| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characterisation of droplet-epitaxial GaAs/AlGaAs quantum dot and quantum ring systems using grazing incidence X-ray diffraction
|
Zolotaryov, A.
|
|
2009
|
12 |
1-2 |
p. 75-81
7 p.
|
artikel
|
| 2 |
Combined electrochemical atomic layer epitaxy and microcontact printing techniques
|
Carlà, F.
|
|
2009
|
12 |
1-2 |
p. 21-24
4 p.
|
artikel
|
| 3 |
Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (311)B substrates
|
Selçuk, E.
|
|
2009
|
12 |
1-2 |
p. 40-43
4 p.
|
artikel
|
| 4 |
Dynamic behavior of charge in MOS devices embedded with Pt and Au nanoparticles
|
Sargentis, Ch.
|
|
2009
|
12 |
1-2 |
p. 57-63
7 p.
|
artikel
|
| 5 |
Epitaxial aluminium nitride on patterned silicon
|
Moreno, J.C.
|
|
2009
|
12 |
1-2 |
p. 31-33
3 p.
|
artikel
|
| 6 |
Growth of nanostructures by locally modified surface reactivity
|
Portavoce, A.
|
|
2009
|
12 |
1-2 |
p. 25-30
6 p.
|
artikel
|
| 7 |
Growth study of silicon nanowires by electron microscopies
|
Reguer, Alan
|
|
2009
|
12 |
1-2 |
p. 44-51
8 p.
|
artikel
|
| 8 |
High-resolution X-ray diffraction as a tool to investigate the evolution of local stress in sub-micrometric Si lines isolated by periodic arrays of oxide-filled trenches
|
Escoubas, S.
|
|
2009
|
12 |
1-2 |
p. 64-70
7 p.
|
artikel
|
| 9 |
Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing
|
Ilahi, B.
|
|
2009
|
12 |
1-2 |
p. 71-74
4 p.
|
artikel
|
| 10 |
Is it possible to use external stress to tune silicon surface morphology?
|
Karashanova, D.
|
|
2009
|
12 |
1-2 |
p. 12-15
4 p.
|
artikel
|
| 11 |
[No title]
|
Berbezier, Isabelle
|
|
2009
|
12 |
1-2 |
p. 1-
1 p.
|
artikel
|
| 12 |
Pyramid-like nanostructures created by Si homoepitaxy on Si(001)
|
Galiana, N.
|
|
2009
|
12 |
1-2 |
p. 52-56
5 p.
|
artikel
|
| 13 |
Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
|
Cordier, Y.
|
|
2009
|
12 |
1-2 |
p. 16-20
5 p.
|
artikel
|
| 14 |
Selective growth of tensily strained Si1− y C y films on patterned Si substrates
|
Gouyé, A.
|
|
2009
|
12 |
1-2 |
p. 34-39
6 p.
|
artikel
|
| 15 |
Self-organizational tendencies of heteroepitaxial transition-metal silicide nanoislands
|
Goldfarb, I.
|
|
2009
|
12 |
1-2 |
p. 6-11
6 p.
|
artikel
|
| 16 |
Stochastic continuum model of submonolayer epitaxial growth
|
Raymond, Laurent
|
|
2009
|
12 |
1-2 |
p. 2-5
4 p.
|
artikel
|
| 17 |
Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique
|
Bouloufa, A.
|
|
2009
|
12 |
1-2 |
p. 82-87
6 p.
|
artikel
|
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