| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Atomic and molecular photostimulated desorption from complex ionic crystals
|
Beck, Kenneth M.
|
|
1997
|
26 |
11 |
p. 1335-1341
|
artikel
|
| 2 |
Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas
|
Lee, J. W.
|
|
1997
|
26 |
11 |
p. 1314-1319
|
artikel
|
| 3 |
Comparison of ECR plasma chemistries for etching of InGaP and AlGaP
|
Hong, J.
|
|
1997
|
26 |
11 |
p. 1303-1309
|
artikel
|
| 4 |
Deposition of diamond from alcohol precursors in an electron cyclotron resonance plasma system
|
Gilbert, Donald R.
|
|
1997
|
26 |
11 |
p. 1326-1330
|
artikel
|
| 5 |
Effect of dry etching on surface properties of III-nitrides
|
Ren, F.
|
|
1997
|
26 |
11 |
p. 1287-1291
|
artikel
|
| 6 |
Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGap
|
Lee, K. N.
|
|
1997
|
26 |
11 |
p. 1279-1282
|
artikel
|
| 7 |
Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications
|
Jung, K. B.
|
|
1997
|
26 |
11 |
p. 1310-1313
|
artikel
|
| 8 |
Evolution of grain structure in thin film reactions
|
Barmak, K.
|
|
1997
|
26 |
11 |
p. 1370
|
artikel
|
| 9 |
Foreword
|
Kumar, D.
|
|
1997
|
26 |
11 |
p. 1265
|
artikel
|
| 10 |
Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process
|
Eddy, C. R.
|
|
1997
|
26 |
11 |
p. 1320-1325
|
artikel
|
| 11 |
Inductively coupled plasma assisted physical vapor deposition of titanium nitride coatings
|
Meng, W. J.
|
|
1997
|
26 |
11 |
p. 1297-1302
|
artikel
|
| 12 |
Ion beam-assisted planarization of chemically vapor deposited diamond thin films using electron cyclotron resonance plasma
|
Lee, Dong-Gu
|
|
1997
|
26 |
11 |
p. 1365-1369
|
artikel
|
| 13 |
Low energy ion beam assisted grain size evolution in thin film deposition
|
Rajan, Krishna
|
|
1997
|
26 |
11 |
p. 1270-1273
|
artikel
|
| 14 |
Methods of defect-engineering shallow junctions formed by B+-implantation in Si
|
Roth, E. G.
|
|
1997
|
26 |
11 |
p. 1349-1354
|
artikel
|
| 15 |
Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs
|
Goldman, R. S.
|
|
1997
|
26 |
11 |
p. 1342-1348
|
artikel
|
| 16 |
Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy
|
Mackenzie, J. D.
|
|
1997
|
26 |
11 |
p. 1266-1269
|
artikel
|
| 17 |
Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates
|
Caballero, J. A.
|
|
1997
|
26 |
11 |
p. 1274-1278
|
artikel
|
| 18 |
Sputter deposition of phosphors for electroluminescent flat panel displays
|
Davidson, Mark R.
|
|
1997
|
26 |
11 |
p. 1355-1360
|
artikel
|
| 19 |
Synthesis of the PZT films deposited on pt-coated (100) Si substrates for nonvolatile memory applications
|
Kumar, Ashok
|
|
1997
|
26 |
11 |
p. 1331-1334
|
artikel
|
| 20 |
The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon
|
Jones, K. S.
|
|
1997
|
26 |
11 |
p. 1361-1364
|
artikel
|
| 21 |
Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy
|
Antonell, M. J.
|
|
1997
|
26 |
11 |
p. 1283-1286
|
artikel
|
| 22 |
The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy
|
Donovan, S. M.
|
|
1997
|
26 |
11 |
p. 1292-1296
|
artikel
|
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