| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Advances in positron annihilation spectroscopy of Si, Ge and their alloys
|
Slotte, Jonatan
|
|
2012
|
15 |
6 |
p. 669-674
6 p.
|
article
|
| 2 |
Challenges and opportunities in advanced Ge pMOSFETs
|
Simoen, E.
|
|
2012
|
15 |
6 |
p. 588-600
13 p.
|
article
|
| 3 |
Defects annealing in 4H–SiC epitaxial layer probed by low temperature photoluminescence
|
Litrico, G.
|
|
2012
|
15 |
6 |
p. 740-743
4 p.
|
article
|
| 4 |
Direct observation of local atomic structure in arsenic implanted silicon
|
Yamazaki, H.
|
|
2012
|
15 |
6 |
p. 707-712
6 p.
|
article
|
| 5 |
Dopant-defect interactions in Ge: Density functional theory calculations
|
Chroneos, A.
|
|
2012
|
15 |
6 |
p. 691-696
6 p.
|
article
|
| 6 |
Editorial
|
Bracht, Hartmut
|
|
2012
|
15 |
6 |
p. 587-
1 p.
|
article
|
| 7 |
Magnetism in melt grown dilute magnetic semiconductor Ge1−x Mn x from electron density
|
Sheeba, R.A.J.R.
|
|
2012
|
15 |
6 |
p. 731-739
9 p.
|
article
|
| 8 |
On the diffusion and activation of n-type dopants in Ge
|
Vanhellemont, Jan
|
|
2012
|
15 |
6 |
p. 642-655
14 p.
|
article
|
| 9 |
Overview and status of bottom-up silicon nanowire electronics
|
Fasoli, A.
|
|
2012
|
15 |
6 |
p. 601-614
14 p.
|
article
|
| 10 |
Point defect diffusion in Si and SiGe revisited through atomistic simulations
|
Pochet, Pascal
|
|
2012
|
15 |
6 |
p. 675-690
16 p.
|
article
|
| 11 |
Polysilicon thin-film transistors on polymer substrates
|
Fortunato, Guglielmo
|
|
2012
|
15 |
6 |
p. 627-641
15 p.
|
article
|
| 12 |
p-type conduction in ion-implanted amorphized Ge
|
Romano, L.
|
|
2012
|
15 |
6 |
p. 703-706
4 p.
|
article
|
| 13 |
Role of point defects on B diffusion in Ge
|
Scapellato, G.G.
|
|
2012
|
15 |
6 |
p. 656-668
13 p.
|
article
|
| 14 |
Si and Ge nanocrystals for future memory devices
|
Bonafos, C.
|
|
2012
|
15 |
6 |
p. 615-626
12 p.
|
article
|
| 15 |
Solidification behavior of highly supercooled polycrystalline silicon droplets
|
Roy, Sudesna
|
|
2012
|
15 |
6 |
p. 722-730
9 p.
|
article
|
| 16 |
The diffusivity of the vacancy in silicon: Is it fast or slow?
|
Voronkov, V.V.
|
|
2012
|
15 |
6 |
p. 697-702
6 p.
|
article
|
| 17 |
Thin films of silica imbedded silicon and germanium quantum dots by solution processing
|
Oliva, Brittany L.
|
|
2012
|
15 |
6 |
p. 713-721
9 p.
|
article
|
Journal description