| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive electron paramagnetic resonance study of influence of annealing on defect center in phosphorus ion-implanted C60 films
|
Fahim, N.F
|
|
2002
|
5 |
6 |
p. 483-490
8 p.
|
artikel
|
| 2 |
Anomalous CV curves of Al/SRO/Si structure after electrical stress
|
Yu, Z.
|
|
2002
|
5 |
6 |
p. 477-481
5 p.
|
artikel
|
| 3 |
A simple method of mesa fabrication on DBR containing heterostructures
|
Górska, M.
|
|
2002
|
5 |
6 |
p. 505-509
5 p.
|
artikel
|
| 4 |
Author Index
|
|
|
2002
|
5 |
6 |
p. I-III
nvt p.
|
artikel
|
| 5 |
Determination of recombination lifetime in MOS structures by a sine voltage-sweep technique
|
Peykov, P.
|
|
2002
|
5 |
6 |
p. 515-518
4 p.
|
artikel
|
| 6 |
Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing
|
Lee, Sang Hyun
|
|
2002
|
5 |
6 |
p. 519-524
6 p.
|
artikel
|
| 7 |
Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD
|
Qin, Z.X.
|
|
2002
|
5 |
6 |
p. 473-475
3 p.
|
artikel
|
| 8 |
Lattice expansion induced by Zn channeled implantation in GaN
|
Ding, F-R
|
|
2002
|
5 |
6 |
p. 511-514
4 p.
|
artikel
|
| 9 |
Optimization of process conditions for the formation of hemispherical-grained (HSG) silicon in high-density DRAM capacitor
|
Joung, Yang Hee
|
|
2002
|
5 |
6 |
p. 497-503
7 p.
|
artikel
|
| 10 |
Patents alert
|
|
|
2002
|
5 |
6 |
p. 529-530
2 p.
|
artikel
|
| 11 |
Plasma roughening of polished SiC substrates
|
Franz, Gerhard
|
|
2002
|
5 |
6 |
p. 525-527
3 p.
|
artikel
|
| 12 |
Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD
|
Lu, Jianguo
|
|
2002
|
5 |
6 |
p. 491-496
6 p.
|
artikel
|
| 13 |
Subject Index
|
|
|
2002
|
5 |
6 |
p. V-VI
nvt p.
|
artikel
|
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