Ta sandwiches
|
Pozdeev-Freeman, Yu.
|
|
1998
|
27 |
9 |
p. 1034-1037
|
artikel
|
| 3 |
Green light emissions from GaP-AlxGa1−xP double heterostructures
|
Tongjun, Yu
|
|
|
27 |
9 |
p. 1053-1058
|
artikel
|
| 4 |
Green light emissions from GaP-AlxGa1−xP double heterostructures
|
Tongjun, Yu
|
|
1998
|
27 |
9 |
p. 1053-1058
|
artikel
|
| 5 |
Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors
|
Knoll, D.
|
|
|
27 |
9 |
p. 1022-1026
|
artikel
|
| 6 |
Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors
|
Knoll, D.
|
|
1998
|
27 |
9 |
p. 1022-1026
|
artikel
|
| 7 |
Infrared materials for thermophotovoltaic applications
|
Charache, G. W.
|
|
|
27 |
9 |
p. 1038-1042
|
artikel
|
| 8 |
Infrared materials for thermophotovoltaic applications
|
Charache, G. W.
|
|
1998
|
27 |
9 |
p. 1038-1042
|
artikel
|
| 9 |
In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers
|
Li, G.
|
|
|
27 |
9 |
p. L61-L63
|
artikel
|
| 10 |
In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers
|
Li, G.
|
|
1998
|
27 |
9 |
p. L61-L63
|
artikel
|
| 11 |
Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy
|
Rujirawat, S.
|
|
|
27 |
9 |
p. 1047-1052
|
artikel
|
| 12 |
Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy
|
Rujirawat, S.
|
|
1998
|
27 |
9 |
p. 1047-1052
|
artikel
|
| 13 |
Performance characterization of InGaP Schottky contact with ITO transparent electrodes
|
Lee, Ching-Ting
|
|
|
27 |
9 |
p. 1017-1021
|
artikel
|
| 14 |
Performance characterization of InGaP Schottky contact with ITO transparent electrodes
|
Lee, Ching-Ting
|
|
1998
|
27 |
9 |
p. 1017-1021
|
artikel
|
| 15 |
Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut
|
Lu, Xiang
|
|
|
27 |
9 |
p. 1059-1066
|
artikel
|
| 16 |
Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut
|
Lu, Xiang
|
|
1998
|
27 |
9 |
p. 1059-1066
|
artikel
|
| 17 |
Scanning force microscopy studies of GaAs films grown on offcut Ge substrates
|
Xu, Q.
|
|
|
27 |
9 |
p. 1010-1016
|
artikel
|
| 18 |
Scanning force microscopy studies of GaAs films grown on offcut Ge substrates
|
Xu, Q.
|
|
1998
|
27 |
9 |
p. 1010-1016
|
artikel
|
| 19 |
Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
|
Kitada, Takahiro
|
|
|
27 |
9 |
p. 1043-1046
|
artikel
|
| 20 |
Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
|
Kitada, Takahiro
|
|
1998
|
27 |
9 |
p. 1043-1046
|
artikel
|
| 21 |
The excition tunneling in ZnCdSe/ZnSe asymmetric double quantum well
|
Yu, Guangyou
|
|
|
27 |
9 |
p. 1007-1009
|
artikel
|
| 22 |
The excition tunneling in ZnCdSe/ZnSe asymmetric double quantum well
|
Yu, Guangyou
|
|
1998
|
27 |
9 |
p. 1007-1009
|
artikel
|
| 23 |
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
|
Wellmann, P. J.
|
|
|
27 |
9 |
p. 1030-1033
|
artikel
|
| 24 |
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
|
Wellmann, P. J.
|
|
1998
|
27 |
9 |
p. 1030-1033
|
artikel
|
| 25 |
Ultra-shallow P+/N junctions formed by recoil implantation
|
Liu, Henley L.
|
|
|
27 |
9 |
p. 1027-1029
|
artikel
|
| 26 |
Ultra-shallow P+/N junctions formed by recoil implantation
|
Liu, Henley L.
|
|
1998
|
27 |
9 |
p. 1027-1029
|
artikel
|
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