nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advances in positron annihilation spectroscopy of Si, Ge and their alloys
|
Slotte, Jonatan |
|
2012 |
15 |
6 |
p. 669-674 6 p. |
artikel |
2 |
Challenges and opportunities in advanced Ge pMOSFETs
|
Simoen, E. |
|
2012 |
15 |
6 |
p. 588-600 13 p. |
artikel |
3 |
Defects annealing in 4H–SiC epitaxial layer probed by low temperature photoluminescence
|
Litrico, G. |
|
2012 |
15 |
6 |
p. 740-743 4 p. |
artikel |
4 |
Direct observation of local atomic structure in arsenic implanted silicon
|
Yamazaki, H. |
|
2012 |
15 |
6 |
p. 707-712 6 p. |
artikel |
5 |
Dopant-defect interactions in Ge: Density functional theory calculations
|
Chroneos, A. |
|
2012 |
15 |
6 |
p. 691-696 6 p. |
artikel |
6 |
Editorial
|
Bracht, Hartmut |
|
2012 |
15 |
6 |
p. 587- 1 p. |
artikel |
7 |
Magnetism in melt grown dilute magnetic semiconductor Ge1−x Mn x from electron density
|
Sheeba, R.A.J.R. |
|
2012 |
15 |
6 |
p. 731-739 9 p. |
artikel |
8 |
On the diffusion and activation of n-type dopants in Ge
|
Vanhellemont, Jan |
|
2012 |
15 |
6 |
p. 642-655 14 p. |
artikel |
9 |
Overview and status of bottom-up silicon nanowire electronics
|
Fasoli, A. |
|
2012 |
15 |
6 |
p. 601-614 14 p. |
artikel |
10 |
Point defect diffusion in Si and SiGe revisited through atomistic simulations
|
Pochet, Pascal |
|
2012 |
15 |
6 |
p. 675-690 16 p. |
artikel |
11 |
Polysilicon thin-film transistors on polymer substrates
|
Fortunato, Guglielmo |
|
2012 |
15 |
6 |
p. 627-641 15 p. |
artikel |
12 |
p-type conduction in ion-implanted amorphized Ge
|
Romano, L. |
|
2012 |
15 |
6 |
p. 703-706 4 p. |
artikel |
13 |
Role of point defects on B diffusion in Ge
|
Scapellato, G.G. |
|
2012 |
15 |
6 |
p. 656-668 13 p. |
artikel |
14 |
Si and Ge nanocrystals for future memory devices
|
Bonafos, C. |
|
2012 |
15 |
6 |
p. 615-626 12 p. |
artikel |
15 |
Solidification behavior of highly supercooled polycrystalline silicon droplets
|
Roy, Sudesna |
|
2012 |
15 |
6 |
p. 722-730 9 p. |
artikel |
16 |
The diffusivity of the vacancy in silicon: Is it fast or slow?
|
Voronkov, V.V. |
|
2012 |
15 |
6 |
p. 697-702 6 p. |
artikel |
17 |
Thin films of silica imbedded silicon and germanium quantum dots by solution processing
|
Oliva, Brittany L. |
|
2012 |
15 |
6 |
p. 713-721 9 p. |
artikel |