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                             55 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer Wang, Tian-Hu
 2015
 29 C p. 95-101
7 p.
 artikel
2 AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications Mohd Yusoff, M.Z.
 2015
 29 C p. 231-237
7 p.
 artikel
3 Characteristics and optical properties of MgO nanowires synthesized by solvothermal method Hadia, N.M.A.
 2015
 29 C p. 238-244
7 p.
 artikel
4 CO2 detection with CN x thin films deposited on porous silicon Zouadi, N.
 2015
 29 C p. 367-371
5 p.
 artikel
5 Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different Al x Ga1−x N graded layers Yang, G.F.
 2015
 29 C p. 362-366
5 p.
 artikel
6 Editorial Cheong, Kuan Yew
 2015
 29 C p. 1-
1 p.
 artikel
7 Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors Ding, Xingwei
 2015
 29 C p. 326-330
5 p.
 artikel
8 Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol–gel method Velichko, А.
 2015
 29 C p. 315-320
6 p.
 artikel
9 Effect of thickness on the structural, optical and electrical properties of RF magnetron sputtered GZO thin films Pugalenthi, A.S.
 2015
 29 C p. 176-182
7 p.
 artikel
10 Electrical and optical properties of ZnO/Si heterojunctions as a function of the Mg dopant content Soylu, Murat
 2015
 29 C p. 76-82
7 p.
 artikel
11 Electrochromic properties of amorphous and crystalline WO3 thin films prepared by thermal evaporation technique El-Nahass, M.M.
 2015
 29 C p. 201-205
5 p.
 artikel
12 Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics Hu, Chih-Chun
 2015
 29 C p. 272-276
5 p.
 artikel
13 Exploring the structure as well as electrical and photovoltaic mechanism in PrFe0.5Ni0.5O3/GaAs heterojunction Mir, Feroz. A.
 2015
 29 C p. 206-212
7 p.
 artikel
14 Extant ionic charge theory for bond orbital model based on the tight-binding method: A semi-empirical model applied to wide-bandgap II-VI and III-V semiconductors Verma, A.S.
 2015
 29 C p. 2-15
14 p.
 artikel
15 FeCl 2 -assisted synthesis and photoluminescence of β-SiC nanowires Wang, Feng
 2015
 29 C p. 155-160
6 p.
 artikel
16 First-principle investigation of K–N dual-acceptor codoping for p-ZnO Wu, Jun
 2015
 29 C p. 245-249
5 p.
 artikel
17 First-principles investigations of Mn doped zinc-blende ZnO based magnetic semiconductors: Materials for spintronic applications Ul Haq, Bakhtiar
 2015
 29 C p. 256-261
6 p.
 artikel
18 Green light emitting diode grown on thick strain-reduced GaN template Yang, Jiankun
 2015
 29 C p. 357-361
5 p.
 artikel
19 Green synthesis of iron oxide thin-films grown from recycled iron foils Baca, Roberto
 2015
 29 C p. 294-299
6 p.
 artikel
20 Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy Zhang, Linen
 2015
 29 C p. 351-356
6 p.
 artikel
21 Growth of p-type Cu-doped GaN films with magnetron sputtering at and below 400°C Yohannes, Kidus
 2015
 29 C p. 288-293
6 p.
 artikel
22 IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures Ding, Xingwei
 2015
 29 C p. 69-75
7 p.
 artikel
23 Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time Paskaleva, A.
 2015
 29 C p. 124-131
8 p.
 artikel
24 Improved light extraction efficiency and leakage characteristics in light-emitting diodes by nanorod arrays formed on hexagonal pits Son, Taejoon
 2015
 29 C p. 380-385
6 p.
 artikel
25 Improvement of Ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme Pang, Liang
 2015
 29 C p. 90-94
5 p.
 artikel
26 Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films Lin, Tao
 2015
 29 C p. 150-154
5 p.
 artikel
27 Influence of annealing and processing conditions on nano-structured thin films of tungsten trioxide Touihri, S.
 2015
 29 C p. 223-230
8 p.
 artikel
28 Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method Feng, Q.J.
