| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy
|
Lee, Joonmyoung
|
|
2010
|
10 |
1S |
p. e68-e70
nvt p.
|
artikel
|
| 2 |
Barrier engineering in metal–aluminum oxide–nitride–oxide–silicon (MANOS) flash memory: Invited
|
Kang, Chang Yong
|
|
2010
|
10 |
1S |
p. e27-e31
nvt p.
|
artikel
|
| 3 |
Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film
|
Jeong, Hu Young
|
|
2010
|
10 |
1S |
p. e46-e49
nvt p.
|
artikel
|
| 4 |
5-bit/cell Characteristics using mixed program/erase mechanism in recessed channel non-volatile memory cells
|
Han, Kyoung-Rok
|
|
2010
|
10 |
1S |
p. e2-e4
nvt p.
|
artikel
|
| 5 |
Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices
|
Jung, Jae Hun
|
|
2010
|
10 |
1S |
p. e42-e45
nvt p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2010
|
10 |
1S |
p. i-
1 p.
|
artikel
|
| 7 |
Effect of interface chemical properties on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by NiO
|
Seo, Sung-Ho
|
|
2010
|
10 |
1S |
p. e32-e36
nvt p.
|
artikel
|
| 8 |
Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer
|
Oh, Se-Man
|
|
2010
|
10 |
1S |
p. e18-e21
nvt p.
|
artikel
|
| 9 |
Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers
|
Seo, Ki Bong
|
|
2010
|
10 |
1S |
p. e5-e8
nvt p.
|
artikel
|
| 10 |
Enhanced thermal efficiency for amorphization in nano-structured Ge2Sb2Te5–TiO x films
|
Lee, Dongbok
|
|
2010
|
10 |
1S |
p. e83-e86
nvt p.
|
artikel
|
| 11 |
Guest editorial
|
Park, Jea-Gun
|
|
2010
|
10 |
1S |
p. e1-
1 p.
|
artikel
|
| 12 |
High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
|
Yoda, Hiroaki
|
|
2010
|
10 |
1S |
p. e87-e89
nvt p.
|
artikel
|
| 13 |
Nonvolatile memory characteristics of small-molecule memory cells with electron-transport and hole-transport bilayers
|
Nam, Woo-Sik
|
|
2010
|
10 |
1S |
p. e37-e41
nvt p.
|
artikel
|
| 14 |
Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications
|
Bae, Insung
|
|
2010
|
10 |
1S |
p. e54-e57
nvt p.
|
artikel
|
| 15 |
Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier
|
Kang, Hae-yoon
|
|
2010
|
10 |
1S |
p. e22-e26
nvt p.
|
artikel
|
| 16 |
Recent advances in ferroelectric polymer thin films for memory applications
|
Furukawa, T.
|
|
2010
|
10 |
1S |
p. e62-e67
nvt p.
|
artikel
|
| 17 |
Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results
|
Chen, Frederick T.
|
|
2010
|
10 |
1S |
p. e75-e78
nvt p.
|
artikel
|
| 18 |
The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe
|
Park, Young-wook
|
|
2010
|
10 |
1S |
p. e79-e82
nvt p.
|
artikel
|
| 19 |
Thin film embedded memory solutions
|
Mazoyer, Pascale
|
|
2010
|
10 |
1S |
p. e9-e12
nvt p.
|
artikel
|
| 20 |
TiN electrode-induced bipolar resistive switching of TiO2 thin films
|
Do, Young Ho
|
|
2010
|
10 |
1S |
p. e71-e74
nvt p.
|
artikel
|
| 21 |
Top-gate ferroelectric thin-film-transistors with P(VDF-TrFE) copolymer
|
Jung, Soon-Won
|
|
2010
|
10 |
1S |
p. e58-e61
nvt p.
|
artikel
|
| 22 |
Tunneling barrier engineered charge trap flash memory with ONO and NON tunneling dielectric layers
|
Park, Goon-Ho
|
|
2010
|
10 |
1S |
p. e13-e17
nvt p.
|
artikel
|
| 23 |
Understanding the switching mechanism of polymer memory
|
Kwan, Wei Lek
|
|
2010
|
10 |
1S |
p. e50-e53
nvt p.
|
artikel
|
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