 2015
 29 C p. 188-192
5 p.
 artikel
29 Influence of the nitrogen fraction on AlN thin film deposited by cathodic arc ion Khan, Shakil
 2015
 29 C p. 193-200
8 p.
 artikel
30 Integration of SiC-1D nanostructures into nano-field effect transistors Ollivier, M.
 2015
 29 C p. 218-222
5 p.
 artikel
31 Leakage current characteristics of metal (Ag,TiN,W)-Hf:Ta2O5/SiO x N y –Si structures Novkovski, N.
 2015
 29 C p. 345-350
6 p.
 artikel
32 Measure the barrier height of manganite p–n heterojunction by activation energy measurement Wang, Mei
 2015
 29 C p. 213-217
5 p.
 artikel
33 Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane Latha, H.K.E.
 2015
 29 C p. 117-123
7 p.
 artikel
34 Nanostructured thin films based on TiO2 and/or SiC for use in photoelectrochemical cells: A review of the material characteristics, synthesis and recent applications Pessoa, R.S.
 2015
 29 C p. 56-68
13 p.
 artikel
35 Novel coral-like hexagonal MoO3 thin films: Synthesis and photochromic properties Shen, Yi
 2015
 29 C p. 250-255
6 p.
 artikel
36 Novel InGaN mesoporous grown by PA-MBE Ramizy, Asmiet
 2015
 29 C p. 102-105
4 p.
 artikel
37 Performance of the Au/MgO/Ni photovoltaic devices Khanfar, H.K.
 2015
 29 C p. 183-187
5 p.
 artikel
38 Physical characterization of the semiconducting deficient perovskite BaSnO3−δ Hadjarab, B.
 2015
 29 C p. 283-287
5 p.
 artikel
39 Porous In2O3 microstructures: Hydrothermal synthesis and enhanced Cl2 sensing performance Li, Pei
 2015
 29 C p. 83-89
7 p.
 artikel
40 Preparation and electrochemical capacitance of MnO2 thin films doped by CuBi2O4 Aref, A.A.
 2015
 29 C p. 262-271
10 p.
 artikel
41 Rapid thermal annealing effects on the optical properties of GaAs0.9−x N x Sb0.1 structures grown by MBE Ben Sedrine, N.
 2015
 29 C p. 331-336
6 p.
 artikel
42 Recent advances in ultraviolet photodetectors Alaie, Z.
 2015
 29 C p. 16-55
40 p.
 artikel
43 Solid-state synthesis of modified (Bi0.5Na0.5)TiO3 piezoelectric nanocrystalline ceramics and evaluating their properties Pourianejad, S.
 2015
 29 C p. 337-344
8 p.
 artikel
44 Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors Wu, Jie
 2015
 29 C p. 277-282
6 p.
 artikel
45 Structural and optoelectronic properties of nanostructured TiO2 thin films with annealing Khan, Abdul Faheem
 2015
 29 C p. 161-169
9 p.
 artikel
46 Structural, dielectric relaxation and electrical conductivity behavior in MgO powders synthesized by sol–gel Mbarki, R.
 2015
 29 C p. 300-306
7 p.
 artikel
47 Structural, optical and dielectric properties of HfSiO films prepared by co-evaporation method Yang, Chen
 2015
 29 C p. 321-325
5 p.
 artikel
48 Structure, luminescence and photocatalytic activity of Mg-doped ZnO nanoparticles prepared by auto combustion method Wang, Yajun
 2015
 29 C p. 372-379
8 p.
 artikel
49 Synthesis and gas sensing behavior of nanostructured V2O5 thin films prepared by spray pyrolysis Abbasi, M.
 2015
 29 C p. 132-138
7 p.
 artikel
50 Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure Saghrouni, H.
 2015
 29 C p. 307-314
8 p.
 artikel
51 The effect of temperature on the growth and properties of green light-emitting In0.5Ga0.5N films prepared by reactive sputtering with single cermet target Li, Cheng-Che
 2015
 29 C p. 170-175
6 p.
 artikel
52 The excellent spontaneous ultraviolet emission of GaN nanostructures grown on silicon substrates by thermal vapor deposition Saron, K.M.A.
 2015
 29 C p. 106-111
6 p.
 artikel
53 The formation of a dielectric SiN x C y sealing layer using an atomic layer deposition technique Kim, Doyoung
 2015
 29 C p. 139-142
4 p.
 artikel
54 The temperature dependence on the electrical properties of dysprosium oxide deposited on p-Si substrate Cherif, A.
 2015
 29 C p. 143-149
7 p.
 artikel
55 V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate Wang, Huanyou
 2015
 29 C p. 112-116
5 p.
 artikel
                             55 gevonden resultaten
 
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